Methods for producing single crystal silicon wafers for use in insulated gate bipolar transistors are disclosed. The methods may involve determining the radial profile of a ratio between (i) a growth velocity, v, and (ii) an axial temperature gradient, G for an ingot with relatively low oxygen. Based on the radial v/G profile, a nitrogen concentration which widens the v/G window to produce Perfect Silicon free of COP and gate oxide failures may be selected.

The present invention relates to a novel process for the preparation of printable, high-viscosity oxide media, and to the use thereof in the production of solar cells.

The present invention relates to a novel process for the preparation of printable, high-viscosity oxide media, and to the use thereof in the production of solar cells.

The present invention relates to a novel printable boron doping paste in the form of a hybrid gel based on precursors of inorganic oxides, preferably of silicon dioxide, aluminium oxide and boron oxide, in the presence of organic polymer particles, where the pastes according to the invention can be used in a simplified process for the production of solar cells, where the hybrid gel according to the invention functions both as doping medium and as diffusion barrier.

The present invention relates to a novel printable boron doping paste in the form of a hybrid gel based on precursors of inorganic oxides, preferably of silicon dioxide, aluminium oxide and boron oxide, in the presence of organic polymer particles, where the pastes according to the invention can be used in a simplified process for the production of solar cells, where the hybrid gel according to the invention functions both as doping medium and as diffusion barrier.

A system and method for providing support to semiconductor wafer is provided. An embodiment comprises introducing a vacancy enhancing material during the formation of a semiconductor ingot prior to the semiconductor wafer being separated from the semiconductor ingot. The vacancy enhancing material forms vacancies at a high density within the semiconductor ingot, and the vacancies form bulk micro defects within the semiconductor wafer during high temperature processes such as annealing. These bulk micro defects help to provide support and strengthen the semiconductor wafer during subsequent processing and helps to reduce or eliminate a fingerprint overlay that may otherwise occur.

A system and method for providing support to semiconductor wafer is provided. An embodiment comprises introducing a vacancy enhancing material during the formation of a semiconductor ingot prior to the semiconductor wafer being separated from the semiconductor ingot. The vacancy enhancing material forms vacancies at a high density within the semiconductor ingot, and the vacancies form bulk micro defects within the semiconductor wafer during high temperature processes such as annealing. These bulk micro defects help to provide support and strengthen the semiconductor wafer during subsequent processing and helps to reduce or eliminate a fingerprint overlay that may otherwise occur.

A silicon single crystal wafer is provided. The silicon single crystal wafer includes an IDP which is divided into an NiG region and an NIDP region, wherein the IDP region is a region where a Cu based defect is not detected, the NiG region is a region where an Ni based defect is detected and the NIPD region is a region where an Ni based defect is not detected.

A silicon single crystal wafer is provided. The silicon single crystal wafer includes an IDP which is divided into an NiG region and an NIDP region, wherein the IDP region is a region where a Cu based defect is not detected, the NiG region is a region where an Ni based defect is detected and the NIPD region is a region where an Ni based defect is not detected.

The present invention relates to a novel printable paste in the form of a hybrid gel based on precursors of inorganic oxides which can be used in a simplified process for the production of solar cells, where the hybrid gel according to the invention functions both as doping medium and also as diffusion barrier.