Patent classifications
C30B25/005
THERMAL STABLE, ONE-DIMENSIONAL HEXAGONAL-PHASE VANADIUM SULFIDE NANOWIRES AND METHODS FOR PREPARING THE SAME
The present invention provides a general salt-assisted chemical vapor deposition (SA-CVD) synthetic method for the high-yield preparation of 1D hexagonal-phase M.sub.xV.sub.6S.sub.8(M=K, Rb, Cs) and K.sub.xV.sub.6S.sub.ySe.sub.8-y nanowires. The resulting nanowires exhibit typical metallic properties, which can be used as a good van der Waals contact for achieving high-performance fermi level pinning free transistors. The present synthesis method allows a more systematic investigation of the intrinsic properties of hexagonal-phase V.sub.6S.sub.8 structures.
CATALYST FOR MANUFACTURING CARBON NANOTUBES AND METHOD OF MANUFACTURING CARBON NANOTUBES
One embodiment of the present disclosure provides a method of preparing a catalyst for manufacturing carbon nanotubes, which includes: (a) dissolving a metal precursor in a solvent to prepare a precursor solution; (b) thermally decomposing the precursor solution by spraying the precursor solution into a reactor; and (c) obtaining a catalyst, wherein the catalyst includes a metal component represented by the following Chemical Formula 1:
Co.sub.x:[M1,Zr].sub.y: M2.sub.z[Chemical Formula 1] wherein Co represents cobalt or oxides or derivatives thereof, M1 represents at least one metal, or oxides or derivatives thereof, selected from Al, Ca, Si, Ti, and Mg, Zr represents zirconium, or oxides or derivatives thereof, M2 represents at least one metal, or oxides or derivatives thereof, selected from W, V, Mn, and Mo, x/y satisfies 0.2x/y2.6, and x/z satisfies 6x/z13.
Nanostructured battery active materials and methods of producing same
Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.
AlN crystal preparation method, AlN crystals, and organic compound including AlN crystals
A method for producing AlN crystals includes using at least one element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N or a condition under which the element forms a compound with any of Al and N provided that the standard free energy of formation of the compound is larger than that of AlN; melting a composition containing at least Al and the element; and reacting the Al vapor with nitrogen gas at a predetermined reaction temperature to produce AlN crystals.
Nanostructured battery active materials and methods of producing same
Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.
Nanowires network
The present invention refers to a method for preparing a network of nanowires; to a network of nanowires obtainable by said method; to a nonwoven material comprising the network, to an electrode comprising the network, a pharmaceutical composition 10 comprising the network of nanowires, to the use of the network of nanowires and to the use of the nonwoven material.
CARBON-COATED NANOWIRE NETWORK ELECTRODES
The present invention refers to a method for preparing an electrode; to the electrode obtainable by said method; to a cell comprising the electrode, and to the use of the electrode.
Thermal stable, one-dimensional hexagonal-phase vanadium sulfide nanowires and methods for preparing the same
The present invention provides a general salt-assisted chemical vapor deposition (SA-CVD) synthetic method for the high-yield preparation of 1D hexagonal-phase M.sub.xV.sub.6S.sub.8(M=K, Rb, Cs) and K.sub.xV.sub.6S.sub.ySe.sub.8-y nanowires. The resulting nanowires exhibit typical metallic properties, which can be used as a good van der Waals contact for achieving high-performance fermi level pinning free transistors. The present synthesis method allows a more systematic investigation of the intrinsic properties of hexagonal-phase V.sub.6S.sub.8 structures.