Methods for producing silver nanostructures with improved dimensional control, yield, purity, monodispersed, and scale of synthesis.

Methods for producing silver nanostructures with improved dimensional control, yield, purity, monodispersed, and scale of synthesis.

Core-shell nanostructures with platinum overlayers conformally coating palladium nano-substrate cores and facile solution-based methods for the preparation of such core-shell nanostructures are described herein. The obtained Pd@Pt core-shell nanocatalysts showed enhanced specific and mass activities towards oxygen reduction, compared to a commercial Pt/C catalyst.

Core-shell nanostructures with platinum overlayers conformally coating palladium nano-substrate cores and facile solution-based methods for the preparation of such core-shell nanostructures are described herein. The obtained Pd@Pt core-shell nanocatalysts showed enhanced specific and mass activities towards oxygen reduction, compared to a commercial Pt/C catalyst.

A nanostructured material includes carbon nanoparticles (CNPs), such as carbon nanotube particles (CNTs) or carbon nanofiber particles (CNFs), intercalated by intercalation nanoparticles (INPs), such as halloysite nanoparticles (HNPs), in a base material, such as a polymer. A method for making the nanostructured material includes the steps of: providing a mixture of carbon nanoparticles (CNPs) having a selected composition; providing intercalation nanoparticles (INPs) configured to intercalate the carbon nanoparticles (CNPs); intercalating the carbon nanoparticles (CNPs) by mixing the intercalation nanoparticles (INPs) in a selected CNP:HNP ratio to form an intercalated material; and combining the intercalated material in a base material in a selected concentration with the base material providing a matrix for the intercalated material.

A method of site-selective growth of a nanocrystal from an anisotropic seed can include immersing an anisotropic seed functionalized with a ligand in a growth solution having a nanocrystal precursor, a complexing agent, and a reducing agent to form a growth solution, wherein an amount of the reducing agent and/or any amount of the complexing agent is selected to define a supersaturation of the growth solution that is sufficient for overcoming an energy barrier of one or more selected regions of the functionalized seed to selectively growth the nanocrystal at the one or more selected regions.

A method of site-selective growth of a nanocrystal from an anisotropic seed can include immersing an anisotropic seed functionalized with a ligand in a growth solution having a nanocrystal precursor, a complexing agent, and a reducing agent to form a growth solution, wherein an amount of the reducing agent and/or any amount of the complexing agent is selected to define a supersaturation of the growth solution that is sufficient for overcoming an energy barrier of one or more selected regions of the functionalized seed to selectively growth the nanocrystal at the one or more selected regions.

Nanostructures formed of metal nanostrands, and methods of forming the nanostrands, are described. These nanostructures can be used as a flexible or non-flexible, transparent or non-transparent conductive films or electronic circuit for various different applications. An example metal nanostrand can include: a first nanoplate joined laterally to a second nanoplate. Each of the nanoplates can have a top surface, a bottom surface and one or more side surfaces laterally extending from the top surface to the bottom surface. A (111) crystallographic plane can be arranged at each of the top surface and the bottom surface.

Nanostructures formed of metal nanostrands, and methods of forming the nanostrands, are described. These nanostructures can be used as a flexible or non-flexible, transparent or non-transparent conductive films or electronic circuit for various different applications. An example metal nanostrand can include: a first nanoplate joined laterally to a second nanoplate. Each of the nanoplates can have a top surface, a bottom surface and one or more side surfaces laterally extending from the top surface to the bottom surface. A (111) crystallographic plane can be arranged at each of the top surface and the bottom surface.

A method for growing at least one III/V nano-ridge on a silicon substrate in an epitaxial growth chamber. The method comprises: patterning an area on a silicon substrate thereby forming a trench on the silicon substrate; growing the III/V nano-ridge by initiating growth of the III/V nano-ridge in the trench, thereby forming and filling layer of the nano-ridge inside the trench, and by continuing growth out of the trench on top of the filling layer, thereby forming a top part of the nano-ridge, wherein at least one surfactant is added in the chamber when the nano-ridge is growing out of the trench.