A method of manufacturing a copper thin film using a single-crystal copper target, and more particularly, a method of manufacturing a copper thin film using a single-crystal copper target, wherein a copper thin film is deposited on a sapphire disk substrate through high-frequency sputtering using a single-crystal copper target grown through a Czochralski process, and may thus exhibit high quality in terms of crystallinity. The method includes depositing a copper thin film on a sapphire disk substrate through a high-frequency sputtering process using a disk-shaped single-crystal copper target obtained by cutting cylindrical single-crystal copper grown through a Czochralski process.

A method of manufacturing a copper thin film using a single-crystal copper target, and more particularly, a method of manufacturing a copper thin film using a single-crystal copper target, wherein a copper thin film is deposited on a sapphire disk substrate through high-frequency sputtering using a single-crystal copper target grown through a Czochralski process, and may thus exhibit high quality in terms of crystallinity. The method includes depositing a copper thin film on a sapphire disk substrate through a high-frequency sputtering process using a disk-shaped single-crystal copper target obtained by cutting cylindrical single-crystal copper grown through a Czochralski process.

A method for manufacturing monocrystalline graphene, includes supplying an aromatic carbon gas onto a single-crystalline metal catalyst to manufacture the monocrystalline graphene.

A method for manufacturing monocrystalline graphene, includes supplying an aromatic carbon gas onto a single-crystalline metal catalyst to manufacture the monocrystalline graphene.

There is provided a formulation containing nanometric single-crystal metallic copper particles, and a method of producing the formulation.

There is provided a formulation containing nanometric single-crystal metallic copper particles, and a method of producing the formulation.

In some embodiments, the present disclosure pertains to methods of forming single-crystal graphenes by: (1) cleaning a surface of a catalyst; (2) annealing the surface of the catalyst; (3) applying a carbon source to the surface of the catalyst; and (4) growing single-crystal graphene on the surface of the catalyst from the carbon source. Further embodiments of the present disclosure also include a step of separating the formed single-crystal graphene from the surface of the catalyst. In some embodiments, the methods of the present disclosure also include a step of transferring the formed single-crystal graphene to a substrate. Additional embodiments of the present disclosure also include a step of growing stacks of single crystals of graphene.

In some embodiments, the present disclosure pertains to methods of forming single-crystal graphenes by: (1) cleaning a surface of a catalyst; (2) annealing the surface of the catalyst; (3) applying a carbon source to the surface of the catalyst; and (4) growing single-crystal graphene on the surface of the catalyst from the carbon source. Further embodiments of the present disclosure also include a step of separating the formed single-crystal graphene from the surface of the catalyst. In some embodiments, the methods of the present disclosure also include a step of transferring the formed single-crystal graphene to a substrate. Additional embodiments of the present disclosure also include a step of growing stacks of single crystals of graphene.

Method for transferring a useful layer onto a supporting substrate, comprising the successive steps: a) providing a donor substrate made of crystalline diamond; b) implanting gaseous species, through the first surface of the donor substrate, according to a given implantation dose and implantation temperature suitable for forming a graphitic flat zone; c) assembling the donor substrate to the supporting substrate by direct adhesion; d) applying thermal annealing according to a thermal budget suitable for fracturing the donor substrate along the graphitic flat zone; the annealing temperature being greater than or equal to 800° C.; the implantation temperature is: above a minimum temperature beyond which bubbling of the implanted gaseous species occurs on the first surface when the donor substrate is submitted, in the absence of a stiffening effect, to thermal annealing according to said thermal budget, below a maximum temperature beyond which the given implantation dose no longer allows formation of the graphitic flat zone.

Method for transferring a useful layer onto a supporting substrate, comprising the successive steps: a) providing a donor substrate made of crystalline diamond; b) implanting gaseous species, through the first surface of the donor substrate, according to a given implantation dose and implantation temperature suitable for forming a graphitic flat zone; c) assembling the donor substrate to the supporting substrate by direct adhesion; d) applying thermal annealing according to a thermal budget suitable for fracturing the donor substrate along the graphitic flat zone; the annealing temperature being greater than or equal to 800° C.; the implantation temperature is: above a minimum temperature beyond which bubbling of the implanted gaseous species occurs on the first surface when the donor substrate is submitted, in the absence of a stiffening effect, to thermal annealing according to said thermal budget, below a maximum temperature beyond which the given implantation dose no longer allows formation of the graphitic flat zone.