A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

A nanopowder continuous production device for improving nanopowder collection efficiency is proposed. In one aspect, the device includes a reaction chamber evaporating a raw material using a plasma electrode and a crucible, and a raw material supplier connected to a first side of the reaction chamber and supplying the raw material to the reaction chamber. The device may also include a conveying film moving along a closed loop while capturing and conveying evaporated raw material or crystallized nanopowder at an upper portion in the reaction chamber, and a collector connected to a second side of the reaction chamber and collecting the nanopowder conveyed by the conveying film. The collector may include a first capturer having a scrapper disposed at an end of the conveying film and tensioners elastically supporting the scrapper, and a first side of the scrapper is in close contact with the conveying film.

A nanopowder continuous production device for improving nanopowder collection efficiency is proposed. In one aspect, the device includes a reaction chamber evaporating a raw material using a plasma electrode and a crucible, and a raw material supplier connected to a first side of the reaction chamber and supplying the raw material to the reaction chamber. The device may also include a conveying film moving along a closed loop while capturing and conveying evaporated raw material or crystallized nanopowder at an upper portion in the reaction chamber, and a collector connected to a second side of the reaction chamber and collecting the nanopowder conveyed by the conveying film. The collector may include a first capturer having a scrapper disposed at an end of the conveying film and tensioners elastically supporting the scrapper, and a first side of the scrapper is in close contact with the conveying film.

A method and apparatus for manufacturing an SiC single crystal includes a graphite crucible for receiving an SiC solution with first and second induction heating coils wound around it. The first induction heating coil is located higher than the surface of the SiC solution. The second induction heating coil is located lower than the first induction heating coil. A power supply supplies a first alternating current to the first induction heating coil and supplies, to the second induction heating coil, a second alternating current having the same frequency as the first alternating current and flowing in the direction opposite to that of the first alternating current. The distance between the surface of the SiC solution and the position in the portion of the side wall of the crucible in contact with the SiC solution with the strength of a magnetic field at its maximum satisfies a predetermined equation.

A method for manufacturing a silicon single crystal according to a Czochralski method to manufacture an N-type silicon single crystal, including the steps of: seeding to bring a seed crystal into contact with a silicon melt in a crucible and thereafter, necking to pull the seed crystal to narrow a diameter thereof, wherein a dopant concentration in the silicon melt is predicted by a difference between a temperature at the seeding and a temperature at the necking, and resistivity of the single crystal to be pulled is controlled on the basis of the predicted dopant concentration in the silicon melt. A method for manufacturing a silicon single crystal can efficiently manufacture a silicon single crystal with a desired resistivity.

A method for manufacturing a silicon single crystal according to a Czochralski method to manufacture an N-type silicon single crystal, including the steps of: seeding to bring a seed crystal into contact with a silicon melt in a crucible and thereafter, necking to pull the seed crystal to narrow a diameter thereof, wherein a dopant concentration in the silicon melt is predicted by a difference between a temperature at the seeding and a temperature at the necking, and resistivity of the single crystal to be pulled is controlled on the basis of the predicted dopant concentration in the silicon melt. A method for manufacturing a silicon single crystal can efficiently manufacture a silicon single crystal with a desired resistivity.

This invention provides a method for growing monocrystalline silicon by applying Czochralski method comprising forming a melt of silicon-containing materials in a crucible and pulling the melt for monocrystalline silicon growth, which is characterized by, the silicon-containing materials comprising a deuterium-implanted nitride-deposited silicon and a monocrystalline silicon, introducing a gas containing argon during formation of the melt, and, applying a magnetic field during the pulling step. This invention also provides a method for producing a wafer based on the above monocrystalline silicon.

This invention provides a method for growing monocrystalline silicon by applying Czochralski method comprising forming a melt of silicon-containing materials in a crucible and pulling the melt for monocrystalline silicon growth, which is characterized by, the silicon-containing materials comprising a deuterium-implanted nitride-deposited silicon and a monocrystalline silicon, introducing a gas containing argon during formation of the melt, and, applying a magnetic field during the pulling step. This invention also provides a method for producing a wafer based on the above monocrystalline silicon.

A single crystal diamond material comprising: neutral nitrogen-vacancy defects (NV.sup.0); negatively charged nitrogen-vacancy defects (NV.sup.−); and single substitutional nitrogen defects (N.sub.s) which transfer their charge to the neutral nitrogen-vacancy defects (NV.sup.0) to convert them into the negatively charged nitrogen-vacancy defects (NV), characterized in that the single crystal diamond material has a magnetometry figure of merit (FOM) of at least 2, wherein the magnetometry figure of merit is defined by (I) where R is a ratio of concentrations of negatively charged nitrogen-vacancy defects to neutral nitrogen-vacancy defects ([NV.sup.−]/[NV.sup.0]), [NV.sup.−] is the concentration of negatively charged nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, [NV0] is a concentration of neutral nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, and T.sub.2′ is a decoherence time of the NV.sup.− defects, where T.sub.2′ is T.sub.2* for DC magnetometry or T.sub.2 for AC magnetometry.

A single crystal diamond material comprising: neutral nitrogen-vacancy defects (NV.sup.0); negatively charged nitrogen-vacancy defects (NV.sup.−); and single substitutional nitrogen defects (N.sub.s) which transfer their charge to the neutral nitrogen-vacancy defects (NV.sup.0) to convert them into the negatively charged nitrogen-vacancy defects (NV), characterized in that the single crystal diamond material has a magnetometry figure of merit (FOM) of at least 2, wherein the magnetometry figure of merit is defined by (I) where R is a ratio of concentrations of negatively charged nitrogen-vacancy defects to neutral nitrogen-vacancy defects ([NV.sup.−]/[NV.sup.0]), [NV.sup.−] is the concentration of negatively charged nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, [NV0] is a concentration of neutral nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, and T.sub.2′ is a decoherence time of the NV.sup.− defects, where T.sub.2′ is T.sub.2* for DC magnetometry or T.sub.2 for AC magnetometry.