Methods of forming a near field transducer (NFT), the methods including the steps of depositing plasmonic material on a substrate; laser annealing at least a portion of the deposited plasmonic material at a wavelength from 100 nm to 2.0 micrometers (μm) to induce liquid phase epitaxy (LPE) in the annealed deposited plasmonic material to form a epitaxially modified plasmonic material; and forming a NFT from at least a portion of the epitaxially modified plasmonic material are disclosed as well as other methods and devices such as those formed.

Methods of forming a near field transducer (NFT), the methods including the steps of depositing plasmonic material on a substrate; laser annealing at least a portion of the deposited plasmonic material at a wavelength from 100 nm to 2.0 micrometers (μm) to induce liquid phase epitaxy (LPE) in the annealed deposited plasmonic material to form a epitaxially modified plasmonic material; and forming a NFT from at least a portion of the epitaxially modified plasmonic material are disclosed as well as other methods and devices such as those formed.

A method of site-selective growth of a nanocrystal from an anisotropic seed can include immersing an anisotropic seed functionalized with a ligand in a growth solution having a nanocrystal precursor, a complexing agent, and a reducing agent to form a growth solution, wherein an amount of the reducing agent and/or any amount of the complexing agent is selected to define a supersaturation of the growth solution that is sufficient for overcoming an energy barrier of one or more selected regions of the functionalized seed to selectively growth the nanocrystal at the one or more selected regions.

A method of site-selective growth of a nanocrystal from an anisotropic seed can include immersing an anisotropic seed functionalized with a ligand in a growth solution having a nanocrystal precursor, a complexing agent, and a reducing agent to form a growth solution, wherein an amount of the reducing agent and/or any amount of the complexing agent is selected to define a supersaturation of the growth solution that is sufficient for overcoming an energy barrier of one or more selected regions of the functionalized seed to selectively growth the nanocrystal at the one or more selected regions.

Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

A method for forming a crystalline metal layer on a three-dimensional (3D) substrate is provided. The method includes applying crystal growth ink to a surface of the 3D substrate, wherein the crystal growth ink includes a metal ionic precursor and a structuring liquid; and exposing the 3D substrate to plasma irradiation from plasma in a vacuum chamber to cause the growing of a crystalline metal layer on the 3D substrate, wherein the exposure is based on a set of predefined exposure parameters.

In various examples, an anode, which may be for a metal ion-conducting electrochemical device, comprises a metal member; and a metal conducting coating, which may be an epitaxial (e.g., a homoepitaxial) metal conducing coating, disposed on at least a portion of the metal member (e.g., all portions of the metal member that would be or are in contact with the electrolyte of the metal ion-conducting electrochemical device). A metal conducting coating or an anode may be formed by electrodeposition in the presence of a field.

In various examples, an anode, which may be for a metal ion-conducting electrochemical device, comprises a metal member; and a metal conducting coating, which may be an epitaxial (e.g., a homoepitaxial) metal conducing coating, disposed on at least a portion of the metal member (e.g., all portions of the metal member that would be or are in contact with the electrolyte of the metal ion-conducting electrochemical device). A metal conducting coating or an anode may be formed by electrodeposition in the presence of a field.

Nanostructures formed of metal nanostrands, and methods of forming the nanostrands, are described. These nanostructures can be used as a flexible or non-flexible, transparent or non-transparent conductive films or electronic circuit for various different applications. An example metal nanostrand can include: a first nanoplate joined laterally to a second nanoplate. Each of the nanoplates can have a top surface, a bottom surface and one or more side surfaces laterally extending from the top surface to the bottom surface. A (111) crystallographic plane can be arranged at each of the top surface and the bottom surface.

Nanostructures formed of metal nanostrands, and methods of forming the nanostrands, are described. These nanostructures can be used as a flexible or non-flexible, transparent or non-transparent conductive films or electronic circuit for various different applications. An example metal nanostrand can include: a first nanoplate joined laterally to a second nanoplate. Each of the nanoplates can have a top surface, a bottom surface and one or more side surfaces laterally extending from the top surface to the bottom surface. A (111) crystallographic plane can be arranged at each of the top surface and the bottom surface.