Patent classifications
C30B29/60
INORGANIC HALIDE PEROVSKITE NANOWIRES AND METHODS OF FABRICATION THEREOF
This disclosure provides systems, methods, and apparatus related to inorganic halide perovskite nanowires. In one aspect, a first solution comprising cesium oleate or rubidium oleate in a first organic solvent is provided. A second solution comprising a lead halide and a surfactant in a second organic solvent is provided. The halide is selected from a group consisting of chlorine, bromine, and iodine. The first solution and the second solution are mixed. A reaction between the cesium oleate or the rubidium oleate and the lead halide forms a plurality of nanowires comprising an inorganic lead halide perovskite.
INORGANIC HALIDE PEROVSKITE NANOWIRES AND METHODS OF FABRICATION THEREOF
This disclosure provides systems, methods, and apparatus related to inorganic halide perovskite nanowires. In one aspect, a first solution comprising cesium oleate or rubidium oleate in a first organic solvent is provided. A second solution comprising a lead halide and a surfactant in a second organic solvent is provided. The halide is selected from a group consisting of chlorine, bromine, and iodine. The first solution and the second solution are mixed. A reaction between the cesium oleate or the rubidium oleate and the lead halide forms a plurality of nanowires comprising an inorganic lead halide perovskite.
Multilayer stack for the growth of carbon nanotubes by chemical vapor deposition
The subject of the invention is the use, as catalyst support sublayer in a process for growing carbon nanotubes by chemical vapour deposition (CVD), of a multilayer stack formed of alternating layers of silica and of alumina, each of the layers having a thickness of less than or equal to 10 nm and consisting of one or more superposed atomic monolayer(s). It also relates to a multilayer structure comprising a substrate which has, on at least one of its faces, such a multilayer stack, and also to the use thereof for the growth of a mat of carbon nanotubes, which are in particular spinnable, by chemical vapour deposition, preferably hot-filament chemical vapour deposition.
Quantum dot having core-shell structure
A quantum dot having core-shell structure includes a core formed of ZnO.sub.zS.sub.1-z, and at least one shell covering the core, and formed of Al.sub.xGa.sub.yIn.sub.1-x-yN, wherein at least one of x, y, and z is not zero and is not one.
Quantum dot having core-shell structure
A quantum dot having core-shell structure includes a core formed of ZnO.sub.zS.sub.1-z, and at least one shell covering the core, and formed of Al.sub.xGa.sub.yIn.sub.1-x-yN, wherein at least one of x, y, and z is not zero and is not one.
SYNTHESIS METHOD FOR TIO2 NANOCRYSTAL
Provided is a method for synthesizing TiO.sub.2 nanocrystal, comprising: adjusting the pH value of a colloidal suspension of tetratitanic acid nanosheet as a precursor to 5-13; and subjecting the precursor to a hydrothermal reaction to obtain the TiO.sub.2 nanocrystal. The TiO.sub.2 nanocrystal synthesized by the method is anatase-type, and the exposed crystal facet thereof is {010} crystal facet. The method has advantages of low cost, no pollution, simple synthesizing process, strong controllability, short production period and good reproducibility, and is suitable for industrial production.
Branched nanowires and method of fabrication
A new set of branched nanowire or nanotree structures and their fabrication process. Some structures have one or more of the following distinctions from other branched nanowires: (1) the trunk and branch diameter and branching number density can be changed along the trunk's length; (2) the branch's azimuthal direction can be controlled along the trunk's length; (3) the branch's diameter can be modulated along its length; (4) the crystal orientation and branches of the ensemble of nanowires can be aligned on a non-epitaxially matched substrate. The structures are made by a geometrically controlled kinetic growth method.
Branched nanowires and method of fabrication
A new set of branched nanowire or nanotree structures and their fabrication process. Some structures have one or more of the following distinctions from other branched nanowires: (1) the trunk and branch diameter and branching number density can be changed along the trunk's length; (2) the branch's azimuthal direction can be controlled along the trunk's length; (3) the branch's diameter can be modulated along its length; (4) the crystal orientation and branches of the ensemble of nanowires can be aligned on a non-epitaxially matched substrate. The structures are made by a geometrically controlled kinetic growth method.
Two-Dimensional, Ordered, Double Transition Metals Carbides Having A Nominal Unit Cell Composition M'2M"NXN+1
The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M′.sub.2M″nX.sub.n+1, such that each X is positioned within an octahedral array of M′ and M″; wherein M′ and M″ each comprise different Group 11113, WE, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M′ atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M″ atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M″ atoms are sandwiched between the two-dimensional outer arrays of M′ atoms within the two-dimensional army of crystal cells.
Two-Dimensional, Ordered, Double Transition Metals Carbides Having A Nominal Unit Cell Composition M'2M"NXN+1
The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M′.sub.2M″nX.sub.n+1, such that each X is positioned within an octahedral array of M′ and M″; wherein M′ and M″ each comprise different Group 11113, WE, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M′ atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M″ atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M″ atoms are sandwiched between the two-dimensional outer arrays of M′ atoms within the two-dimensional army of crystal cells.