The present disclosure concerns core-shell nanoparticles, each comprising a core comprising Nb and NbS.sub.2; preferably NbS.sub.2 and a shell of Formula NbS.sub.xO.sub.y.Math.zH.sub.2O, wherein x is a number from 0 to 5; y is a number from 0 to 3; and z is a number from 0 to 10. The present disclosure also concerns a method of synthesising core-shell nanoparticles.

A processing method for a silicon carbide single crystal substrate whereby it is possible to perform thick film processing of a desired surface of a SiC single crystal substrate in a short time under mild conditions such as room temperature, and a silicon carbide single crystal substrate processing system that can be applied to the processing method. The processing method for a silicon carbide single crystal substrate includes providing a silicon carbide single crystal substrate having a silicon carbide semiconductor layer epitaxially grown on a first main surface; bringing the first main surface into contact with an electrolyte solution containing fluorine anions while applying a voltage to the silicon carbide single crystal substrate as an anode, performing anodization, thereby forming a film containing oxygen on the first main surface; and removing the film by dry etching, ashing, or CMP.

Systems, methods and apparatus are provided for an array of vertically stacked memory cells having horizontally oriented access devices and storage nodes. The horizontally oriented access devices having a first source/drain regions and a second source/drain regions separated by channel regions. Gates at the channel regions formed fully around every surface of the channel region as gate-all-around (GAA) structures separated from channel regions by gate dielectrics. The memory cells have horizontally oriented storage nodes connected to the second source/drain regions and digit lines connected to the first source/drain regions.

A method can include co-depositing Germanium and Gallium on a Germanium substrate to hyperdope Germanium at room temperature. The method can include depositing Silicon on the Germanium and Gallium to either alloy or cap the Germanium and Gallium. The hyperdoped Germanium can have superconductivity properties.

A silicon carbide single crystal substrate processing method by which the thickening of a desired surface of a SiC single crystal substrate can be achieved in a short time under mild conditions such as room temperature; and a silicon carbide single crystal substrate processing system applicable to the processing method. The silicon carbide single crystal substrate processing method includes performing anodic oxidation, in which a voltage is applied using the silicon carbide single crystal substrate as an anode while at least one main surface of the silicon carbide single crystal substrate is brought into contact with an electrolyte solution that does not contain fluorine anions, to thereby form an oxide film on the main surface.

A composite that includes a gallium nitride layer; an intermediate layer that is formed on a surface of the gallium nitride layer and contains carbon, gallium, and oxygen; and a diamond layer that is joined to the surface of the gallium nitride layer through the intermediate layer.

A particle manufacturing method is disclosed. A particle manufacturing method according to one aspect of the present disclosure as a method of forming a spherical particle may include forming a structure for forming a structure of a protruding shape with a material composing of the particle on a first substrate, disposing substrates for disposing the first substrate such that the structure faces downward and disposing a second substrate facing the first substrate below the first substrate, forming a particle for heating and diffusing the structure of the first substrate to from a spherical particle from the diffused material of the structure, and collecting a particle for collecting particles by landing the spherical particles falling from the first substrate on the second substrate.

A preparation method of an aluminum nitride (AlN) composite structure based on a two-dimensional (2D) crystal transition layer is provided. The preparation method includes: transferring the 2D crystal transition layer on a first periodic groove of an epitaxial substrate; forming a second periodic groove staggered with the first periodic groove on the 2D crystal transition layer; depositing a supporting protective layer; depositing a functional layer of a required AlN-based material; and removing the 2D crystal transition layer through thermal oxidation to obtain a semi-suspended AlN composite structure. The preparation method has low difficulty and is suitable for large-scale industrial production. Design windows of the periodic grooves and the AlN functional layer are large and can meet the material requirements of deep ultraviolet light-emitting diodes (DUV-LEDs) and radio frequency (RF) electronic devices for different purposes, resulting in a wide application range.