Disclosed herein are systems and methods for the controlled crystallization of a compound. The controlled crystallization is achieved by applying an electric field across solutions of target compound and precipitant, whereby the electric field controls the rate of mixing.

A system and method are disclosed of electrostatic alignment and surface assembly of photonic crystals for dynamic color exhibition. The method includes: dispersing a plurality of photonic crystal chains into a solution; placing the solution of the plurality of photonic crystal chains in a container; and assembling and aligning the plurality of photonic crystal chains in the solution by a local charge build up on a surface of the container to exhibit color.

A cold crucible structure according to an embodiment of the present invention includes a cold crucible structure according to an embodiment of the present invention includes: a cold crucible unit including hollow top and bottom caps, a plurality of segments connecting the top cap and the bottom cap, slits disposed between the segments, and a reaction area surrounded by the segments; and an induction coil unit disposed to cover the outer side of the cold crucible unit and disposed across the longitudinal directions of the segments and the slits, in which the diameter of the reaction area is defined as a crucible diameter, the crucible diameter is 100 to 300 mm, and gaps of the slits are defined by

[00001]$d_{\mathrm{slit}}0.3\frac{}{50}$

(mm)(where d.sub.slit is the gap between the slits and is the crucible diameter).

Disclosed herein are methods of preparing a composition comprising crystalline biomolecules, for example, crystalline antibodies. In exemplary embodiments, the method comprises forming a fluidized bed of crystalline biomolecules using, for example, a counter-flow centrifuge to exchange buffer and/or to concentrate the crystalline biomolecules in a solution. Also provided are methods of detecting crystalline biomolecules and/or amorphous biomolecules in a sample.

Provided are a protein crystal device and method for crystallizing protein capable of generating protein crystal without imparting a heat effect, a protein crystal-cutting device and method for cutting protein crystal capable of cutting protein crystal without imparting a heat effect on protein crystal, and bubble-jetting member and protein-adsorbing-bubble-jetting member used in said device. A bubble-jetting member is used in a protein crystal device to jet bubbles into a protein solution to thereby allow protein crystals to be obtained, the bubble-jetting member comprising: a core formed of a conductive material; a shell part formed of an insulating material, including an extended section extending from the tip of the core, and in which at least a portion closely adheres to the core to cover the core; and a gap having a bubble-jetting port, the gap being formed between the extended section and the tip of the core.

Provided are a protein crystal device and method for crystallizing protein capable of generating protein crystal without imparting a heat effect, a protein crystal-cutting device and method for cutting protein crystal capable of cutting protein crystal without imparting a heat effect on protein crystal, and bubble-jetting member and protein-adsorbing-bubble-jetting member used in said device. A bubble-jetting member is used in a protein crystal device to jet bubbles into a protein solution to thereby allow protein crystals to be obtained, the bubble-jetting member comprising: a core formed of a conductive material; a shell part formed of an insulating material, including an extended section extending from the tip of the core, and in which at least a portion closely adheres to the core to cover the core; and a gap having a bubble-jetting port, the gap being formed between the extended section and the tip of the core.

A method of making a quasi-phase-matching (QPM) structure comprising the steps of: applying a pattern to a substrate to define a plurality of growth regions and a plurality of voids; growing in a growth chamber a crystalline inorganic material on only the growth regions in the pattern, the crystalline inorganic material having a first polarity; applying an electric field within the growth chamber containing the patterned substrate with the crystalline inorganic material, wherein the electric field reaches throughout the growth chamber; and growing a crystalline organic material having a second polarity in the voids formed in the inorganic material under the influence of the electric field to influence the magnitude and the direction of the second polarity of the crystalline organic material, wherein the second polarity of the crystalline organic material is influenced to be different from the first polarity of the crystalline inorganic material in magnitude and/or direction.

A method of making a quasi-phase-matching (QPM) structure comprising the steps of: applying a pattern to a substrate to define a plurality of growth regions and a plurality of voids; growing in a growth chamber a crystalline inorganic material on only the growth regions in the pattern, the crystalline inorganic material having a first polarity; applying an electric field within the growth chamber containing the patterned substrate with the crystalline inorganic material, wherein the electric field reaches throughout the growth chamber; and growing a crystalline organic material having a second polarity in the voids formed in the inorganic material under the influence of the electric field to influence the magnitude and the direction of the second polarity of the crystalline organic material, wherein the second polarity of the crystalline organic material is influenced to be different from the first polarity of the crystalline inorganic material in magnitude and/or direction.

A manufacturing method of an epitaxial silicon wafer uses a silicon wafer containing phosphorus, having a resistivity of less than 1.0 m.Math.cm. The silicon wafer has a main surface to which a (100) plane is inclined and a [100] axis that is perpendicular to the (100) plane and inclined at an angle ranging from 05 to 025 with respect to an axis orthogonal to the main surface. The manufacturing method includes: annealing the silicon wafer at a temperature from 1200 degrees C. to 1220 degrees C. for 30 minutes or more under argon gas atmosphere (argon-annealing step); etching a surface of the silicon wafer (prebaking step); and growing the epitaxial film at a growth temperature ranging from 1100 degrees C. to 1165 degrees C. on the surface of the silicon wafer (epitaxial film growth step).

Electrochemical liquid phase epitaxy (ec-LPE) processes and devices are provided that can form precipitated epitaxial crystalline films or layers on a substrate. The precipitated films may comprise a semiconductor, such as germanium, silicon, or carbon. Dissolution into, saturation within, and precipitation of the semiconductor from a liquid metal electrode (e.g., Hg pool) near an interface region with a substrate yields a polycrystalline semiconductor material deposited as an epitaxial film. Reactor cells for use in an electrochemical liquid phase epitaxy (ec-LPE) device are also provided that include porous membranes to facilitate formation of the precipitated epitaxial crystalline films.