C30B33/06

Lithium tantalate single crystal substrate, bonded substrate, manufacturing method of the bonded substrate, and surface acoustic wave device using the bonded substrate

[Object] It is an object of the present invention to provide a lithium tantalate single crystal substrate which undergoes only small warpage, is free from cracks and scratches, has better temperature non-dependence characteristics and a larger electromechanical coupling coefficient than a conventional Y-cut LiTaO.sub.3 substrate. [Means to solve the Problems] The lithium tantalate single crystal substrate of the present invention is a rotated Y-cut LiTaO.sub.3 single crystal substrate having a crystal orientation of 36° Y-49° Y cut characterized in that: the substrate is diffused with Li from its surface into its depth such that it has a Li concentration profile showing a difference in the Li concentration between the substrate surface and the depth of the substrate; and the substrate is treated with single polarization treatment so that the Li concentration is substantially uniform from the substrate surface to a depth which is equivalent to 5-15 times the wavelength of either a surface acoustic wave or a leaky surface acoustic wave propagating in the LiTaO.sub.3 substrate surface.

Carrier-assisted method for parting crystalline material along laser damage region

A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 μm thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

METHODS FOR CHARGE-TITRATING ASSEMBLY OF PARTIALLY METALLIZED NANOPARTICLES, AND METAMATERIALS PRODUCED THEREFROM
20210147226 · 2021-05-20 ·

Variations provide a metamaterial comprising a plurality of metamaterial repeat units containing a surface-patterned nanoparticle or microparticle that is coated with a metal in a surface pattern. The surface-patterned particle may include a dielectric material or a semiconductor material partially or fully coated with metal(s). In some embodiments, the surface-patterned particles are split ring resonators. Some variations provide a method of making a metamaterial, the method comprising: metallizing surfaces of particles, wherein particles are coated with metal(s) in a surface pattern; dispersing surface-patterned particles in a liquid solution at a starting pH; introducing a triggerable pH-control substance capable of generating an acid or base; and triggering the pH-control substance to generate an acid or base, thereby adjusting the solution pH to a titrated pH. The zeta potential is closer to zero at the titrated pH compared to the starting pH, causing the surface-patterned particles to assemble into a metamaterial.

Wafer production method

A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and subjecting the polymer layer to temperature conditions to generate mechanical stress in the solid body, including cooling of the polymer layer to a temperature below ambient temperature, the cooling taking place such that due to stresses a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

Diamond composite body, substrate, diamond, tool including diamond, and method for manufacturing diamond

Provided are a diamond composite body capable of shortening a separation time for separating a substrate and a diamond layer, the substrate, and a method for manufacturing a diamond, as well as a diamond obtained from the diamond composite body and a tool including the diamond. The diamond composite body includes a substrate including a diamond seed crystal and having grooves in a main surface, a diamond layer formed on the main surface of the substrate, and a non-diamond layer formed on a substrate side at a constant depth from an interface between the substrate and the diamond layer.

Diamond composite body, substrate, diamond, tool including diamond, and method for manufacturing diamond

Provided are a diamond composite body capable of shortening a separation time for separating a substrate and a diamond layer, the substrate, and a method for manufacturing a diamond, as well as a diamond obtained from the diamond composite body and a tool including the diamond. The diamond composite body includes a substrate including a diamond seed crystal and having grooves in a main surface, a diamond layer formed on the main surface of the substrate, and a non-diamond layer formed on a substrate side at a constant depth from an interface between the substrate and the diamond layer.

Diamond die

A diamond die includes a diamond provided with a hole for drawing a wire material, the diamond being a CVD single-crystal diamond, an axis of the hole being inclined relative to a normal direction of a crystal plane of the diamond.

METHOD FOR PRODUCING A MONOCRYSTALLINE LAYER OF AN LNO MATERIAL AND SUBSTRATE FOR EPITAXIAL GROWTH OF A MONOCRYSTALLINE LAYER OF AN LNO MATERIAL
20210095391 · 2021-04-01 ·

A process for producing a monocrystalline layer of LNO material comprises the transfer of a monocrystalline seed layer of YSZ material to a carrier substrate of silicon material followed by epitaxial growth of the monocrystalline layer of LNO material.

METHOD FOR PRODUCING A MONOCRYSTALLINE LAYER OF AN LNO MATERIAL AND SUBSTRATE FOR EPITAXIAL GROWTH OF A MONOCRYSTALLINE LAYER OF AN LNO MATERIAL
20210095391 · 2021-04-01 ·

A process for producing a monocrystalline layer of LNO material comprises the transfer of a monocrystalline seed layer of YSZ material to a carrier substrate of silicon material followed by epitaxial growth of the monocrystalline layer of LNO material.

Sapphire composite base material and method for producing the same

A sapphire composite base material including: an inorganic glass substrate, a polyvinyl butyral or silica intermediate film on the inorganic glass substrate, and a single crystal sapphire film on the intermediate film. There is also provided a method for producing a sapphire composite base material, including steps of: forming an ion-implanted layer inside the single crystal sapphire substrate; forming a polyvinyl butyral or silica intermediate film on at least one surface selected from the surface of the single crystal sapphire substrate before or after the ion implantation, and a surface of an inorganic glass substrate; bonding the ion-implanted surface of the single crystal sapphire substrate to the surface of the inorganic glass substrate via the intermediate film to obtain a bonded body; and transferring a single crystal sapphire film to the inorganic glass substrate via the intermediate film.