A method of manufacturing is provided that includes providing an n-type silicon wafer, the n-type silicon wafer including n-type dopants partially compensated 20% to 80% by p-type dopants, where a net n-type doping concentration of the n-type silicon wafer is in a range from 110.sup.13 cm.sup.3 to 110.sup.15 cm.sup.3; forming hydrogen related donors in the n-type silicon wafer by irradiating the n-type silicon wafer with protons; and annealing the n-type silicon wafer after forming the hydrogen related donors.

Disclosed herein are methods of preparing a composition comprising crystalline biomolecules, for example, crystalline antibodies. In exemplary embodiments, the method comprises forming a fluidized bed of crystalline biomolecules using, for example, a counter-flow centrifuge to exchange buffer and/or to concentrate the crystalline biomolecules in a solution. Also provided are methods of detecting crystalline biomolecules and/or amorphous biomolecules in a sample.

A single-crystal ingot growing method includes setting a location of an MGP (maximum gauss position) of a magnetic field such that the MGP is located above the surface of a melt, setting a difference in intensity of the magnetic field between a center point of the melt and an edge point of the melt based on the set location of the MGP, setting an intensity of the magnetic field that is applied to the melt based on the set difference in intensity of the magnetic field, and growing a single-crystal ingot based on the set location of the MGP and the set intensity of the magnetic field. The magnetic field is a horizontal magnetic field, the MGP is spaced apart from the surface of the melt by a distance ranging from +50 mm to +150 mm, and the difference in intensity of the magnetic field ranges from 420G to 500G.

A single-crystal ingot growing method includes setting a location of an MGP (maximum gauss position) of a magnetic field such that the MGP is located above the surface of a melt, setting a difference in intensity of the magnetic field between a center point of the melt and an edge point of the melt based on the set location of the MGP, setting an intensity of the magnetic field that is applied to the melt based on the set difference in intensity of the magnetic field, and growing a single-crystal ingot based on the set location of the MGP and the set intensity of the magnetic field. The magnetic field is a horizontal magnetic field, the MGP is spaced apart from the surface of the melt by a distance ranging from +50 mm to +150 mm, and the difference in intensity of the magnetic field ranges from 420G to 500G.

A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.

A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.

Various embodiments include a device for producing structurally modified materials. In some embodiments, the device includes a floating zone furnace which holds a feed rod in contact with seed crystal. One or more laser diodes are then used to heat a portion of the feed rod and cause it to transition to a molten state. A magnetic field is applied to the floating zone to change the underlying crystal structure of the material as it solidifies upon exiting the floating zone. In some instances, the changes may include manipulating the bond angle of the crystal structure or altering the unit cell volume of the crystal. Changes in the crystal structure directly affect the electrical resistivity and/or the magnetization and other physical properties of the crystal.

Various embodiments include a device for producing structurally modified materials. In some embodiments, the device includes a floating zone furnace which holds a feed rod in contact with seed crystal. One or more laser diodes are then used to heat a portion of the feed rod and cause it to transition to a molten state. A magnetic field is applied to the floating zone to change the underlying crystal structure of the material as it solidifies upon exiting the floating zone. In some instances, the changes may include manipulating the bond angle of the crystal structure or altering the unit cell volume of the crystal. Changes in the crystal structure directly affect the electrical resistivity and/or the magnetization and other physical properties of the crystal.

The invention relates to a silicon wafer having a radial variation of oxygen concentration of less than 7%, determined over the entire radius of the silicon wafer. The wafers are produced in the P.sub.V region with rotation of crystal and crucible in the same direction, and in the presence of a horizontal magnetic field of defined intensity.

The invention relates to a silicon wafer having a radial variation of oxygen concentration of less than 7%, determined over the entire radius of the silicon wafer. The wafers are produced in the P.sub.V region with rotation of crystal and crucible in the same direction, and in the presence of a horizontal magnetic field of defined intensity.