Embodiments described herein relate generally to the large scale production of functionalized graphene. In some embodiments, a method for producing functionalized graphene includes combining a crystalline graphite with a first electrolyte solution that includes at least one of a metal hydroxide salt, an oxidizer, and a surfactant. The crystalline graphite is then milled in the presence of the first electrolyte solution for a first time period to produce a thinned intermediate material. The thinned intermediate material is combined with a second electrolyte solution that includes a strong oxidizer and at least one of a metal hydroxide salt, a weak oxidizer, and a surfactant. The thinned intermediate material is then milled in the presence of the second electrolyte solution for a second time period to produce functionalized graphene.

Embodiments described herein relate generally to the large scale production of functionalized graphene. In some embodiments, a method for producing functionalized graphene includes combining a crystalline graphite with a first electrolyte solution that includes at least one of a metal hydroxide salt, an oxidizer, and a surfactant. The crystalline graphite is then milled in the presence of the first electrolyte solution for a first time period to produce a thinned intermediate material. The thinned intermediate material is combined with a second electrolyte solution that includes a strong oxidizer and at least one of a metal hydroxide salt, a weak oxidizer, and a surfactant. The thinned intermediate material is then milled in the presence of the second electrolyte solution for a second time period to produce functionalized graphene.

The present invention discloses a high-resistivity single crystal zinc oxide (ZnO) wafer and a high-resistivity single crystal ZnO-based radiation detector, and preparation method and use thereof. The preparation method of the high-resistivity single crystal zinc oxide wafer is to place a single crystal ZnO wafer in a metal lithium electrochemical device for a constant-current discharge treatment, and then to place the single crystal ZnO wafer in a high-pressure oxygen atmosphere at 800 to 1000 C. and 10 to 30 atm for an annealing treatment for 20 to 28 hours. The preparation method of the radiation detector is to evaporate a metal electrode layer at both sides of the high-resistivity single crystal ZnO wafer, then to bond the wafer onto a circuit board, and to connect the wafer with the circuit board by a gold thread.

The present invention discloses a high-resistivity single crystal zinc oxide (ZnO) wafer and a high-resistivity single crystal ZnO-based radiation detector, and preparation method and use thereof. The preparation method of the high-resistivity single crystal zinc oxide wafer is to place a single crystal ZnO wafer in a metal lithium electrochemical device for a constant-current discharge treatment, and then to place the single crystal ZnO wafer in a high-pressure oxygen atmosphere at 800 to 1000 C. and 10 to 30 atm for an annealing treatment for 20 to 28 hours. The preparation method of the radiation detector is to evaporate a metal electrode layer at both sides of the high-resistivity single crystal ZnO wafer, then to bond the wafer onto a circuit board, and to connect the wafer with the circuit board by a gold thread.

Methods, apparatus, and systems for fabricating diffractive structures on gemstones for high optical performance are provided. In one aspect, a method includes obtaining a plurality of gemstone characteristics of a gemstone, determining that the gemstone exhibits each of the plurality of gemstone characteristics within a respective predetermined range, identifying a diffractive structure setting associated with a combination of the respective predetermined ranges for the plurality of gemstone characteristics, and fabricating diffractive structures on the gemstone according to the diffractive structure setting.

Provided are a protein crystal device and method for crystallizing protein capable of generating protein crystal without imparting a heat effect, a protein crystal-cutting device and method for cutting protein crystal capable of cutting protein crystal without imparting a heat effect on protein crystal, and bubble-jetting member and protein-adsorbing-bubble-jetting member used in said device. A bubble-jetting member is used in a protein crystal device to jet bubbles into a protein solution to thereby allow protein crystals to be obtained, the bubble-jetting member comprising: a core formed of a conductive material; a shell part formed of an insulating material, including an extended section extending from the tip of the core, and in which at least a portion closely adheres to the core to cover the core; and a gap having a bubble-jetting port, the gap being formed between the extended section and the tip of the core.

Provided are a protein crystal device and method for crystallizing protein capable of generating protein crystal without imparting a heat effect, a protein crystal-cutting device and method for cutting protein crystal capable of cutting protein crystal without imparting a heat effect on protein crystal, and bubble-jetting member and protein-adsorbing-bubble-jetting member used in said device. A bubble-jetting member is used in a protein crystal device to jet bubbles into a protein solution to thereby allow protein crystals to be obtained, the bubble-jetting member comprising: a core formed of a conductive material; a shell part formed of an insulating material, including an extended section extending from the tip of the core, and in which at least a portion closely adheres to the core to cover the core; and a gap having a bubble-jetting port, the gap being formed between the extended section and the tip of the core.

A method of fabricating fluorescent diamond particles, and diamond particles fabricated by the method. The method comprises mounting a diamond body on a heat sink, the diamond body comprising a plurality of diamond particles having a particle size of no more than 250 micrometres and bound together in the diamond body by a binder. The diamond body is irradiated to generate vacancy defects in the diamond particles. The binder is then removed to separate the diamond body into diamond particles.

A method of fabricating fluorescent diamond particles, and diamond particles fabricated by the method. The method comprises mounting a diamond body on a heat sink, the diamond body comprising a plurality of diamond particles having a particle size of no more than 250 micrometres and bound together in the diamond body by a binder. The diamond body is irradiated to generate vacancy defects in the diamond particles. The binder is then removed to separate the diamond body into diamond particles.

Process for treatment of a sapphire part with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where: the voltage for acceleration of the ions is between 10 kV and 100 kV; the implanted dose, expressed in ions/cm.sup.2, is between (510.sup.16)(M/14).sup.1/2 and 10.sup.17(M/14).sup.1/2, where M is the atomic mass of the ion; the rate of displacement V.sub.D, expressed in cm/s, is between 0.025(P/D) and 0.1(P/D), where P is the power of the beam, expressed in W (watts), and D is the diameter of the beam, expressed in cm (centimetres).

A part made of sapphire having a high transmittance and which is resistant to scratching is thus advantageously obtained.