An insert fixture has a base, a plurality of mounting brackets, and a plurality of separators. The plurality of separators extends vertically from the base and includes a plurality of grid portions extending the length of the insert fixture and a plurality of divider portions, which connect to the plurality of grid portions to form a plurality of individual component holders around one of the plurality of mounting brackets. Each individual component holder has two separated grid portion sections positioned on either side of the bracket. These grid portions have two divider portions which are also separated and positioned either side of the bracket at an angle relative to the two grid portions. The individual component holder forms a cell around the mounting bracket. The insert fixture may be constructed from a molybdenum alloy, lanthanum oxide and/or titanium zirconium molybdenum.

The present invention relates to a method for reducing structural damage to the surface of monocrystalline aluminium-nitride substrates, according to which the substrate undergoes thermal treatment in a crucible in an autoclave, during which treatment the aluminum-nitride substrate is sublimated in the damaged regions of the surface of the substrate and is removed. The method is used to prepare the surface of monocrystalline aluminium-nitride (AlN), in particular the aim of the invention is to eliminate, or at least significantly reduce near-surface structural damage to the monocrystalline material caused by mechanical processing. The invention also relates to aluminium-nitride substrates that are treated in this way.

The present invention relates to a method for reducing structural damage to the surface of monocrystalline aluminium-nitride substrates, according to which the substrate undergoes thermal treatment in a crucible in an autoclave, during which treatment the aluminum-nitride substrate is sublimated in the damaged regions of the surface of the substrate and is removed. The method is used to prepare the surface of monocrystalline aluminium-nitride (AlN), in particular the aim of the invention is to eliminate, or at least significantly reduce near-surface structural damage to the monocrystalline material caused by mechanical processing. The invention also relates to aluminium-nitride substrates that are treated in this way.

A semiconductor substrate includes a first material layer made of a first material and including a plurality of protrusions, and a second material layer made of a second material different from the first material, filling spaces between the plurality of protrusions, and covering the plurality of protrusions. Each of the protrusions includes a tip and a plurality of facets converging at the tip, and adjacent facets of adjacent protrusions are in contact with each other,

A semiconductor substrate includes a first material layer made of a first material and including a plurality of protrusions, and a second material layer made of a second material different from the first material, filling spaces between the plurality of protrusions, and covering the plurality of protrusions. Each of the protrusions includes a tip and a plurality of facets converging at the tip, and adjacent facets of adjacent protrusions are in contact with each other,

A semiconductor silicon wafer manufacturing method is provided, where P aggregate defects and SF in an epitaxial layer can be suppressed. A silicon wafer substrate cut from a monocrystal ingot is doped with phosphorus and has a resistivity of 1.05 mΩ.Math.cm or less and a concentration of solid-solution oxygen of 0.9×10.sup.18 atoms/cm.sup.3. The method includes steps of mirror-polishing substrates and heat treatment, where after the mirror-polishing step, the substrate is kept at a temperature from 700° C. to 850° for 30 to 120 minutes, then after the temperature rise, kept at a temperature from 100° C. to 1250° for 30 to 120 minutes, and after cooling, kept at a temperature from 700° C. to 450° C. for less than 10 minutes as an experience time. The heat treatment step is performed in a mixture gas of hydrogen and argon. The method includes an epitaxial layer deposition step to a thickness of 1.3 μm to 10.0 μm.

A semiconductor silicon wafer manufacturing method is provided, where P aggregate defects and SF in an epitaxial layer can be suppressed. A silicon wafer substrate cut from a monocrystal ingot is doped with phosphorus and has a resistivity of 1.05 mΩ.Math.cm or less and a concentration of solid-solution oxygen of 0.9×10.sup.18 atoms/cm.sup.3. The method includes steps of mirror-polishing substrates and heat treatment, where after the mirror-polishing step, the substrate is kept at a temperature from 700° C. to 850° for 30 to 120 minutes, then after the temperature rise, kept at a temperature from 100° C. to 1250° for 30 to 120 minutes, and after cooling, kept at a temperature from 700° C. to 450° C. for less than 10 minutes as an experience time. The heat treatment step is performed in a mixture gas of hydrogen and argon. The method includes an epitaxial layer deposition step to a thickness of 1.3 μm to 10.0 μm.

A method generates at least one deterministic F-center in a diamond layer. By implanting a dopant in the diamond layer and incorporating at least one foreign atom in the diamond layer by low-energy bombardment for the formation of the F-center in a second step, conversion rates of greater than 70% can be achieved. This is a significant increase in relation to undoped diamond, in which the conversion rates are only around 6%. Via doping with a donor, such as phosphorous, oxygen or sulphur, a good conversion into negatively charged F-centers can be achieved, which are used for Qubit applications.

A method generates at least one deterministic F-center in a diamond layer. By implanting a dopant in the diamond layer and incorporating at least one foreign atom in the diamond layer by low-energy bombardment for the formation of the F-center in a second step, conversion rates of greater than 70% can be achieved. This is a significant increase in relation to undoped diamond, in which the conversion rates are only around 6%. Via doping with a donor, such as phosphorous, oxygen or sulphur, a good conversion into negatively charged F-centers can be achieved, which are used for Qubit applications.

A silicon carbide single crystal wafer and a preparation method therefor, a silicon carbide crystal and a preparation method therefor, and a semiconductor device. The surface of the silicon carbide single crystal wafer is such that an included angle between a normal direction and a c direction is 0-8 degrees, and aggregated dislocations on the silicon carbide single crystal wafer are less than 300/cm.sup.2; the aggregated dislocation is a dislocation aggregated condition in which the distance between the geometric centers of any two corrosion pits in the corrosion pits obtained after corrosion of melted KOH is less than 80 microns. Even if the dislocation density is relatively high, the aggregated dislocation density is relatively small, thereby increasing the yield of a silicon carbide-based devices.