In general, the systems and methods described in this application relate to laser-induced nucleation in continuous flow. A method of laser-induced nucleation in continuous flow includes injecting a saturated solution, undersaturated solution, or supersaturated solution through an inlet of a device. The method can include converting the saturated solution or undersaturated solution into supersaturated solution by changing a temperature of the saturated solution or undersaturated solution. The method can include passing one or more laser pulses through the supersaturated solution within the device. The method can include flowing the saturated solution, undersaturated solution, or the supersaturated solution through an outlet of the device.

A crystal-orientation controlled complex comprising a connected assembly having a thin film shape, in which a plurality of crystal pieces are connected with each other, the crystal pieces having a flake shape and having a main surface and an end surface, wherein the main surface has a crystal orientation relative to a specific crystal plane, and the thin film shaped connected assembly has a polarization singularity.

The present invention relates to the field of luminescent crystals (LCs), and more specifically to Quantum Dots (QDs) of formula A.sup.1.sub.aM.sup.2.sub.bX.sub.c, wherein the substituents are as defined in the specification. The invention provides methods of manufacturing such luminescent crystals, particularly by dispersing suitable starting materials in the presence of a liquid and by the aid of milling balls; to compositions comprising luminescent crystals and to electronic devices, decorative coatings; and to components comprising luminescent crystals.

The present invention relates to the field of luminescent crystals (LCs), and more specifically to Quantum Dots (QDs) of formula A.sup.1.sub.aM.sup.2.sub.bX.sub.c, wherein the substituents are as defined in the specification. The invention provides methods of manufacturing such luminescent crystals, particularly by dispersing suitable starting materials in the presence of a liquid and by the aid of milling balls; to compositions comprising luminescent crystals and to electronic devices, decorative coatings; and to components comprising luminescent crystals.

Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(R.sub.3-vH.sub.vSi)(R.sub.2-wH.sub.wSi).sub.n].sub.xPH.sub.yR.sub.z, where each instance of R and each instance of R are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.

Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(R.sub.3-vH.sub.vSi)(R.sub.2-wH.sub.wSi).sub.n].sub.xPH.sub.yR.sub.z, where each instance of R and each instance of R are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.

According to the present invention, a crystal of reduced glutathione having a reduced content of impurities, particularly L-cysteinyl-L-glycine and a method for producing the same are provided. The present invention relates to a crystal of reduced glutathione, wherein, in a high-performance liquid chromatography (HPLC) analysis, the peak area of L-cysteinyl-L-glycine is 0.02 or less with respect to the peak area of reduced glutathione which is taken as 100.

According to the present invention, a crystal of reduced glutathione having a reduced content of impurities, particularly L-cysteinyl-L-glycine and a method for producing the same are provided. The present invention relates to a crystal of reduced glutathione, wherein, in a high-performance liquid chromatography (HPLC) analysis, the peak area of L-cysteinyl-L-glycine is 0.02 or less with respect to the peak area of reduced glutathione which is taken as 100.

A Perovskite solution is described for use in making a uniform Perovskite layer at high speed to enable low cost production of high efficiency Perovskite devices. The Perovskite solution contains a solvent, an organic Perovskite precursor material, and an inorganic Perovskite precursor material, wherein the amount of solvent is greater than 30 percent by weight and the Perovskite solution has a total solids concentration that is between 30 percent and 70 percent by weight of the Perovskite solution's saturation concentration at a solution temperature of from 20 to 25 degrees Celsius.

A Perovskite solution is described for use in making a uniform Perovskite layer at high speed to enable low cost production of high efficiency Perovskite devices. The Perovskite solution contains a solvent, an organic Perovskite precursor material, and an inorganic Perovskite precursor material, wherein the amount of solvent is greater than 30 percent by weight and the Perovskite solution has a total solids concentration that is between 30 percent and 70 percent by weight of the Perovskite solution's saturation concentration at a solution temperature of from 20 to 25 degrees Celsius.