The invention relates to a composition that contains a first semiconductor SC1, particles that comprise one or more element(s) M in the metal state selected from among an element of groups IVB, VB, VIB, VIIB, VIIIB, IB, IIB, IIIA, IVA and VA of the periodic table, and a second semiconductor SC2 that comprises indium oxide, with said first semiconductor SC1 being in direct contact with said particles that comprise one or more element(s) M in the metal state, with said particles being in direct contact with said second semiconductor SC2 that comprises indium oxide in such a way that the second semiconductor SC2 covers at least 50% of the surfaces of the particles that comprise one or more element(s) M in the metal state. The invention also relates to its preparation method as well as its application of photocatalysis.

The invention relates to a composition that contains a first semiconductor SC1, particles that comprise one or more element(s) M in the metal state selected from among an element of groups IVB, VB, VIB, VIIB, VIIIB, IB, IIB, IIIA, IVA and VA of the periodic table, and a second semiconductor SC2 that comprises indium oxide, with said first semiconductor SC1 being in direct contact with said particles that comprise one or more element(s) M in the metal state, with said particles being in direct contact with said second semiconductor SC2 that comprises indium oxide in such a way that the second semiconductor SC2 covers at least 50% of the surfaces of the particles that comprise one or more element(s) M in the metal state. The invention also relates to its preparation method as well as its application of photocatalysis.

The present invention relates to a catalysed process of production of hydrogen from silylated derivatives as hydrogen carrier compounds. The present invention also relates to a new catalyst used in the catalysed process of production of hydrogen from silylated derivatives as hydrogen carrier compounds.

The present invention relates to a catalysed process of production of hydrogen from silylated derivatives as hydrogen carrier compounds. The present invention also relates to a new catalyst used in the catalysed process of production of hydrogen from silylated derivatives as hydrogen carrier compounds.

Provided is a catalyst structure for a liquid organic hydrogen carrier (LOHC) dehydrogenation reactor, including a support, a plurality of channels formed on the support in such a manner that the LOHC may flow therethrough, and an LOHC dehydrogenation catalyst that is coated on the inner surfaces of the channels and is in contact with the LOHC to carry out LOHC dehydrogenation, wherein the hydrogen gas generated from the dehydrogenation is discharged along the channels so that the contact area between the LOHC and the LOHC dehydrogenation catalyst may be increased.

The invention relates to a composition that contains a first semiconductor SC1, particles that comprise one or more element(s) M in the metal state selected from among an element of groups IVB, VB, VIB, VIIB, VIIIB, IB, IIB, IIIA, IVA and VA of the periodic table, and a second semiconductor SC2 that comprises cerium oxide, with said first semiconductor SC1 being in direct contact with said particles that comprise one or more element(s) M in the metal state, with said particles being in direct contact with said second semiconductor SC2 that comprises cerium oxide in such a way that the second semiconductor SC2 covers at least 50% of the surfaces of the particles that comprise one or more element(s) M in the metal state. The invention also relates to its preparation method as well as its application of photocatalysis.

The invention relates to a composition that contains a first semiconductor SC1, particles that comprise one or more element(s) M in the metal state selected from among an element of groups IVB, VB, VIB, VIIB, VIIIB, IB, IIB, IIIA, IVA and VA of the periodic table, and a second semiconductor SC2 that comprises cerium oxide, with said first semiconductor SC1 being in direct contact with said particles that comprise one or more element(s) M in the metal state, with said particles being in direct contact with said second semiconductor SC2 that comprises cerium oxide in such a way that the second semiconductor SC2 covers at least 50% of the surfaces of the particles that comprise one or more element(s) M in the metal state. The invention also relates to its preparation method as well as its application of photocatalysis.

A catalyst system includes a complex having formula I which advantageously has a sterically protecting N-heterocyclic carbene (NHC) carbene-pyridine ligand to handle harsh reactions conditions than many prior art catalysts:

##STR00001##

wherein M is a transition metal; o is 0, 1, 2, 3, or 4; R.sub.1 is a C.sub.1-6 alkyl, a C.sub.6-18 aryl, or an optionally substituted C.sub.5-18 heteroaryl. In a refinement, R.sub.1 is methyl, ethyl, butyl, n-propyl, isopropyl, n-butyl, sec-butyl, or t-butyl; R.sub.2, R.sub.3, R.sub.3′ are independently an optionally substituted C.sub.1-6 alkyl, halo (e.g., Cl, F, Br, etc), NO.sub.2, an optionally substituted C.sub.6-18 aryl, or an optionally substituted C.sub.5-18 heteroaryl; R.sub.4, R.sub.4′ are independently an optionally substituted C.sub.1-6 alkyl, halo, NO.sub.2, an optionally substituted C.sub.6-18 aryl, or an optionally substituted C.sub.5-18 heteroaryl; and X.sup.− is a negatively charge counter ion and L.sub.1, L.sub.2 are each independently a neutral ligand.

A bimetal oxysulfide solid-solution catalyst is provided. The bimetal oxysulfide solid-solution catalyst is represented by the following formula:
Cu.sub.xM.sup.(2).sub.yO.sub.zS.sub.γ wherein M.sup.(2) includes monovalent Silver (Ag), divalent Zinc (Zn), Manganese (Mn), Nickel (Ni), Cobalt (Co), and Tin (Sn.sup.II), trivalent Indium (In), Cerium (Ce), Antimony (Sb), and Gallium (Ga), tetravalent Tin (Sn.sup.IV), or pentavalent Molybdenum (Mo), 0<y<0.3, 0.7<x<1.0, 0<z<0.5, and 0.5<γ<1.0. In addition, a manufacturing method of the bimetal oxysulfide solid-solution catalyst and applications of the bimetal oxysulfide solid-solution catalyst are also provided.

A bimetal oxysulfide solid-solution catalyst is provided. The bimetal oxysulfide solid-solution catalyst is represented by the following formula:
Cu.sub.xM.sup.(2).sub.yO.sub.zS.sub.γ wherein M.sup.(2) includes monovalent Silver (Ag), divalent Zinc (Zn), Manganese (Mn), Nickel (Ni), Cobalt (Co), and Tin (Sn.sup.II), trivalent Indium (In), Cerium (Ce), Antimony (Sb), and Gallium (Ga), tetravalent Tin (Sn.sup.IV), or pentavalent Molybdenum (Mo), 0<y<0.3, 0.7<x<1.0, 0<z<0.5, and 0.5<γ<1.0. In addition, a manufacturing method of the bimetal oxysulfide solid-solution catalyst and applications of the bimetal oxysulfide solid-solution catalyst are also provided.