A method for preparing an ordered cross-stacked metal oxide nanowire array is provided. The method includes the following steps: conducting synthesis by using an amphiphilic diblock copolymer as a structure directing agent, tetrahydrofuran (THF) as a solvent and polyoxometalates (POMs) as an inorganic precursor, where the diblock copolymer can interact with POMs via an electrostatic force to form a core-shell cylindrical micelle in the solvent, which self-assembles to form an ordered multilayer-crossed organic-inorganic composite nanostructure during an evaporation process; the template is removed by calcination in air, thereby obtaining ordered and crossed metal oxide nanowires with various elements doping. The nanowire array material has a high specific surface area, a high crystallinity, and realizes uniform doping of heteroatoms.

A method for obtaining metal oxides supported on mesoporous silica particles includes a) providing a solution of at least one metal salt, b) providing a solution of at least one template forming agent of the general formula (I) Y.sub.3Si(CH.sub.2).sub.n—X (I), wherein X is a complexing functional group; Y is —OH or a hydrolysable moiety selected from the group containing halogen, alkoxy, aryloxy, acyloxy, c) mixing the metal salt solution and the complex forming agent solution to obtain a metal precursor; d) adding at least one solution containing at least one pore structure directing agent to the metal precursor to obtain a metal precursor template mixture; e) adding at least one alkali silicate solution to the metal precursor template mixture at room temperature to obtain a silica-supported metal complex; and f) calcination of the silica-supported metal complex under air to obtain the supported metal oxide mesoporous silica particles.

A catalyst-free synthesis method for the formation of a metalorganic compound comprising a desired (first) metal may include, for example, selecting another (second) metal and an organic solvent, with the second metal being selected to (i) be more reactive with respect to the organic solvent than the first metal and (ii) form, upon exposure of the second metal to the organic solvent, a reaction by-product that is more soluble in the organic solvent than the metalorganic compound. An alloy comprising the first metal and the second metal may be first produced (e.g., formed or otherwise obtained) and then treated with the organic solvent in a liquid phase or a vapor phase to form a mixture comprising (i) the reaction by-product comprising the second metal and (ii) the metalorganic compound comprising the first metal. The metalorganic compound may then be separated from the mixture in the form of a solid.

A catalyst-free synthesis method for the formation of a metalorganic compound comprising a desired (first) metal may include, for example, selecting another (second) metal and an organic solvent, with the second metal being selected to (i) be more reactive with respect to the organic solvent than the first metal and (ii) form, upon exposure of the second metal to the organic solvent, a reaction by-product that is more soluble in the organic solvent than the metalorganic compound. An alloy comprising the first metal and the second metal may be first produced (e.g., formed or otherwise obtained) and then treated with the organic solvent in a liquid phase or a vapor phase to form a mixture comprising (i) the reaction by-product comprising the second metal and (ii) the metalorganic compound comprising the first metal. The metalorganic compound may then be separated from the mixture in the form of a solid.

Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X].sub.3.n[C], wherein [A], [B], [X], [C] and n are as defined in the specification.

The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.

Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X].sub.3.n[C], wherein [A], [B], [X], [C] and n are as defined in the specification.

The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.

A catalyst-free synthesis method for the formation of a metalorganic compound comprising a desired (first) metal may include, for example, selecting another (second) metal and an organic solvent, with the second metal being selected to (i) be more reactive with respect to the organic solvent than the first metal and (ii) form, upon exposure of the second metal to the organic solvent, a reaction by-product that is more soluble in the organic solvent than the metalorganic compound. An alloy comprising the first metal and the second metal may be first produced (e.g., formed or otherwise obtained) and then treated with the organic solvent in a liquid phase or a vapor phase to form a mixture comprising (i) the reaction by-product comprising the second metal and (ii) the metalorganic compound comprising the first metal. The metalorganic compound may then be separated from the mixture in the form of a solid.

A catalyst-free synthesis method for the formation of a metalorganic compound comprising a desired (first) metal may include, for example, selecting another (second) metal and an organic solvent, with the second metal being selected to (i) be more reactive with respect to the organic solvent than the first metal and (ii) form, upon exposure of the second metal to the organic solvent, a reaction by-product that is more soluble in the organic solvent than the metalorganic compound. An alloy comprising the first metal and the second metal may be first produced (e.g., formed or otherwise obtained) and then treated with the organic solvent in a liquid phase or a vapor phase to form a mixture comprising (i) the reaction by-product comprising the second metal and (ii) the metalorganic compound comprising the first metal. The metalorganic compound may then be separated from the mixture in the form of a solid.

Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X].sub.3.n[C], wherein [A], [B], [X], [C] and n are as defined in the specification. The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.

Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X].sub.3.n[C], wherein [A], [B], [X], [C] and n are as defined in the specification. The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.