Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation.

A quartz glass crucible including bottom, curved, and straight body portions, where the quartz glass crucible includes an outer layer including opaque quartz glass containing bubbles, and an inner layer including transparent quartz glass, the outer layer fabricated from different types of raw material powder, the outer layer having regions sectioned by bubble content densities, and bubble content densities of two outer layer adjacent regions, when d.sub.a (pcs/mm.sup.3) is defined as content density of a region “a” having a greater content density, and d.sub.b (pcs/mm.sup.3) is defined as content density of a region “b” having a smaller content density, a difference D=(d.sub.a−d.sub.b)/d.sub.b between content densities of the two regions is 10% or more.

[Problems to be solved] Provided is a quartz glass crucible having high durability even at a high temperature during a single crystal pull-up step and capable of reducing a generation ratio of pinholes in a silicon single crystal.

[Means to solve the problems] A quartz glass crucible 1 includes: a quartz glass crucible body 10 having a cylindrical side wall portion 10a, a curved bottom portion 10b, and a corner portion 10c which has a larger curvature than that of the bottom portion 10b and connects the side wall portion 10a and the bottom portion 10b to each other; and an inner-surface coating film 13A which contains a crystallization accelerator and is formed on an inner surface 10i of the quartz glass crucible body 10, in which the inner surface 10i of the quartz glass crucible body 10 is under compressive stress.

A method for preparing a SiC ingot includes preparing a crucible assembly comprising a crucible body having an internal space, loading a raw material into the internal space of the crucible body and placing a plurality of SiC seed in the internal space of the crucible body at regular intervals spaced apart from the raw material, and growing the SiC ingot from the plurality of SiC seed by adjusting the internal space of the crucible body to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the plurality of SiC seed. A density of the crucible body may be 1.70 to 1.92 g/cm.sup.3.

A crucible includes an outer element and an inner element. The outer element includes a first portion that is horizontal at a bottom end of the crucible and a second portion that ascends radially outwardly from the bottom end of the crucible to a top end of the crucible at a first acute angle to a vertical axis. The inner element includes a conus with a cylinder at a base of the conus. The conus descends radially outwardly from the top end of the crucible to the bottom end of the crucible at a second acute angle to the vertical axis. The inner element includes a base portion of the cylinder attached to the first portion of the outer element using a sealant to form a hollow mold between an inner portion of the outer element and an outer portion of the inner element.

A crystal growth apparatus according to the present embodiment includes a crucible, a heater which is installed on an outward side of the crucible and surrounds the crucible, and a coil which is installed on an outward side of the heater and surrounds the heater, in which an inner surface of the heater on the crucible side includes a first region, and a second region which is further away from an outer side surface of the crucible than the first region is.

The present invention provides a semiconductor crystal growth apparatus, which comprises a furnace body, a crucible, a pulling device, a deflector, and a magnetic field applying device. The crucible is disposed inside the furnace body for containing silicon melt. The pulling device is disposed on the top of the furnace body for pulling a silicon ingot from the silicon melt. The deflector is in a barrel shape and is disposed in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot in a vertical direction and through the deflector. The magnetic field applying device is configured to apply a magnetic field to the silicon melt in the crucible, in which the distance between the bottom of the deflector and the liquid level of the silicon melt in the direction of the magnetic field is less than that between the bottom of the deflector and the silicon melt in the direction perpendicular to the direction of the magnetic field.

A silicon carbide single crystal manufacturing apparatus includes a crucible having a cylindrical shape and providing a hollow portion forming a reaction chamber, a pedestal disposed in the hollow portion of the crucible and having one circular surface on which a seed crystal for growing a silicon carbide single crystal is to be disposed, a gas supplying mechanism configured to supply a silicon carbide raw material gas for growing the silicon carbide single crystal on a surface of the seed crystal from below the pedestal, a heating device configured to heat and decompose the silicon carbide raw material gas, and a rotation mechanism configured to rotate the pedestal to cause the silicon carbide single crystal to grow while the seed crystal is rotated, and a center axis of the pedestal is eccentric from a rotation center of the pedestal.

Crystalline NH.sub.4Be.sub.2BO.sub.3F.sub.2 or Be.sub.2BO.sub.3F (abbreviated as BBF) has nonlinear optical effect, is not deliquescent in the air, is chemically stable. They can be used in a variety of nonlinear optical fields and will pioneer the nonlinear optical applications in the deep UV band.

The present invention provides a method including: a temperature raising step of raising a temperature in a crystal growing furnace with a silicon carbide raw material and a silicon carbide seed crystal arranged therein to a crystal growing temperature; a single crystal growing step of maintaining the crystal growing temperature and causing a silicon carbide single crystal to grow on the silicon carbide seed crystal; and a temperature lowering step of lowering the temperature in the crystal growing furnace from the crystal growing temperature to stop growth of the silicon carbide single crystal, in which the method further comprises, between the single crystal growing step and the temperature lowering step, a temperature lowering preparation step of maintaining the temperature in the crystal growing furnace at the crystal growing temperature and causing concentration of nitrogen gas in the crystal growing furnace to increase to be higher than concentration of nitrogen gas in the temperature raising step and in the single crystal growing step, and in which the concentration of the nitrogens gas in the crystal growing furnace in the temperature lowering step is higher than the concentration of the nitrogen gas in the temperature raising step and the single crystal growing step.