A method of manufacturing an epitaxial silicon wafer that includes growing a silicon single crystal ingot doped with a boron concentration of 2.710.sup.17 atoms/cm.sup.3 or more and 1.310.sup.19 atoms/cm.sup.3 or less by the CZ method; producing a silicon substrate by processing the silicon single crystal ingot; and forming an epitaxial layer on a surface of the silicon substrate. During growing of the silicon single crystal ingot, the pull-up conditions of the silicon single crystal ingot are controlled so that the boron concentration Y (atoms/cm.sup.3) and an initial oxygen concentration X (10.sup.17 atoms/cm.sup.3) satisfy the expression X4.310.sup.19Y+16.3.

A silicon single crystal manufacturing method by a Czochralski method pulls up a silicon single crystal from a silicon melt in a quartz crucible while applying a magnetic field to the silicon melt. During a pull-up process of the silicon single crystal, the surface temperature of the silicon melt is continuously measured, and crystal growth conditions are changed based on a result of frequency analysis of the surface temperature.

A silicon single crystal manufacturing method by a Czochralski method pulls up a silicon single crystal from a silicon melt in a quartz crucible while applying a magnetic field to the silicon melt. During a pull-up process of the silicon single crystal, the surface temperature of the silicon melt is continuously measured, and crystal growth conditions are changed based on a result of frequency analysis of the surface temperature.

Single crystal semiconductor wafers comprise oxygen and an n-type dopant, and are produced by a process comprising providing a silicon melt containing n-type dopant in a quartz crucible, the melt having an initial height hM; heating the melt from the side by selectively supplying heat to an upper volume of the melt having an initial height hm, wherein hm is smaller than hM; pulling a single crystal of silicon from the melt by the CZ method with a pulling velocity V; heating the melt from above in the region of a phase boundary between the growing single crystal and the melt; heating the melt from above in the region of a surface of the melt; subjecting the melt to a magnetic field; counterdoping the melt with p-type dopant; and
separating the semiconductor wafer of single-crystal silicon from the single crystal. An apparatus for accomplishing the process is also disclosed.

Single crystal semiconductor wafers comprise oxygen and an n-type dopant, and are produced by a process comprising providing a silicon melt containing n-type dopant in a quartz crucible, the melt having an initial height hM; heating the melt from the side by selectively supplying heat to an upper volume of the melt having an initial height hm, wherein hm is smaller than hM; pulling a single crystal of silicon from the melt by the CZ method with a pulling velocity V; heating the melt from above in the region of a phase boundary between the growing single crystal and the melt; heating the melt from above in the region of a surface of the melt; subjecting the melt to a magnetic field; counterdoping the melt with p-type dopant; and
separating the semiconductor wafer of single-crystal silicon from the single crystal. An apparatus for accomplishing the process is also disclosed.

The present disclosure discloses a shell mold chamber, a foundry furnace and a method for casting single crystal, fine crystal and non-crystal, which employ the technique of asynchronous-curving supercooling, and belongs to the technical field of precise casting apparatuses. Such a three-function foundry furnace includes a heating coil winding, a first thermal-shield assembly, a first superconducting coil, a second thermal-shield assembly and a second superconducting coil; and the first superconducting coil is provided at an inside of the first thermal-shield assembly, and the second superconducting coil is provided at an inside of the second thermal-shield assembly; and directions of a magnetic field generated by the first superconducting coil and a magnetic field generated by the second superconducting coil are opposite; and the first superconducting coil and the heating coil winding form a forward-directional static-magnetic-field heating zone, and the second superconducting coil forms a reverse-directional static-magnetic-field zone.

The present disclosure discloses a shell mold chamber, a foundry furnace and a method for casting single crystal, fine crystal and non-crystal, which employ the technique of asynchronous-curving supercooling, and belongs to the technical field of precise casting apparatuses. Such a three-function foundry furnace includes a heating coil winding, a first thermal-shield assembly, a first superconducting coil, a second thermal-shield assembly and a second superconducting coil; and the first superconducting coil is provided at an inside of the first thermal-shield assembly, and the second superconducting coil is provided at an inside of the second thermal-shield assembly; and directions of a magnetic field generated by the first superconducting coil and a magnetic field generated by the second superconducting coil are opposite; and the first superconducting coil and the heating coil winding form a forward-directional static-magnetic-field heating zone, and the second superconducting coil forms a reverse-directional static-magnetic-field zone.

A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

Provided is an apparatus and method of correcting a magnetic field of a high-temperature chamber. The apparatus includes a high-temperature magnetic field sensor unit for being inserted into a high-temperature chamber in a high-temperature environment and detecting a magnetic field generated by a magnet heater, a magnetic field comparing unit for comparing a result of detection of the high-temperature magnetic field sensor unit with a target magnetic field and obtaining a difference between the detected magnetic field and the target magnetic field, and a current parameter controller for correcting current parameters according to a result of comparison of the magnetic field comparing unit and controlling the magnet heater.