A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.

A tether for joining objects in space by centripetal force has a modular architecture. The modular architecture facilitates the deployment of the tether by facilitating its transport into space as unassembled modular components and its assembly in situ, after the components have been transported. The modular architecture also facilitates it repair, modification, and disassembly in situ. More particularly, the modular tether has design features that enable its assembly, repair, modification, and/or disassembly in situ while the modular tether remains under tension, i.e., while the modular tether continues to perform its function of joining two or more objects by the application of centripetal force. The modular architecture also enables new tether modalities, e.g., a tensile strength modality, a winch modality, a tension monitoring modality, a repair state modality, a situational awareness modality, and a temperature control modality.

A bellows system includes a first bellows segment having a first end and a second end, the first bellows segment configured to elastically compress and expand. A first plate is coupled to the second end of the first bellows segment and a first sleeve is concentric with the first bellows segment, the first bellows segment disposed within the first sleeve. A second bellows segment has a third end and a fourth end. The second bellows segment is configured to elastically compress and expand, and the third end of the second bellows segment is coupled to the first plate. A second sleeve is coupled to the first plate. The second sleeve is concentric with the second bellows segment and the first sleeve, and the second bellows segment is disposed within the second sleeve. The second sleeve is configured to travel within the first sleeve.

The embodiments of the present disclosure disclose a method and an apparatus for crystal growth. The method for crystal growth may include: placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth; executing a growth of a crystal based on the seed crystal and the target source material according to physical vapor transport; determining whether a preset condition is satisfied during the crystal growth process; and in response to determining that the preset condition is satisfied, replacing a sublimated target source material with a candidate source material. In the present disclosure, by replacing the sublimated target source material with the candidate source material, a crystal with large-size and high-quality can be grown.

In one embodiment, a substrate support assembly includes a susceptor for supporting a substrate, and a supporting transfer mechanism coupled to the susceptor, the supporting transfer mechanism having a surface for supporting a peripheral edge of the substrate, the supporting transfer mechanism being movable relative to an upper surface of the susceptor.

A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.

The embodiments of the present disclosure disclose a method and an apparatus for crystal growth. The method for crystal growth may include: placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth; executing a growth of a crystal based on the seed crystal and the target source material according to physical vapor transport; determining whether a preset condition is satisfied during the crystal growth process; and in response to determining that the preset condition is satisfied, replacing a sublimated target source material with a candidate source material. In the present disclosure, by replacing the sublimated target source material with the candidate source material, a crystal with large-size and high-quality can be grown.

The present disclosure relates to lift assemblies, and related methods and components, for substrate processing chambers. In one implementation, a lift assembly for disposition in relation to a substrate processing chamber includes a first motor, a first drive assembly coupled to the first motor, and a first support block coupled to the first drive assembly. The first motor is configured to linearly move the first support block using the first drive assembly. The lift assembly includes a second motor, a second drive assembly coupled to the second motor, and a second support block coupled to the second drive assembly. The second motor is configured to linearly move the second support block using the second drive assembly, and the second motor is configured to linearly move the second support block independently of the first motor linearly moving the first support block.

A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.

A method for producing a metal oxide nanocrystals according to the embodiment of the present invention comprises continuously flowing a nanocrystal precursor solution comprising a nanocrystal precursor into a continuous flow path and heating the nanocrystal precursor solution in the continuous flow path to create nanocrystals, comprising: providing a nanocrystal precursor solution supply unit that is connected to the continuous flow path and comprises a first vessel and a second vessel; delivering a nanocrystal precursor solution in the second vessel to the continuous low path; and creating a nanocrystal precursor solution in the first vessel as a different batch from the nanocrystal precursor solution in the second vessel.