A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.

A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.

A crystal growth method and a crystal growth apparatus are disclosed in the present application. The crystal growth method comprises maintaining rotating of a crucible and meanwhile applying a horizontal magnetic field to silicon melt in the crucible during crystal growth. As and/or after changing magnetic field strength of the horizontal magnetic field, temperature fluctuation may easily occur at a solid-liquid interface of an ingot and the silicon melt. Through changing crucible rotating speed to change forced convection of the silicon melt, the temperature fluctuation at solid-liquid interface, caused by the changing of the magnetic field strength, may be rapidly reduced to stabilize diameter of the ingot.

A crystal growth method and a crystal growth apparatus are disclosed in the present application. The crystal growth method comprises maintaining rotating of a crucible and meanwhile applying a horizontal magnetic field to silicon melt in the crucible during crystal growth. As and/or after changing magnetic field strength of the horizontal magnetic field, temperature fluctuation may easily occur at a solid-liquid interface of an ingot and the silicon melt. Through changing crucible rotating speed to change forced convection of the silicon melt, the temperature fluctuation at solid-liquid interface, caused by the changing of the magnetic field strength, may be rapidly reduced to stabilize diameter of the ingot.

Electromagnetic waves are uniformly distributed on the light-receiving surface side by taking advantage of their property of being easily concentrated in sharp parts, and the front area (S.sub.A) on the emission surface side is made larger than the back area (S.sub.B) on the light-receiving surface side (S.sub.A/S.sub.B>1), thereby forming a more moderate electric field region. A reduced gold fine particle group (average particle size: 20 nm) was self-assembled on a transparent polyester resin film and half-submerged and fixed. This base material was repeatedly immersed in an electroless gold plating solution so that gold particles were deposited on the gold fine particles. 10 microliters of a protein solution was added dropwise to this nanostructured substrate, and crystallized by a hanging drop vapor diffusion method.

Electromagnetic waves are uniformly distributed on the light-receiving surface side by taking advantage of their property of being easily concentrated in sharp parts, and the front area (S.sub.A) on the emission surface side is made larger than the back area (S.sub.B) on the light-receiving surface side (S.sub.A/S.sub.B>1), thereby forming a more moderate electric field region. A reduced gold fine particle group (average particle size: 20 nm) was self-assembled on a transparent polyester resin film and half-submerged and fixed. This base material was repeatedly immersed in an electroless gold plating solution so that gold particles were deposited on the gold fine particles. 10 microliters of a protein solution was added dropwise to this nanostructured substrate, and crystallized by a hanging drop vapor diffusion method.

A device including a templating structure and a magnetic layer on the templating structure is described. The templating structure includes D and E. A ratio of D to E is represented by D.sub.1-xE.sub.x, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. Further, E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir, D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. The magnetic layer includes at least one of a Heusler compound and an L1.sub.0 compound, the magnetic layer being in contact with the templating structure.

The present disclosure discloses a shell mold chamber, a foundry furnace and a method for casting single crystal, fine crystal and non-crystal, which employ the technique of asynchronous-curving supercooling, and belongs to the technical field of precise casting apparatuses. Such a three-function foundry furnace includes a heating coil winding, a first thermal-shield assembly, a first superconducting coil, a second thermal-shield assembly and a second superconducting coil; and the first superconducting coil is provided at an inside of the first thermal-shield assembly, and the second superconducting coil is provided at an inside of the second thermal-shield assembly; and directions of a magnetic field generated by the first superconducting coil and a magnetic field generated by the second superconducting coil are opposite; and the first superconducting coil and the heating coil winding form a forward-directional static-magnetic-field heating zone, and the second superconducting coil forms a reverse-directional static-magnetic-field zone.

The present disclosure discloses a shell mold chamber, a foundry furnace and a method for casting single crystal, fine crystal and non-crystal, which employ the technique of asynchronous-curving supercooling, and belongs to the technical field of precise casting apparatuses. Such a three-function foundry furnace includes a heating coil winding, a first thermal-shield assembly, a first superconducting coil, a second thermal-shield assembly and a second superconducting coil; and the first superconducting coil is provided at an inside of the first thermal-shield assembly, and the second superconducting coil is provided at an inside of the second thermal-shield assembly; and directions of a magnetic field generated by the first superconducting coil and a magnetic field generated by the second superconducting coil are opposite; and the first superconducting coil and the heating coil winding form a forward-directional static-magnetic-field heating zone, and the second superconducting coil forms a reverse-directional static-magnetic-field zone.

A method of producing periodic polarization inversion structures requires the provision of first electrode piece part-arrays, each having electrode piece parts on a first main face of a ferroelectric crystal substrate. A voltage is applied on the first electrode piece part-arrays to form first periodic polarization inversion structures. Second electrode piece part-arrays are provided, each having electrode piece parts between the adjacent plural first periodic polarization inversion structures. A voltage is applied on the second electrode piece part-arrays to form second polarization inversion structures.