The present invention is a single crystal pulling apparatus which includes a pulling furnace having a central axis and a magnetic field generating apparatus having coils, and applies a horizontal magnetic field to a molten semiconductor raw material, wherein the coils are saddle-shaped, two pairs of the coils are provided with the coils of each pair arranged facing each other, two coil axes in the two pairs of coils are included in the same horizontal plane, when a magnetic force line direction on the central axis of the pulling furnace in the horizontal plane is defined as a X-axis, and a direction perpendicular to the X-axis in the horizontal plane is defined as a Y-axis, a center angle ? between the two coil axes sandwiching the X-axis is 90 degrees or less and an inter-coil angle ? between adjacent superconducting coils sandwiching the Y-axis is 20 degrees or less. As a result, the coil height can be reduced by increasing the magnetic field generation efficiency, the magnetic field center can be raised to near the melt surface of the semiconductor raw material, and it is possible to provide a single crystal pulling apparatus and a single crystal pulling method capable of pulling a single crystal with an even lower oxygen concentration than before and a defect-free crystal at a higher speed can be obtained.

The present invention is a single crystal pulling apparatus which includes a pulling furnace having a central axis and a magnetic field generating apparatus having coils, and applies a horizontal magnetic field to a molten semiconductor raw material, wherein the coils are saddle-shaped, two pairs of the coils are provided with the coils of each pair arranged facing each other, two coil axes in the two pairs of coils are included in the same horizontal plane, when a magnetic force line direction on the central axis of the pulling furnace in the horizontal plane is defined as a X-axis, and a direction perpendicular to the X-axis in the horizontal plane is defined as a Y-axis, a center angle ? between the two coil axes sandwiching the X-axis is 90 degrees or less and an inter-coil angle ? between adjacent superconducting coils sandwiching the Y-axis is 20 degrees or less. As a result, the coil height can be reduced by increasing the magnetic field generation efficiency, the magnetic field center can be raised to near the melt surface of the semiconductor raw material, and it is possible to provide a single crystal pulling apparatus and a single crystal pulling method capable of pulling a single crystal with an even lower oxygen concentration than before and a defect-free crystal at a higher speed can be obtained.

A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.

A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.

An apparatus for physical vapor transport growth of semiconductor crystals having a cylindrical vacuum enclosure defining an axis of symmetry; a reaction-cell support for supporting a reaction cell inside the vacuum enclosure; a cylindrical reaction cell made of material that is transparent to RF energy and having a height Hcell defined along the axis of symmetry; an RF coil provided around exterior of the vacuum enclosure and axially centered about the axis of symmetry, wherein the RF coil is configured to generate a uniform RF field along at least the height Hcell; and, an insulation configured for generating thermal gradient inside the reaction cell along the axis of symmetry. The ratio of height of the RF induction coil, measured along the axis of symmetry, to the height Hcell may range from 2.5 to 4.0 or from 2.8 to 4.0.

An apparatus for physical vapor transport growth of semiconductor crystals having a cylindrical vacuum enclosure defining an axis of symmetry; a reaction-cell support for supporting a reaction cell inside the vacuum enclosure; a cylindrical reaction cell made of material that is transparent to RF energy and having a height Hcell defined along the axis of symmetry; an RF coil provided around exterior of the vacuum enclosure and axially centered about the axis of symmetry, wherein the RF coil is configured to generate a uniform RF field along at least the height Hcell; and, an insulation configured for generating thermal gradient inside the reaction cell along the axis of symmetry. The ratio of height of the RF induction coil, measured along the axis of symmetry, to the height Hcell may range from 2.5 to 4.0 or from 2.8 to 4.0.

An induction furnace assembly comprising a chamber having a mold; a primary inductive coil coupled to the chamber; a susceptor surrounding the chamber between the primary inductive coil and the mold; and a shield material contained in a reservoir coupled to or proximate the mold between the susceptor and the mold; the shield material configured to attenuate a portion of an electromagnetic flux generated by the primary induction coil that is not attenuated by the susceptor.

An induction furnace assembly comprising a chamber having a mold; a primary inductive coil coupled to the chamber; a susceptor surrounding the chamber between the primary inductive coil and the mold; and a shield material contained in a reservoir coupled to or proximate the mold between the susceptor and the mold; the shield material configured to attenuate a portion of an electromagnetic flux generated by the primary induction coil that is not attenuated by the susceptor.

The present invention relates to a technique for flow crystallization. The system comprises a container having a bottom surface defining a first plane, the container including at least two planar magnetic surfaces being arranged in a spaced-apart manner along a first plane and being substantially parallel to a second plane; a magnetization vector of each of the magnetic surfaces being perpendicularly to the surface, wherein the container is configured such that the first plane is substantially perpendicularly to the second plane; wherein a cavity formed in between the planar magnetic surfaces is configured to accommodate a racemic mixture including different enantiomers such that each magnetic surface interacts differently with each of the different enantiomers to thereby enable enantio-selective crystallization. Therefore, the system of the present invention is based on enantio-separation of the crystals using magnetic surfaces.

The present invention provides a crystal growing method, an apparatus and a RF-SOI substrate for growing a crystal. The crystal growing method may comprise: controlling a first superconducting coil to generate a first current, and controlling a second superconducting coil to generate a second current, wherein a value of the first current is not equal to a value of the second current, the first superconducting coil and the second superconducting coil are superconducting coils positioned oppositely outside a crucible to generate a magnetic field in the crucible; and pulling upwards to grow a monocrystalline in an asymmetric magnetic field generated by the first current and the second current in the crucible.