Provided is a SiC polycrystal manufacturing method based on a sublimation recrystallization method using a SiC seed crystal. In the method, a polycrystalline SiC substrate that is a SiC polycrystal produced by a sublimation recrystallization method and contains a greater amount of -SiC than -SiC is used as the SiC seed crystal.

Provided is a SiC polycrystal manufacturing method based on a sublimation recrystallization method using a SiC seed crystal. In the method, a polycrystalline SiC substrate that is a SiC polycrystal produced by a sublimation recrystallization method and contains a greater amount of -SiC than -SiC is used as the SiC seed crystal.

Embodiments of the present disclosure generally relate to optical devices. More specifically, embodiments described herein relate to an optical device layer stack, an optical device formed from the optical device layer stack, and a method of forming an optical device layer stack.

Embodiments of the present disclosure generally relate to optical devices. More specifically, embodiments described herein relate to an optical device layer stack, an optical device formed from the optical device layer stack, and a method of forming an optical device layer stack.