A system for labeling an object uses at least one object label made from a material that absorbs and reflects incident energy uniformly across all wavelengths of incident energy at a ratio proportional to a thickness of the material and that includes a pattern having variations in the thickness of the material along at least one of two orthogonal directions across the label. An interrogator directs a predetermined wavelength of radiation to the at least one label, and a reader to receives reflected radiation from the label at the predetermined wavelength and interprets the reflected radiation to recognize the pattern.

A system for labeling an object uses at least one object label made from a material that absorbs and reflects incident energy uniformly across all wavelengths of incident energy at a ratio proportional to a thickness of the material and that includes a pattern having variations in the thickness of the material along at least one of two orthogonal directions across the label. An interrogator directs a predetermined wavelength of radiation to the at least one label, and a reader to receives reflected radiation from the label at the predetermined wavelength and interprets the reflected radiation to recognize the pattern.

A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.

A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.

A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SiC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.

A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SiC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.

A novel metal oxide is provided. The metal oxide includes a crystal. The crystal has a structure in which a first layer, a second layer, and a third layer are stacked. The first layer, the second layer, and the third layer are each substantially parallel to a formation surface of the metal oxide. The first layer includes a first metal and oxygen. The second layer includes a second metal and oxygen. The third layer includes a third metal and oxygen. The first layer has an octahedral structure. The second layer has a trigonal bipyramidal structure or a tetrahedral structure. The third layer has a trigonal bipyramidal structure or a tetrahedral structure. The octahedral structure of the first layer includes an atom of the first metal at a center. The trigonal bipyramidal structure or the tetrahedral structure of the second layer includes an atom of the second metal at a center. The trigonal bipyramidal structure or the tetrahedral structure of the third layer includes an atom of the third metal at a center. The valence of the first metal is equal to the valence of the second metal. The valence of the first metal is different from the valence of the third metal.

As one embodiment, the present invention provides a method for growing a β-Ga.sub.2O.sub.3-based single crystal film by using HYPE method. The method includes a step of exposing a Ga.sub.2O.sub.3-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a β-Ga.sub.2O.sub.3-based single crystal film on a principal surface of the Ga.sub.2O.sub.3-based substrate at a growth temperature of not lower than 900° C.

As one embodiment, the present invention provides a method for growing a β-Ga.sub.2O.sub.3-based single crystal film by using HYPE method. The method includes a step of exposing a Ga.sub.2O.sub.3-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a β-Ga.sub.2O.sub.3-based single crystal film on a principal surface of the Ga.sub.2O.sub.3-based substrate at a growth temperature of not lower than 900° C.

A single crystal diamond material comprising: neutral nitrogen-vacancy defects (NV.sup.0); negatively charged nitrogen-vacancy defects (NV.sup.−); and single substitutional nitrogen defects (N.sub.s) which transfer their charge to the neutral nitrogen-vacancy defects (NV.sup.0) to convert them into the negatively charged nitrogen-vacancy defects (NV), characterized in that the single crystal diamond material has a magnetometry figure of merit (FOM) of at least 2, wherein the magnetometry figure of merit is defined by (I) where R is a ratio of concentrations of negatively charged nitrogen-vacancy defects to neutral nitrogen-vacancy defects ([NV.sup.−]/[NV.sup.0]), [NV.sup.−] is the concentration of negatively charged nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, [NV0] is a concentration of neutral nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, and T.sub.2′ is a decoherence time of the NV.sup.− defects, where T.sub.2′ is T.sub.2* for DC magnetometry or T.sub.2 for AC magnetometry.