A cold crucible structure according to an embodiment of the present invention includes a cold crucible structure according to an embodiment of the present invention includes: a cold crucible unit including hollow top and bottom caps, a plurality of segments connecting the top cap and the bottom cap, slits disposed between the segments, and a reaction area surrounded by the segments; and an induction coil unit disposed to cover the outer side of the cold crucible unit and disposed across the longitudinal directions of the segments and the slits, in which the diameter of the reaction area is defined as a crucible diameter, the crucible diameter is 100 to 300 mm, and a width of each of the slits is defined by $d_{\mathrm{slit}}\le 0.3\times \frac{\varnothing }{50}$
(mm)(where d.sub.slit is the width of each of the slits and Ø is the crucible diameter).

A method is provided. The method includes providing an alignment structure at least partially defining a predetermined alignment pattern. The method also includes forming a solid crystal on the alignment structure. Crystal molecules of the solid crystal are aligned in the predetermined alignment pattern.

A method is provided. The method includes providing an alignment structure at least partially defining a predetermined alignment pattern. The method also includes forming a solid crystal on the alignment structure. Crystal molecules of the solid crystal are aligned in the predetermined alignment pattern.

An optical element is provided. The optical element includes a solid crystal including crystal molecules aligned in a predetermined alignment pattern at least partially defined by an alignment structure.

Disclosed herein are systems and methods for the controlled crystallization of a compound. The controlled crystallization is achieved by applying an electric field across solutions of target compound and precipitant, whereby the electric field controls the rate of mixing.

Disclosed herein are systems and methods for the controlled crystallization of a compound. The controlled crystallization is achieved by applying an electric field across solutions of target compound and precipitant, whereby the electric field controls the rate of mixing.

An electric field drives nanocrystals dispersed in solvents to assemble into ordered three-dimensional superlattices. A first electrode and a second electrode 214 are in the vessel. The electrodes face each other. A fluid containing charged nanocrystals fills the vessel between the electrodes. The electrodes are connected to a voltage supply which produces an electrical field between the electrodes. The nanocrystals will migrate toward one of the electrodes and accumulate on the electrode producing ordered nanocrystal accumulation that will provide a superlattice thin film, isolated superlattice islands, or coalesced superlattice islands.

An electric field drives nanocrystals dispersed in solvents to assemble into ordered three-dimensional superlattices. A first electrode and a second electrode 214 are in the vessel. The electrodes face each other. A fluid containing charged nanocrystals fills the vessel between the electrodes. The electrodes are connected to a voltage supply which produces an electrical field between the electrodes. The nanocrystals will migrate toward one of the electrodes and accumulate on the electrode producing ordered nanocrystal accumulation that will provide a superlattice thin film, isolated superlattice islands, or coalesced superlattice islands.

A manufacturing method of an epitaxial silicon wafer uses a silicon wafer containing phosphorus, having a resistivity of less than 1.0 m.Math.cm. The silicon wafer has a main surface to which a (100) plane is inclined and a [100] axis that is perpendicular to the (100) plane and inclined at an angle ranging from 05 to 025 with respect to an axis orthogonal to the main surface. The manufacturing method includes: annealing the silicon wafer at a temperature from 1200 degrees C. to 1220 degrees C. for 30 minutes or more under argon gas atmosphere (argon-annealing step); etching a surface of the silicon wafer (prebaking step); and growing the epitaxial film at a growth temperature ranging from 1100 degrees C. to 1165 degrees C. on the surface of the silicon wafer (epitaxial film growth step).

Disclosed herein are systems and methods for the controlled crystallization of a compound. The controlled crystallization is achieved by applying an electric field across solutions of target compound and precipitant, whereby the electric field controls the rate of mixing.