The present invention refers to a method for preparing a network of nanowires; to a network of nanowires obtainable by said method; to a nonwoven material comprising the network, to an electrode comprising the network, a pharmaceutical composition 10 comprising the network of nanowires, to the use of the network of nanowires and to the use of the nonwoven material.

A method of producing transition-metal dichalcogenide crystals includes providing a silicon substrate having a phosphine-treated surface, exposing the phosphine-treated surface of the silicon substrate to a vapor containing a transition metal, and exposing the phosphine-treated surface of the silicon substrate to a vapor containing a chalcogen. A crystal of the transition-metal and the chalcogen is formed on the phosphine-treated surface of the silicon substrate to produce a transition-metal dichalcogenide crystal by chemical vapor deposition.

A method of producing transition-metal dichalcogenide crystals includes providing a silicon substrate having a phosphine-treated surface, exposing the phosphine-treated surface of the silicon substrate to a vapor containing a transition metal, and exposing the phosphine-treated surface of the silicon substrate to a vapor containing a chalcogen. A crystal of the transition-metal and the chalcogen is formed on the phosphine-treated surface of the silicon substrate to produce a transition-metal dichalcogenide crystal by chemical vapor deposition.

An electrical device includes an aluminum nitride passivation layer for a mercury cadmium telluride (Hg.sub.1-xCd.sub.xTe) (MCT) semiconductor layer of the device. The AlN passivation layer may be an un-textured amorphous-to-polycrystalline film that is deposited onto the surface of the MCT in its as-grown state, or overlying the MCT after the MCT surface has been pre-treated or partially passivated, in this way fully passivating the MCT. The AlN passivation layer may have a coefficient of thermal expansion (CTE) that closely matches the CTE of the MCT layer, thereby reducing strain at an interface to the MCT. The AlN passivation layer may be formed with a neutral inherent (residual) stress, provide mechanical rigidity, and chemical resistance to protect the MCT.

Proposed are a layered compound having indium and phosphide, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by K.sub.1-xIn.sub.yP.sub.z (0≤x≤1.0, 0.75≤y≤1.25, 1.25≤z≤1.75).

A system and method are disclosed of electrostatic alignment and surface assembly of photonic crystals for dynamic color exhibition. The method includes: dispersing a plurality of photonic crystal chains into a solution; placing the solution of the plurality of photonic crystal chains in a container; and assembling and aligning the plurality of photonic crystal chains in the solution by a local charge build up on a surface of the container to exhibit color.

Filled carbon nanotubes (CNTs) and methods of synthesizing the same are provided. An in situ chemical vapor deposition technique can be used to synthesize CNTs filled with metal sulfide nanowires. The CNTs can be completely and continuously filled with the metal sulfide fillers up to several micrometers in length. The filled CNTs can be easily collected from the substrates used for synthesis using a simple ultrasonication method.

A cobalt-free single crystal composite material, and a preparation method therefor and a use thereof. The cobalt-free single crystal material is of a core-shell structure, the core layer is the cobalt-free single crystal material, and the shell layer is prepared from TiNb.sub.2O.sub.7 and conductive lithium salt. The TiNb.sub.2O.sub.7 and the conductive lithium salt are selected as materials of the shell layer to coat the cobalt-free single crystal material, thereby improving the lithium ion conductivity of the cobalt-free single crystal material, and further improving the capacity and the first effect of the material.

A device includes a substrate, and a plurality of structures supported by the substrate, each structure of the plurality of structures including a Group III-nitride base, first and second Group III-nitride charge carrier injection layers supported by the Group III-nitride base, and a quantum heterostmcture disposed between the first and second charge carrier injection layers. The quantum hetero structure includes a pair of Group III-nitride barrier layers, and a Group III-nitride active layer disposed between the pair of Group III-nitride barrier layers. The Group III-nitride active layer has a thickness for quantum confinement of charge carriers. At least one of the pair of Group III-nitride barrier layers has a nitride surface adjacent to the Group III-nitride active layer.

Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.