A single crystal particle powder having a crystal structure of TbCu.sub.7-type of the present invention is represented by the general formula:

[Chemical Formula 1]

(R.sub.1-zM.sub.z)T.sub.x  (1)

or the general formula:

[Chemical Formula 2]

(R.sub.1-zM.sub.z)T.sub.xN.sub.y  (2)

and has a crystal structure of TbCu.sub.7-type,
wherein R is at least one element selected from the group consisting of Sm and Nd, T is at least one element selected from the group consisting of Fe and Co, x is 7.0≤x≤10.0, y is 1.0≤y≤2.0, and z is 0.0≤z≤0.3.

A solid ion conductive material can include a complex metal halide. The complex metal halide can include at least one alkali metal element. In an embodiment, the solid ion conductive material including the complex metal halide can be a single crystal. In another embodiment, the ion conductive material including the complex metal halide can be a crystalline material having a particular crystallographic orientation. A solid electrolyte can include the ion conductive material including the complex metal halide.

An insert fixture for use in the manufacture of a single crystal component by a hot isostatic pressing process. The insert fixture comprising: at least a lower plate separated from an upper plate by interconnecting members. The upper plate comprises at least a slot for the insertion of the single crystal component. The lower plate features a related engagement feature for engaging with the single crystal component. The insert fixture may be cast from a ceramic material. The insert fixture may be cast from an alumina ceramic or molybdenum alloy. The interconnecting members may be made from a molybdenum alloy.

An insert fixture for use in the manufacture of a single crystal component by a hot isostatic pressing process. The insert fixture comprising: at least a lower plate separated from an upper plate by interconnecting members. The upper plate comprises at least a slot for the insertion of the single crystal component. The lower plate features a related engagement feature for engaging with the single crystal component. The insert fixture may be cast from a ceramic material. The insert fixture may be cast from an alumina ceramic or molybdenum alloy. The interconnecting members may be made from a molybdenum alloy.

A method for forming a silicon carbide material with a plurality of negatively charged silicon mono-vacancy defects includes irradiating a silicon carbide sample, annealing the irradiated silicon carbide sample in an annealing operation, and quenching the annealed silicon carbide sample. Quenching may include heating the annealed silicon carbide sample to a maximum temperature and quenching the annealed silicon carbide sample to form the silicon carbide sample with the plurality of negatively charged silicon mono-vacancy defects.

A method for forming a silicon carbide material with a plurality of negatively charged silicon mono-vacancy defects includes irradiating a silicon carbide sample, annealing the irradiated silicon carbide sample in an annealing operation, and quenching the annealed silicon carbide sample. Quenching may include heating the annealed silicon carbide sample to a maximum temperature and quenching the annealed silicon carbide sample to form the silicon carbide sample with the plurality of negatively charged silicon mono-vacancy defects.

This disclosure provides an apparatus to manipulate the crystal morphology of a powder to improve the flow of a powder from a vessel and/or flowability of a powder in order to achieve stable fluidization of the powder within a vessel.

This disclosure provides an apparatus to manipulate the crystal morphology of a powder to improve the flow of a powder from a vessel and/or flowability of a powder in order to achieve stable fluidization of the powder within a vessel.

A semiconductor single-crystal silicon, is produced from a silicon substrate wafer containing interstitial oxygen in a concentration of more than 5 × 10.sup.16 AT/cm.sup.3 (new ASTM) by an RTA treatment of the wafer in a first heat treatment at a first temperature in a temperature range of not less than 1200° C. and not more than 1260° C. for a period of not less than 5 s and not more than 30 s, where the front side of the substrate wafer is exposed to an atmosphere containing argon; a second heat treatment at a second temperature in a temperature range of not less than 1150° C. and not more than 1190° C. for a period of not less than 15 s and not more than 20 s, where the front side of the wafer is exposed to an argon and ammonia, atmosphere, and a third heat treatment at a third temperature in a temperature range of not less than 1160° C. and not more than 1190° C. for a period of not less than 20 s and not more than 30 s, where the front side of the wafer is exposed to an atmosphere containing argon.

A semiconductor single-crystal silicon, is produced from a silicon substrate wafer containing interstitial oxygen in a concentration of more than 5 × 10.sup.16 AT/cm.sup.3 (new ASTM) by an RTA treatment of the wafer in a first heat treatment at a first temperature in a temperature range of not less than 1200° C. and not more than 1260° C. for a period of not less than 5 s and not more than 30 s, where the front side of the substrate wafer is exposed to an atmosphere containing argon; a second heat treatment at a second temperature in a temperature range of not less than 1150° C. and not more than 1190° C. for a period of not less than 15 s and not more than 20 s, where the front side of the wafer is exposed to an argon and ammonia, atmosphere, and a third heat treatment at a third temperature in a temperature range of not less than 1160° C. and not more than 1190° C. for a period of not less than 20 s and not more than 30 s, where the front side of the wafer is exposed to an atmosphere containing argon.