A method is provided. The method includes providing an alignment structure at least partially defining a predetermined alignment pattern. The method also includes forming a solid crystal on the alignment structure. Crystal molecules of the solid crystal are aligned in the predetermined alignment pattern.

A method is provided. The method includes providing an alignment structure at least partially defining a predetermined alignment pattern. The method also includes forming a solid crystal on the alignment structure. Crystal molecules of the solid crystal are aligned in the predetermined alignment pattern.

An optical element is provided. The optical element includes a solid crystal including crystal molecules aligned in a predetermined alignment pattern at least partially defined by an alignment structure.

A magnet coil for magnetic Czochralski single crystal growth includes: a first coil a second coil, and an auxiliary coil arranged between the first coil and the second coil. A distance between the first coil and a first edge of the auxiliary coil close to the first coil is equal to a distance between the second coil and a second edge of the auxiliary coil close to the second coil. The auxiliary coil, the first coil and the second coil have a common. When being energized, a direction of a current in the first coil is opposite to a direction of a current in the second coil, and a magnetic field generated by a current in the auxiliary coil is used for enhancing the a cusp magnetic field between the first coil and the second coil.

A magnet coil for magnetic Czochralski single crystal growth includes: a first coil a second coil, and an auxiliary coil arranged between the first coil and the second coil. A distance between the first coil and a first edge of the auxiliary coil close to the first coil is equal to a distance between the second coil and a second edge of the auxiliary coil close to the second coil. The auxiliary coil, the first coil and the second coil have a common. When being energized, a direction of a current in the first coil is opposite to a direction of a current in the second coil, and a magnetic field generated by a current in the auxiliary coil is used for enhancing the a cusp magnetic field between the first coil and the second coil.

A method of manufacturing monocrystalline silicon by flowing inert gas in a chamber, applying horizontal magnetic field to a silicon melt in a quartz crucible, and pulling up monocrystalline silicon includes: forming a flow distribution of a flow of the inert gas flowing between a lower end of a heat shield and a surface of the silicon melt in the quartz crucible to be plane asymmetric with respect to a plane defined by a crystal pull-up axis of the pull-up device and an application direction of the horizontal magnetic field and rotationally asymmetric with respect to the crystal pull-up axis: maintaining the formed plane asymmetric and rotationally asymmetric flow distribution in a magnetic-field-free state until a silicon material in the quartz crucible is completely melted; and applying the horizontal magnetic field to the completely melted silicon material and starting pulling up the monocrystalline silicon.

A method of manufacturing monocrystalline silicon by flowing inert gas in a chamber, applying horizontal magnetic field to a silicon melt in a quartz crucible, and pulling up monocrystalline silicon includes: forming a flow distribution of a flow of the inert gas flowing between a lower end of a heat shield and a surface of the silicon melt in the quartz crucible to be plane asymmetric with respect to a plane defined by a crystal pull-up axis of the pull-up device and an application direction of the horizontal magnetic field and rotationally asymmetric with respect to the crystal pull-up axis: maintaining the formed plane asymmetric and rotationally asymmetric flow distribution in a magnetic-field-free state until a silicon material in the quartz crucible is completely melted; and applying the horizontal magnetic field to the completely melted silicon material and starting pulling up the monocrystalline silicon.

A method of controlling a convection pattern of a silicon melt includes: acquiring a temperature at a first measurement point not overlapping a rotation center of a quartz crucible on a surface of the silicon melt, the quartz crucible rotating in a magnetic-field-free state; determining that the temperature at the first measurement point periodically changes; and fixing a direction of a convection flow to a single direction in a plane orthogonal with an application direction of a horizontal magnetic field in the silicon melt by starting a drive of a magnetic-field applying portion to apply the horizontal magnetic field to the silicon melt when a temperature change at the first measurement point reaches a predetermined state, and subsequently raising the intensity to 0.2 tesla or more.

A method of controlling a convection pattern of a silicon melt includes: acquiring a temperature at a first measurement point not overlapping a rotation center of a quartz crucible on a surface of the silicon melt, the quartz crucible rotating in a magnetic-field-free state; determining that the temperature at the first measurement point periodically changes; and fixing a direction of a convection flow to a single direction in a plane orthogonal with an application direction of a horizontal magnetic field in the silicon melt by starting a drive of a magnetic-field applying portion to apply the horizontal magnetic field to the silicon melt when a temperature change at the first measurement point reaches a predetermined state, and subsequently raising the intensity to 0.2 tesla or more.

A method includes mixing first and second alloys to form a mixture, pressing the mixture within a first magnetic field to form a magnet having anisotropic particles of the first alloy aligned with a magnetic moment of the magnet, and heat treating the magnet within a second magnetic field to form elongated grains from the second alloy and align the elongated grains with the moment.