The present invention relates to a magnetic cesium adsorbent, a preparation method therefor, and a cesium removal method using the same, the preparation method comprising the steps of: (a) preparing a metal hexacyanoferrate; and (b) hydrothermally reacting the metal hexacyanoferrate so as to prepare a metal hexacyanoferrate having a rhombohedral crystal structure.

The object of the present invention is to provide a method for growing a large-size crystal by laser assisted heating and a dedicated device. The device comprises a laser core heating device, a xenon lamp surface heating device, a base, a vacuum cavity and etc. When a crystal is prepared, seeding and crystal growing are implemented by a xenon lamp-laser synergetic heating mode. According to the present invention, the structure and functions of the dedicated device are designed to introduce, at the center of a float melting zone, a laser heating source having high precision and strong controllability, so that a composite heating mode with xenon lamp surface heating and laser core heating is formed; and combined with the control of process, the method and the device solve the difficulty in growing a large-size test crystal bar and enable the growth of the crystal bar having a diameter up to 35 mm so as to facilitate engineering uses.

Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.

The present invention relates to: layered iron arsenide (FeAs), which is more particularly layered FeAs, which, unlike the conventional bulk FeAs, has a two-dimensional (2D) crystal structure, has the ability to be easily exfoliated into nanosheets, and has superconductivity; a method of preparing the same; and a FeAs nanosheet exfoliated from the same.

A method for producing or repairing a three-dimensional work piece, the method comprising the following steps: providing at least one substrate (15); depositing a first layer of a raw material powder onto the substrate (15); and irradiating selected areas of the deposited raw material powder layer with an electromagnetic or particle radiation beam (22) in a site selective manner in accordance with an irradiation pattern which corresponds to a geometry of at least part of a layer of the three-dimensional work piece to be produced, wherein the irradiation is controlled so as to produce a metallurgical bond between the substrate (15) and the raw material powder layer deposited thereon. Moreover, a use and apparatus are likewise disclosed.

A method for producing or repairing a three-dimensional work piece, the method comprising the following steps: providing at least one substrate (15); depositing a first layer of a raw material powder onto the substrate (15); and irradiating selected areas of the deposited raw material powder layer with an electromagnetic or particle radiation beam (22) in a site selective manner in accordance with an irradiation pattern which corresponds to a geometry of at least part of a layer of the three-dimensional work piece to be produced, wherein the irradiation is controlled so as to produce a metallurgical bond between the substrate (15) and the raw material powder layer deposited thereon. Moreover, a use and apparatus are likewise disclosed.

A method for depositing a phosphorus doped silicon arsenide film is disclosed. The method may include, providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, exposing the substrate to a silicon precursor, an arsenic precursor, and a phosphorus dopant precursor, and depositing the phosphorus doped silicon arsenide film over a surface of the substrate. Semiconductor device structures including a phosphorus doped silicon arsenide film deposited by the methods of the disclosure are also provided.

Crystalline NH.sub.4Be.sub.2BO.sub.3F.sub.2 or Be.sub.2BO.sub.3F (abbreviated as BBF) has nonlinear optical effect, is not deliquescent in the air, is chemically stable. They can be used in a variety of nonlinear optical fields and will pioneer the nonlinear optical applications in the deep UV band.

Crystalline NH.sub.4Be.sub.2BO.sub.3F.sub.2 or Be.sub.2BO.sub.3F (abbreviated as BBF) has nonlinear optical effect, is not deliquescent in the air, is chemically stable. They can be used in a variety of nonlinear optical fields and will pioneer the nonlinear optical applications in the deep UV band.

Fabricating a crystalline metal-phosphide layer may include providing a crystalline base substrate and a step of forming a crystalline metal-source layer. The method may further include performing a chemical conversion reaction to convert the metal-source layer to the crystalline metal phosphide layer. One or more corresponding semiconductor structures can be also provided.