An object of this invention is to provide a crucible for growing a sapphire single crystal, which is optimized for providing a sapphire single crystal and is reusable. A crucible for growing a sapphire single crystal of this invention includes: a base material (3) containing molybdenum as a main component and having a crucible shape; and a coating layer (5) with which only an inner periphery of the base material (3) is coated and which is formed of tungsten and inevitable impurities, in which the coating layer (5) has a surface roughness Ra of 5 μm or more and 20 μm or less.

Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation.

Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation.

A destructive inspection method of a vitreous silica crucible for pulling a silicon single crystal evaluates a crack state of an inner surface of the vitreous silica crucible supported by a graphite susceptor when a load is instantaneously applied to at least one point on the inner surface via an automatic center punch while pushing the tip portion of the automatic center punch against the inner surface. The destructive inspection method can inspect the vitreous silica crucible under conditions as close to the actual conditions of use as possible.

A substrate mounting member according to the present invention is a member for mounting a SiC substrate for epitaxial growth, which includes a wafer plate including a SiC polycrystal, and a supporting plate configured to be placed on the wafer plate, include no SiC polycrystal and have a surface serving as a SiC substrate placing surface, the surface being on the side opposite to a surface in contact with the wafer plate, and in which a thickness h [mm] of the supporting plate satisfies an expression h.sup.4≦3pa.sup.4(1−v.sup.2){(5+v)/(1+v)}16E when a force applied to a unit area of the supporting plate by a self-weight of the supporting plate and by the SiC substrate is represented as p [N/mm.sup.2], a radius of the supporting plate as a [mm], a Poisson's ratio as v and a Young's modulus as E [MPa].

Roll forming is used for re-shaping an iridium crucible. The crucible is placed on a platen. The platen rotates the crucible while heat is applied by a plurality of torches. A plurality of rollers press on the rotating, heated crucible to re-shape. The roll forming allows for a greater number of repetitions of the re-shaping, increasing the number of uses per expensive re-fabrication of the crucible. The roll forming may provide more exact re-shaping.

The invention provides a growth method for preparing high-yield crystals, belongs to the technical field of single crystal growth. Auxiliary crucibles are arranged on a crucible according to different crystal types and according to the crystal orientation of crystal growth in the main crucible, the relationship between the crystal growth direction and twin crystal orientation. By controlling the angle between the auxiliary crucibles and the main crucible, the relative position between the auxiliary crucibles each other, the auxiliary crucibles realize correction on the crystal orientation of twins generated in the main crucible crystal growth process. The growth method for preparing the high-yield crystals provided by the invention has the following advantages: the crystal orientation change caused by twins is corrected through auxiliary crucibles additionally arranged on the main crucible, and the overall yield is improved for the growth process of the dislocation crystal with large probability; the crucible position can be customized according to the influence of twins on the crystal growth direction, suitable for various crystal preparation processes, improving the yield obviously, reducing the crystal processing difficulty, and improving the material utilization rate.

A nanopowder continuous production device for improving nanopowder collection efficiency is proposed. In one aspect, the device includes a reaction chamber evaporating a raw material using a plasma electrode and a crucible, and a raw material supplier connected to a first side of the reaction chamber and supplying the raw material to the reaction chamber. The device may also include a conveying film moving along a closed loop while capturing and conveying evaporated raw material or crystallized nanopowder at an upper portion in the reaction chamber, and a collector connected to a second side of the reaction chamber and collecting the nanopowder conveyed by the conveying film. The collector may include a first capturer having a scrapper disposed at an end of the conveying film and tensioners elastically supporting the scrapper, and a first side of the scrapper is in close contact with the conveying film.

A SiC single crystal manufacturing apparatus of the present invention includes a growth container having a growth space in which a SiC single crystal is grown in a first direction and a heat insulating material which covers the growth container and includes a plurality of units, and the plurality of units include a first unit and a second unit having at least a thermal conductivity different from that of the first unit, and the first unit includes a container made of at least one of graphite and a metal carbide and a filler filled into the container in a replaceable manner.

The present invention provides a heat-insulating shield member, wherein the heat-insulating shield member is arranged and used between a SiC source housing (3) and a substrate support (4) in a single crystal manufacturing apparatus (10), wherein the single crystal manufacturing apparatus (10) comprises a crystal growth container (2) and a heating member (5) arranged on an outer periphery of the crystal growth container (2), wherein the crystal growth container (2) includes the SiC source housing (3) disposed at a lower portion of the apparatus, and the substrate support (4) which is arranged above the SiC source housing (3) and supports a substrate (S) used for crystal growth so as to face the SiC source housing (3), and wherein the single crystal manufacturing apparatus (10) is configured to grow a single crystal (W) from a SiC source (M) on the substrate (S) by sublimating the SiC source (M) from the SiC source housing (3).