Proposed are a layered Group III-V arsenic compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] Mx-mAyAsz (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

Proposed are a layered Group III-V compound containing phosphorus, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound represented by [Formula 1] M.sub.x-mA.sub.yP.sub.z (Where M is at least one of Group II elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

Proposed are a layered Group III-V compound containing phosphorus, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound represented by [Formula 1] M.sub.x-mA.sub.yP.sub.z (Where M is at least one of Group II elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

Embodiments disclosed herein are related to polycrystalline textured materials exhibiting heterogeneous templated grain growth, methods of forming such materials, and related systems. An example of a method of forming a polycrystalline textured material exhibiting heterogeneous templated grain growth includes providing a plurality of seeds. The method also includes aligning at least some of the plurality of seeds (e.g., single-crystal seeds) so that a selected crystallographic orientation of at least some of the plurality of seeds are substantially aligned with each other. Additionally, the method includes positioning the plurality of seeds in a powder matrix. The method then includes pressing the plurality of seeds and the powdered matrix to form a green body. Further, the method includes sintering the green body at a temperature that is sufficient to grow a plurality of grains from corresponding ones of the plurality of seeds to form the polycrystalline textured material.

Embodiments disclosed herein are related to polycrystalline textured materials exhibiting heterogeneous templated grain growth, methods of forming such materials, and related systems. An example of a method of forming a polycrystalline textured material exhibiting heterogeneous templated grain growth includes providing a plurality of seeds. The method also includes aligning at least some of the plurality of seeds (e.g., single-crystal seeds) so that a selected crystallographic orientation of at least some of the plurality of seeds are substantially aligned with each other. Additionally, the method includes positioning the plurality of seeds in a powder matrix. The method then includes pressing the plurality of seeds and the powdered matrix to form a green body. Further, the method includes sintering the green body at a temperature that is sufficient to grow a plurality of grains from corresponding ones of the plurality of seeds to form the polycrystalline textured material.

Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag.sub.2-δX.sub.δS.sub.1-ηY.sub.η(I), in which 0≤δ<0.5, 0≤η<0.5, X is at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, or V, and Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, or F. The material can withstand certain deformations, similar to organic materials, and has excellent semiconductor properties with adjustable electrical properties, thereby enabling the preparation of high-performance flexible semiconductor devices.

Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag.sub.2-δX.sub.δS.sub.1-ηY.sub.η(I), in which 0≤δ<0.5, 0≤η<0.5, X is at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, or V, and Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, or F. The material can withstand certain deformations, similar to organic materials, and has excellent semiconductor properties with adjustable electrical properties, thereby enabling the preparation of high-performance flexible semiconductor devices.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

A cathode includes a cathode collector layer, and a cathode active material layer on a surface of the cathode collector layer. The cathode active material layer includes a sintered polycrystalline material having a plurality of crystal grains of a lithium-based oxide, and each of the plurality of crystal grains includes a seed template, and a matrix crystal around the seed template, where the seed template is a single crystal and having a shape of a plate.