Implementations of methods of thinning a semiconductor substrate may include: providing a semiconductor substrate having a first surface and a second surface opposing the first surface, the semiconductor substrate having a thickness between the first surface and the second surface. The method may further include inducing damage into a portion of the semiconductor substrate at a first depth into the thickness forming a first damage layer, inducing damage into a portion of the semiconductor substrate at a second depth into the thickness forming a second damage layer, and applying ultrasonic energy to the semiconductor substrate. The method may include separating the semiconductor substrate into three separate thinned portions across the thickness along the first damage layer and along the second damage layer.

Embodiments described herein relate generally to the large scale production of functionalized graphene. In some embodiments, a method for producing functionalized graphene includes combining a crystalline graphite with a first electrolyte solution that includes at least one of a metal hydroxide salt, an oxidizer, and a surfactant. The crystalline graphite is then milled in the presence of the first electrolyte solution for a first time period to produce a thinned intermediate material. The thinned intermediate material is combined with a second electrolyte solution that includes a strong oxidizer and at least one of a metal hydroxide salt, a weak oxidizer, and a surfactant. The thinned intermediate material is then milled in the presence of the second electrolyte solution for a second time period to produce functionalized graphene.

Embodiments described herein relate generally to the large scale production of functionalized graphene. In some embodiments, a method for producing functionalized graphene includes combining a crystalline graphite with a first electrolyte solution that includes at least one of a metal hydroxide salt, an oxidizer, and a surfactant. The crystalline graphite is then milled in the presence of the first electrolyte solution for a first time period to produce a thinned intermediate material. The thinned intermediate material is combined with a second electrolyte solution that includes a strong oxidizer and at least one of a metal hydroxide salt, a weak oxidizer, and a surfactant. The thinned intermediate material is then milled in the presence of the second electrolyte solution for a second time period to produce functionalized graphene.

A method for manufacturing substrate-transferred optical coatings, comprising: a) providing a first optical coating on a first host substrate as a base coating structure; b) providing a second optical coating on a second host substrate; c) bonding the optical coating of the base coating structure to the second optical coating, thereby obtaining one combined coating; d) detaching one of the first and the second host substrates from the combined coating; determining if the combined coating fulfills a predetermined condition; e) if the result of the determining step is negative, taking the combined coating together with the remaining host substrate as the base coating structure to be processed next and continuing with step b); f) if the result of the determining step is positive, providing an optical substrate and bonding the optical substrate to the combined coating; g) removing the other one of the first and the second host substrate.

A method for manufacturing substrate-transferred optical coatings, comprising: a) providing a first optical coating on a first host substrate as a base coating structure; b) providing a second optical coating on a second host substrate; c) bonding the optical coating of the base coating structure to the second optical coating, thereby obtaining one combined coating; d) detaching one of the first and the second host substrates from the combined coating; determining if the combined coating fulfills a predetermined condition; e) if the result of the determining step is negative, taking the combined coating together with the remaining host substrate as the base coating structure to be processed next and continuing with step b); f) if the result of the determining step is positive, providing an optical substrate and bonding the optical substrate to the combined coating; g) removing the other one of the first and the second host substrate.

A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.

A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.

Embodiments of this disclosure include apparatus, systems, and methods for fabricating monolayers. In one example, a method includes forming a multilayer film having a plurality of monolayers of a two-dimensional (2D) material on a growth substrate. The multilayer film has a first side proximate the growth substrate and a second side opposite the first side.

A method of creating thin wafers of single crystal silicon, sapphire and similar materials, wherein an ingot of single crystalline material, or a ribbon of single crystalline material is cleaved, in a plane parallel to a surface, with laser light focused to a line in the desired plane of cleavage, near the growing cleavage furrow. The light is of a wavelength that the material is transparent to, but for which the material has strong two- or three-photon absorption. Consequently the light is not appreciably absorbed until it reached the desired focal line. The light is presented in an extremely short pulse, which heats and expands the material at the line focus, before the heat can be dissipated. This expansion creates tangential stresses around the focal line. These stresses are designed to be precisely normal to the growing cleavage furrow. Therefore the stresses are able to induce cleavage in the desired plane, without inducing cleavage in other possible cleavage planes that may happen to intersect with the growing cleavage edge. In this way, extremely thin wafers and ribbon shaped wafers can be produced, with extremely high quality cleaved faces. Methods of initiating the cleavage furrow and separating the cleaved wafer from the rest of the crystal are also discussed.

Prescribed mathematical expressions are satisfied, where ν.sub.0 represents a wave number indicating a peak corresponding to a folded mode of a longitudinal optical branch of a Raman spectrum of silicon carbide having a polytype of 4H and having zero stress, ν.sub.max represents a maximum value of a wave number indicating a peak corresponding to a folded mode of a longitudinal optical branch of a Raman spectrum of a silicon carbide substrate in a region from a first main surface to a second main surface, ν.sub.max represents a minimum value of the wave number indicating the peak corresponding to the folded mode of the longitudinal optical branch of the Raman spectrum, and ν.sub.1 represents a wave number indicating a peak corresponding to a folded mode of a longitudinal optical branch of a Raman spectrum of the silicon carbide substrate at the first main surface.