The invention relates to a method for separating at least one solid-state layer (4) from at least one solid (1). The method according to the invention includes the steps of: producing a plurality of modifications (9) by means of laser beams in the interior of the solid (1) in order to form a separation plane (8); producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid (1), the exposed surface (5) being part of the solid-state layer (4) to be separated; introducing an external force into the solid (1) in order to create stresses in the solid (1), the external force being so great that the stresses cause a crack to propagate along the separation plane (8), wherein the modifications for forming the separation plane (8) are produced before the composite structure is produced.

A method of thermally processing a material with a thermal processing system includes providing a material for treating in an in-line thermal process to a heating system, providing a force to the material at a portion of the material configured to be heated by the heating system, adjusting the heating system to a specified temperature value, and heating the portion of the material to the specified temperature value while the portion of the material is under the force to change a magnetic property in the portion of the material. The heating system is moveable from a first position that is away from a path of the material through the in-line thermal process to a second position in which the heating system is configured to heat the portion of the material to the specified temperature value. The heating system can include induction-based heating.

A method of thermally processing a material with a thermal processing system includes providing a material for treating in an in-line thermal process to a heating system, providing a force to the material at a portion of the material configured to be heated by the heating system, adjusting the heating system to a specified temperature value, and heating the portion of the material to the specified temperature value while the portion of the material is under the force to change a magnetic property in the portion of the material. The heating system is moveable from a first position that is away from a path of the material through the in-line thermal process to a second position in which the heating system is configured to heat the portion of the material to the specified temperature value. The heating system can include induction-based heating.

An apparatus for processing a plurality of semiconductor wafers, the apparatus including a spallation chamber, a neutron producing material mounted in the spallation chamber, a neutron moderator, and an irradiation chamber coupled to the spallation chamber, wherein the neutron moderator is disposed between the spallation chamber and the irradiation chamber, wherein the irradiation chamber is configured to accommodate the plurality of semiconductor wafers, wherein each of the plurality of semiconductor wafers has a first surface and a second surface opposite the first surface, wherein the plurality of semiconductor wafers are positioned so that a first surface of one semiconductor wafer faces a second surface of another semiconductor wafer.

An apparatus for processing a plurality of semiconductor wafers, the apparatus including a spallation chamber, a neutron producing material mounted in the spallation chamber, a neutron moderator, and an irradiation chamber coupled to the spallation chamber, wherein the neutron moderator is disposed between the spallation chamber and the irradiation chamber, wherein the irradiation chamber is configured to accommodate the plurality of semiconductor wafers, wherein each of the plurality of semiconductor wafers has a first surface and a second surface opposite the first surface, wherein the plurality of semiconductor wafers are positioned so that a first surface of one semiconductor wafer faces a second surface of another semiconductor wafer.

In various embodiments, a method of processing one or more semiconductor wafers is provided. The method includes positioning the one or more semiconductor wafers in an irradiation chamber, generating a neutron flux in a spallation chamber coupled to the irradiation chamber, moderating the neutron flux to produce a thermal neutron flux, and exposing the one or more semiconductor wafers to the thermal neutron flux to thereby induce the creation of dopant atoms in the one or more semiconductor wafers.

In various embodiments, a method of processing one or more semiconductor wafers is provided. The method includes positioning the one or more semiconductor wafers in an irradiation chamber, generating a neutron flux in a spallation chamber coupled to the irradiation chamber, moderating the neutron flux to produce a thermal neutron flux, and exposing the one or more semiconductor wafers to the thermal neutron flux to thereby induce the creation of dopant atoms in the one or more semiconductor wafers.

The present invention relates to a fluorescent nanodiamond preparing method including a first operation of preparing nanodiamonds having an average particle diameter of 10 nm or less, a second operation of implanting plasma ions into the nanodiamonds, a third operation of heat-treating the nanodiamonds implanted with the plasma ions under a vacuum or inert gas atmosphere, a fourth operation of oxygen treatment of the heat-treated nanodiamonds under a gas atmosphere including oxygen to oxidize the surfaces of the nanodiamonds, a fifth operation of acid-treating the oxygen-treated nanodiamonds, a sixth operation of centrifuging and cleaning the acid-treated nanodiamonds, and a seventh operation of drying the cleaned nanodiamonds, wherein, in the second operation, the plasma ions are implanted at an incident ion dose of 10.sup.13 ions/cm.sup.2 or more and 10.sup.20 ions/cm.sup.2 or less.

The present invention relates to a fluorescent nanodiamond preparing method including a first operation of preparing nanodiamonds having an average particle diameter of 10 nm or less, a second operation of implanting plasma ions into the nanodiamonds, a third operation of heat-treating the nanodiamonds implanted with the plasma ions under a vacuum or inert gas atmosphere, a fourth operation of oxygen treatment of the heat-treated nanodiamonds under a gas atmosphere including oxygen to oxidize the surfaces of the nanodiamonds, a fifth operation of acid-treating the oxygen-treated nanodiamonds, a sixth operation of centrifuging and cleaning the acid-treated nanodiamonds, and a seventh operation of drying the cleaned nanodiamonds, wherein, in the second operation, the plasma ions are implanted at an incident ion dose of 10.sup.13 ions/cm.sup.2 or more and 10.sup.20 ions/cm.sup.2 or less.

The structures of base semiconductor materials such as Si are modified by the use of isotope transmutation alloying. A radioisotope such as Si.sup.31 is added into a base semiconductor material such as Si, and the radioisotope is transformed to a transmuted form within the crystal lattice structure of the base semiconductor material. A master alloy comprising a relatively large amount of radioisotope such as Si.sup.31 may initially be made, followed by introduction of the master alloy into the base semiconductor material. When Si.sup.31 is used as the radioisotope, it may be transmuted into P.sup.31 within an Si crystal lattice structure. Metastable semiconductor materials doped with otherwise insoluble amounts of selected dopants are produced as a result of the transmutation process.