A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.

Proposed are a layered Group III-V arsenic compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] Mx-mAyAsz (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

A preparation method of conductive gallium oxide based on deep learning and heat exchange method. The prediction method includes: obtaining a preparation data of the conductive gallium oxide single crystal, the preparation data includes a seed crystal data, an environmental data, a control data, and a raw material data, the control data comprises a seed crystal coolant flow rate, and the raw material data includes a doping type data and a conductive doping concentration; preprocessing the preparation data to obtain a preprocessed preparation data; inputting the preprocessed preparation data into a trained neural network model, and obtaining a predicted property data corresponding to the conductive gallium oxide single crystal through the trained neural network model, the predicted property data includes a predicted carrier concentration. Therefore, the conductive gallium oxide with a preset carrier concentration is obtained.

A preparation method of conductive gallium oxide based on deep learning and heat exchange method. The prediction method includes: obtaining a preparation data of the conductive gallium oxide single crystal, the preparation data includes a seed crystal data, an environmental data, a control data, and a raw material data, the control data comprises a seed crystal coolant flow rate, and the raw material data includes a doping type data and a conductive doping concentration; preprocessing the preparation data to obtain a preprocessed preparation data; inputting the preprocessed preparation data into a trained neural network model, and obtaining a predicted property data corresponding to the conductive gallium oxide single crystal through the trained neural network model, the predicted property data includes a predicted carrier concentration. Therefore, the conductive gallium oxide with a preset carrier concentration is obtained.

A nano-twinned copper layer is disclosed, wherein over 50% of a volume of the nano-twinned copper layer comprises a plurality of columnar crystal grains, the plurality of columnar crystal grains connect to each other, at least 70% of the plurality of columnar crystal grains are formed by a plurality of nano-twins stacking in an orientation of a [111] crystal axis, and an angle included between two adjacent columnar crystal grains is greater 20° and less than or equal to 60°. In addition, a method for manufacturing the nano-twinned copper layer and a substrate comprising the same are also disclosed.

A nano-twinned copper layer is disclosed, wherein over 50% of a volume of the nano-twinned copper layer comprises a plurality of columnar crystal grains, the plurality of columnar crystal grains connect to each other, at least 70% of the plurality of columnar crystal grains are formed by a plurality of nano-twins stacking in an orientation of a [111] crystal axis, and an angle included between two adjacent columnar crystal grains is greater 20° and less than or equal to 60°. In addition, a method for manufacturing the nano-twinned copper layer and a substrate comprising the same are also disclosed.

A method for monolithically depositing a monocrystalline IV-IV layer that glows when excited and that is composed of a plurality of elements of the IV main group, in particular a GeSn or Si—GeSn layer, the IV-IV layer having a dislocation density less than 6 cm.sup.−2, on an IV substrate, in particular a silicon or germanium substrate, including the following steps: providing a hydride of a first IV element (A), such as Ge.sub.2H.sub.6 or Si.sub.2H.sub.6; providing a halide of a second IV element (B), such as SnCl.sub.4; heating the substrate to a substrate temperature that is less than the decomposition temperature of the pure hydride or of a radical formed therefrom and is sufficiently high that atoms of the first element (A) and of the second element (B) are integrated into the surface in crystalline order, wherein the substrate temperature lies, in particular, in a range between 300° C. and 475° C.; producing a carrier gas flow of an inert carrier gas, in particular N.sub.2, Ar, He, which in particular is not H.sub.3; transporting the hydride and the halide and decomposition products arising therefrom to the surface at a total pressure of at most 300 mbar; depositing the IV-IV layer, or a layer sequence consisting of IV-IV layers of the same type, having a thickness of at least 200 nm, wherein the deposited layer is, in particular, a Si.sub.yGe.sub.1−x−ySn layer, with x>0.08 and y≤1.

A method for monolithically depositing a monocrystalline IV-IV layer that glows when excited and that is composed of a plurality of elements of the IV main group, in particular a GeSn or Si—GeSn layer, the IV-IV layer having a dislocation density less than 6 cm.sup.−2, on an IV substrate, in particular a silicon or germanium substrate, including the following steps: providing a hydride of a first IV element (A), such as Ge.sub.2H.sub.6 or Si.sub.2H.sub.6; providing a halide of a second IV element (B), such as SnCl.sub.4; heating the substrate to a substrate temperature that is less than the decomposition temperature of the pure hydride or of a radical formed therefrom and is sufficiently high that atoms of the first element (A) and of the second element (B) are integrated into the surface in crystalline order, wherein the substrate temperature lies, in particular, in a range between 300° C. and 475° C.; producing a carrier gas flow of an inert carrier gas, in particular N.sub.2, Ar, He, which in particular is not H.sub.3; transporting the hydride and the halide and decomposition products arising therefrom to the surface at a total pressure of at most 300 mbar; depositing the IV-IV layer, or a layer sequence consisting of IV-IV layers of the same type, having a thickness of at least 200 nm, wherein the deposited layer is, in particular, a Si.sub.yGe.sub.1−x−ySn layer, with x>0.08 and y≤1.

Various articles and devices can be manufactured to take advantage of a what is believed to be a novel thermodynamic cycle in which spontaneity is due to an intrinsic entropy equilibration. The novel thermodynamic cycle exploits the quantum phase transition between quantum thermalization and quantum localization. Preferred devices include a phonovoltaic cell, a rectifier and a conductor for use in an integrated circuit.

The present invention relates to a magnetic cesium adsorbent, a preparation method therefor, and a cesium removal method using the same, the preparation method comprising the steps of: (a) preparing a metal hexacyanoferrate; and (b) hydrothermally reacting the metal hexacyanoferrate so as to prepare a metal hexacyanoferrate having a rhombohedral crystal structure.