Patent classifications
C30B29/54
System based on low-pressure chemical vapor deposition for fabricating perovskite film from organic halide compound and metal halide compound
A system and method for fabricating a perovskite film is provided, the system including a housing for use as a CVD furnace having first and second sections coupled with first and second temperature control units, respectively. The first and second sections correspond substantially to the upstream and downstream of gases, respectively. One or more substrates are loaded in the second section and controlled by the second temperature control unit, and an evaporation unit containing an organic halide material is loaded in the first section and controlled by the first temperature control unit. Each of the substrates is pre-deposited with a metal halide material. The inside of the housing is pumped down to a low pressure.
ELECTRIC FIELD DRIVEN ASSEMBLY OF ORDERED NANOCRYSTAL SUPERLATTICES
An electric field drives nanocrystals dispersed in solvents to assemble into ordered three-dimensional superlattices. A first electrode and a second electrode 214 are in the vessel. The electrodes face each other. A fluid containing charged nanocrystals fills the vessel between the electrodes. The electrodes are connected to a voltage supply which produces an electrical field between the electrodes. The nanocrystals will migrate toward one of the electrodes and accumulate on the electrode producing ordered nanocrystal accumulation that will provide a superlattice thin film, isolated superlattice islands, or coalesced superlattice islands.
ELECTRIC FIELD DRIVEN ASSEMBLY OF ORDERED NANOCRYSTAL SUPERLATTICES
An electric field drives nanocrystals dispersed in solvents to assemble into ordered three-dimensional superlattices. A first electrode and a second electrode 214 are in the vessel. The electrodes face each other. A fluid containing charged nanocrystals fills the vessel between the electrodes. The electrodes are connected to a voltage supply which produces an electrical field between the electrodes. The nanocrystals will migrate toward one of the electrodes and accumulate on the electrode producing ordered nanocrystal accumulation that will provide a superlattice thin film, isolated superlattice islands, or coalesced superlattice islands.
Quantum dot light-emitting layer, quantum dot light-emitting device and preparing methods therefor
The present disclosure relates to a quantum dot light-emitting layer, a quantum dot light-emitting device and preparing methods therefor and belongs to the field of liquid crystal display. The preparing method for a quantum dot light-emitting layer includes: placing a first halide AX and a second halide BX.sub.2 in a solvent; stirring and dispersing the reaction system formed by the first halide AX, the second halide BX.sub.2 and the solvent at a set temperature for a set time period; cooling the reaction system at a cooling rate of 0.1° C./24 h-1° C./24 h to generate an A.sub.4BX.sub.6 single crystal thin film containing ABX.sub.3 quantum dots, and using the A.sub.4BX.sub.6 single crystal thin film containing ABX.sub.3 quantum dots as the quantum dot light-emitting layer; wherein A includes one of Cs.sup.+, CH.sub.3NH.sub.3.sup.+ and HC(NH.sub.2).sub.2.sup.+; B includes one of Pb.sup.2+ and Sn.sup.2+; and X includes one of Cl.sup.−, Br.sup.− and I.sup.−.
OPTIMIZED GROWTH OF STABLE HYBRID PEROVSKITE MATERIALS FOR ELECTROMAGNETIC AND PARTICLE RADIATION DETECTION
Inverse temperature crystallization processes are provided to produce perovskite single crystals (PSCs), as well as surface passivation techniques for producing stabilizing the PSCs in the bulk region. Stable hybrid perovskite material include a bulk region comprising a single crystal perovskite material having a first bandgap and a smooth perovskite surface layer having a second bandgap greater than the first bandgap. Devices for detection and energy conversion are also contemplated, including for spectroscopic photon and elementary particle detection, such as radiation detectors. Crystallization chambers for forming the PSCs are also provided.
OPTIMIZED GROWTH OF STABLE HYBRID PEROVSKITE MATERIALS FOR ELECTROMAGNETIC AND PARTICLE RADIATION DETECTION
Inverse temperature crystallization processes are provided to produce perovskite single crystals (PSCs), as well as surface passivation techniques for producing stabilizing the PSCs in the bulk region. Stable hybrid perovskite material include a bulk region comprising a single crystal perovskite material having a first bandgap and a smooth perovskite surface layer having a second bandgap greater than the first bandgap. Devices for detection and energy conversion are also contemplated, including for spectroscopic photon and elementary particle detection, such as radiation detectors. Crystallization chambers for forming the PSCs are also provided.
SUPRAMOLECULAR TESSELLATION OF RIGID TRIANGULAR MACROCYCLES
Disclosed herein are crystalline compositions comprising tessellated rigid triangular macrocycles in a two-dimensional plane and methods of making the same.
SUPRAMOLECULAR TESSELLATION OF RIGID TRIANGULAR MACROCYCLES
Disclosed herein are crystalline compositions comprising tessellated rigid triangular macrocycles in a two-dimensional plane and methods of making the same.
METHOD FOR CONTROLLING CHARGE-TRANSFER CO-CRYSTALS GROWTH
Methods of preparing hollow charge transfer co-crystals with reproducible habits and morphology are disclosed. The disclosed methods utilize surfactant to guide the crystal growth in aqueous solutions. The size and shape of the co-crystal can be controlled by the surfactant used, the concentration of the surfactant, and electron donor and electron acceptor, incubation temperature, and mixing condition.
METHOD FOR CONTROLLING CHARGE-TRANSFER CO-CRYSTALS GROWTH
Methods of preparing hollow charge transfer co-crystals with reproducible habits and morphology are disclosed. The disclosed methods utilize surfactant to guide the crystal growth in aqueous solutions. The size and shape of the co-crystal can be controlled by the surfactant used, the concentration of the surfactant, and electron donor and electron acceptor, incubation temperature, and mixing condition.