A laser system includes a nonlinear optical (NLO) crystal, wherein the NLO crystal is annealed within a selected temperature range. The NLO crystal is passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level. The system further includes at least one light source, wherein at least one light source is configured to generate light of a selected wavelength and at least one light source is configured to transmit light through the NLO crystal. The system further includes a crystal housing unit configured to house the NLO crystal.

A method manufactures a diamond heterostructure and separates diamond wafers from the heterostructure. The method provides a single-crystal substrate. A first single-crystal sacrificial layer is epitaxially formed on the base. The first sacrificial layer includes niobium nitrate and/or titanium nitride. A first single-crystal diamond layer is epitaxially formed on the first sacrificial layer. A second single-crystal sacrificial layer is epitaxially formed on the first diamond layer. The second sacrificial layer includes niobium nitrate and/or titanium nitride. A second single-crystal diamond layer is epitaxially formed on the second sacrificial layer.

A method manufactures a diamond heterostructure and separates diamond wafers from the heterostructure. The method provides a single-crystal substrate. A first single-crystal sacrificial layer is epitaxially formed on the base. The first sacrificial layer includes niobium nitrate and/or titanium nitride. A first single-crystal diamond layer is epitaxially formed on the first sacrificial layer. A second single-crystal sacrificial layer is epitaxially formed on the first diamond layer. The second sacrificial layer includes niobium nitrate and/or titanium nitride. A second single-crystal diamond layer is epitaxially formed on the second sacrificial layer.

Disclosed herein is a single nonlinear optical crystal having a chemical formula of MgIVV2, wherein IV is selected from Si, Ge, or Sn, and V is selected from P or As, wherein the single nonlinear optical crystal has a chalcopyrite and non-centrosymmetric crystal structure, with a space group of, wherein the non-centrosymmetric crystal structure is defined by unit cell parameters: a between about 5.5 to about 6 , c between about 9.5 to about 12.5 , and a unit cell volume of about 287 to about 450 .sup.3, wherein the single nonlinear optical crystal exhibits a refractive index of about 2.770 to about 2.780 and from about 2.800 to about 2.810 for no and ne respectively at a wavelength of 1,550 nm, and a nonlinear coefficient of d.sub.eff of SHG from about 80 to about 95 pm/V, wherein the single crystal MgIVV.sub.2 is substantially free of impurities.

The invention relates to a method for manufacturing a cobalt silicide CoSi.sub.2 layer including the steps of: Providing a substrate comprising a silicon layer; Depositing a cobalt Co layer onto the substrate; Annealing the stack by a nanosecond laser comprising at least one laser pulse with a duration between 50 nanoseconds and 20 microseconds and an energy density selected so as to form the cobalt silicide CoSi.sub.2 layer in the solid state.

The invention relates to a method for manufacturing a cobalt silicide CoSi.sub.2 layer including the steps of: Providing a substrate comprising a silicon layer; Depositing a cobalt Co layer onto the substrate; Annealing the stack by a nanosecond laser comprising at least one laser pulse with a duration between 50 nanoseconds and 20 microseconds and an energy density selected so as to form the cobalt silicide CoSi.sub.2 layer in the solid state.

Embodiments of the present invention generally relate to methods of epitaxially growing boron-containing structures. In an embodiment, a method of depositing a structure comprising boron and a Group IV element on a substrate is provided. The method includes heating the substrate at a temperature of about 300 C. or more within a chamber, the substrate having a dielectric material and a single crystal formed thereon. The method further includes flowing a first process gas and a second process gas into the chamber, wherein: the first process gas comprises at least one boron-containing gas comprising a haloborane; and the second process gas comprises at least one Group IV element-containing gas. The method further includes exposing the substrate to the first and second process gases to epitaxially and selectively deposit the structure comprising boron and the Group IV element on the single crystal.

Embodiments of the present invention generally relate to methods of epitaxially growing boron-containing structures. In an embodiment, a method of depositing a structure comprising boron and a Group IV element on a substrate is provided. The method includes heating the substrate at a temperature of about 300 C. or more within a chamber, the substrate having a dielectric material and a single crystal formed thereon. The method further includes flowing a first process gas and a second process gas into the chamber, wherein: the first process gas comprises at least one boron-containing gas comprising a haloborane; and the second process gas comprises at least one Group IV element-containing gas. The method further includes exposing the substrate to the first and second process gases to epitaxially and selectively deposit the structure comprising boron and the Group IV element on the single crystal.

An apparatus and method for growth of a two-dimensional crystal material are provided. In a single atomic layer deposition cycle of atomic layer deposition, a two-dimensional amorphous film is deposited by a deposition unit. The nuclear bond breaking, bonding, and atomic arrangement on the surface of the deposited two-dimensional amorphous film are controlled by a laser system, which transforms the deposited two-dimensional amorphous film into a two-dimensional crystal film. In a deposition process, monitoring result information from a monitoring unit is received by an upper computer, which adjusts at least one of parameters of the laser system and the deposition unit in real-time according to the monitoring result information.

An apparatus and method for growth of a two-dimensional crystal material are provided. In a single atomic layer deposition cycle of atomic layer deposition, a two-dimensional amorphous film is deposited by a deposition unit. The nuclear bond breaking, bonding, and atomic arrangement on the surface of the deposited two-dimensional amorphous film are controlled by a laser system, which transforms the deposited two-dimensional amorphous film into a two-dimensional crystal film. In a deposition process, monitoring result information from a monitoring unit is received by an upper computer, which adjusts at least one of parameters of the laser system and the deposition unit in real-time according to the monitoring result information.