Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

Nanotube filaments comprising carbon, boron and nitrogen of the general formula B.sub.xC.sub.yN.sub.z, having high-aspect ratio and high-crystallinity produced by a pressurized vapor/condenser method and a process of production. The process comprises thermally exciting a boron-containing target in a chamber containing a carbon source and nitrogen at a pressure which is elevated above atmospheric pressure.

Provided is a production method of a nitride fluorescent material capable of producing a nitride fluorescent material having a higher emission intensity. The production method is for producing a nitride fluorescent material having a composition containing at least one element M.sup.a selected from the group consisting of Sr, Ca, Ba and Mg, at least one element M.sup.b selected from the group consisting of Li, Na and K, at least one element M.sup.c selected from the group consisting of Eu, Ce, Tb and Mn, and Al and N, which includes subjecting a raw material mixture containing elements constituting the composition of the nitride fluorescent material, along with SrF.sub.2 and/or LiF added thereto as a flux, to a heat treatment, wherein the amount of the flux is in a range of 5.0% by mass or more and 15% by mass or less relative to the total amount, 100% by mass of the raw material mixture and the flux.

A phosphor is disclosed. In an embodiment the phosphor includes an inorganic compound having at least one activator E and N and/or O in its empirical formula, wherein E is selected from the group consisting of Mn, Cr, Ni, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Yb, Tm, Li, Na, K, Rb, Cs and combinations thereof, and wherein the inorganic compound crystallizes in a crystal structure with the same atomic sequence as in K.sub.2Zn.sub.6O.sub.7.

The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M.sub.2M.sub.nX.sub.n+1, such that each X is positioned within an octahedral array of M and M; wherein M and M each comprise different Group IIIB, IVB, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M atoms are sandwiched between the two-dimensional outer arrays of M atoms within the two-dimensional array of crystal cells.

An apparatus for manufacturing a quantum dot is provided, the apparatus including a first supplying part that provides a cationic precursor, a second supplying part that provides an anionic precursor, a mixing part connected to the first supplying part and the second supplying part, and a reaction part including a reaction tube configured to receive a liquid mixture of the cationic precursor and the anionic precursor from the mixing part and a first microwave generator configured to provide a microwave that is transmitted through the reaction tube. Therefore, the apparatus may produce a quantum dot of multi-element compounds.

MXene compound having a novel crystalline morphology, and process for fabricating a compound of MAX phase type for synthesis of said MXene compound. The invention firstly relates to a MXene compound advantageously having a crystalline morphology that is mostly in tablet form which may be obtained from a MAX phase precursor obtained by spark plasma sintering process whereby the powders of the mixture are insulated, and to a process for fabricating the MXene compound. The invention also relates to compound of MAX phase type obtained by spark plasma sintering process whereby the powders of the mixture are insulated. The invention also relates to a synthesis process of an MXene compound from said precursor, and to the MXene compound thus obtained advantageously having a crystalline morphology that is mostly in tablet form.

A gas atomization apparatus is disclosed for producing high purity fine refractory compound powders. After the system reaches high vacuum, a first stage inert atomizing gas breaks superheated metal melt into droplets and a second stage reactive atomizing gas breaks the droplets further into ultrafine droplets while reacts with them to form refractory compound powders. The first stage atomizing gas is inert gas able to break up melt into droplets and prevent crust formation on the nozzle front. A reaction time enhancer is arranged at bottom of reaction chamber to furnish a reactive gas flow in a reverse direction of the falling droplets and powders. Under the reverse gas flow, the falling droplets and powders change moving direction and travel longer distance in reaction chamber to increase reaction time. This apparatus can produce refractory powders with ultrahigh purity and uniform powder size while maintain high process energy efficiency.

In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies one for transmit and the other for receive. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The present invention provides frequency tunable film bulk acoustic resonators (FBAR) with different structures. Thin film biasing resistors are integrated into the FBAR structure for DC biasing and RF isolation. A plurality of the present tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying DC biasing voltages to the resonators.

In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies one for transmit and the other for receive. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The present invention provides frequency tunable film bulk acoustic resonators (FBAR) with different structures. Thin film biasing resistors are integrated into the FBAR structure for DC biasing and RF isolation. A plurality of the present tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying DC biasing voltages to the resonators.