Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(R.sub.3-vH.sub.vSi)—(R.sub.2-wH.sub.wSi).sub.n].sub.xPH.sub.yR′.sub.z, where each instance of R and each instance of R′ are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.

In one aspect, the invention relates to a compound of the structure: ##STR00001##
or a pharmaceutically acceptable salt thereof, and a crystalline form of this compound, having neprilysin inhibition activity. In another aspect, the invention relates to pharmaceutical compositions comprising this compound; methods of using this compound; and processes for preparing this compound.

In one aspect, the invention relates to a compound of the structure: ##STR00001##
or a pharmaceutically acceptable salt thereof, and a crystalline form of this compound, having neprilysin inhibition activity. In another aspect, the invention relates to pharmaceutical compositions comprising this compound; methods of using this compound; and processes for preparing this compound.

The present disclosure relates to a method of preparing a halide perovskite single crystal, including a process of enhancing a solubility of a precursor by using a low-temperature solvent.

The present disclosure relates to a method of preparing a halide perovskite single crystal, including a process of enhancing a solubility of a precursor by using a low-temperature solvent.

A method of forming an organic solid crystal (OSC) thin film includes forming a layer of molecular feedstock over a surface of a substrate, the molecular feedstock including an organic solid crystal precursor, forming crystal nuclei from the organic solid crystal precursor within a nucleation region of the layer of molecular feedstock, and growing the crystal nuclei to form the organic solid crystal thin film.

A method of forming an organic solid crystal (OSC) thin film includes forming a layer of molecular feedstock over a surface of a substrate, the molecular feedstock including an organic solid crystal precursor, forming crystal nuclei from the organic solid crystal precursor within a nucleation region of the layer of molecular feedstock, and growing the crystal nuclei to form the organic solid crystal thin film.

A radiation detector includes a p-i-n architecture including a p-type contact layer, an n-type contact layer, and an intrinsic layer between the p-type contact layer and the n-type contact layer. The intrinsic layer includes a thin film comprising a highly crystalline 2D layered perovskite material. The radiation detectors according to embodiments of the present disclosure generate high open circuit voltages, have good detecting photon density limits and high sensitivities, and can be self-powered.

A radiation detector includes a p-i-n architecture including a p-type contact layer, an n-type contact layer, and an intrinsic layer between the p-type contact layer and the n-type contact layer. The intrinsic layer includes a thin film comprising a highly crystalline 2D layered perovskite material. The radiation detectors according to embodiments of the present disclosure generate high open circuit voltages, have good detecting photon density limits and high sensitivities, and can be self-powered.

A refining method according to the present invention is a refining method for crystallizing a compound with at least one crystal form, including setting, as a target wavelength and a target concentration, a specific infrared wavelength and a specific concentration at which a specific crystal form precipitates from a solution of the compound dissolved in a solvent, and using an infrared radiation apparatus capable of emitting infrared radiation including the target wavelength to evaporate the solvent and precipitate the specific crystal form while irradiating a solution of the compound dissolved in the solvent at the target concentration with infrared radiation including the target wavelength.