A method includes forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a sacrificial wafer. An anchor layer is formed on the single-crystal-like metal layer. The single-crystal-like metal layer is separated from the sacrificial wafer via the anchor layer. The single-crystal-like metal layer is transported via the anchor layer to a target substrate having one or more recording head subassemblies. The single-crystal-like metal layer is joined with the recording head, the single-crystal-like metal layer being integrated with the recording head as a near-field transducer.

Provided are a semiconductor material based on metal nanowires and a porous nitride, and a preparation method thereof. The semiconductor material includes: a substrate; a buffer layer formed on the substrate; and a composite material layer formed on the buffer layer the composite material layer includes: a transverse porous nitride template layer; and a plurality of metal nanowires filled in pores of the transverse porous nitride template layer.

In a method, a charged metal dot is deposited on a first position of a surface of a semiconductor substrate. Then, a charged region is formed on a second position of the surface of the semiconductor substrate, thereby establishing of which an electric field direction from the first position toward the second position. The first position is spaced apart from the second position by a distance. Thereafter, a precursor gas flows along the electric field direction on the semiconductor substrate, thereby forming a carbon nanotube (CNT) on the semiconductor substrate.

In a method, a charged metal dot is deposited on a first position of a surface of a semiconductor substrate. Then, a charged region is formed on a second position of the surface of the semiconductor substrate, thereby establishing of which an electric field direction from the first position toward the second position. The first position is spaced apart from the second position by a distance. Thereafter, a precursor gas flows along the electric field direction on the semiconductor substrate, thereby forming a carbon nanotube (CNT) on the semiconductor substrate.

Nanoparticles, nanoparticle conjugates, devices for making nanoparticles and nanoparticle conjugates, and related methods of use and synthesis are described.

Multi-layer materials and related systems and methods are generally described.

Multi-layer materials and related systems and methods are generally described.

A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.

A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.

A method for manufacturing monocrystalline graphene, includes supplying an aromatic carbon gas onto a single-crystalline metal catalyst to manufacture the monocrystalline graphene.