There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): Eu.sub.aSi.sub.bAl.sub.cO.sub.dN.sub.e, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MI.sub.fEu.sub.gSi.sub.hAl.sub.kO.sub.mN.sub.n or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MII.sub.1-pEu.sub.p)MIIISiN.sub.3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

The present disclosure is directed to antennas for transmitting and/or receiving electrical signals comprising a MXene composition, devices comprising these antennas, and methods of transmitting and receiving signals using these antennas.

A method of making nanoparticles including a semiconducting nitride is provided. The method includes reacting precursors in a gas phase to form the nanoparticles including the semiconducting nitride. The precursors include at least one of a gallium (Ga) precursor or an indium (In) precursor and a nitrogen (N) precursor. The semiconducting nitride is In.sub.1xGa.sub.xN, where 0x1. Structures that include the nanoparticles and systems for making the nanoparticles are also provided.

Provided a method for producing a nitride phosphor. The method includes preparing a mixture that comprises a first nitride and a cerium source, the first nitride comprising, as a host crystal, a crystal having the same crystal structure as CaAlSiN.sub.3; and performing a heat treatment of the mixture at a temperature of 1,300 C. to 1,900 C. to obtain a second nitride. The first nitride comprises aluminum, silicon, nitrogen, and at least one selected from the group consisting of lithium, calcium, and strontium.

A nitride contains zinc and a group 4 element. The group 4 element contained in the nitride is at least one kind of element selected from the group consisting of titanium and zirconium. A content of zinc in the nitride is expressed as [Zn] atomic %. A total content of the group 4 element in the nitride is expressed as [M] atomic %. In the nitride, [M]/([Zn]+[M]) is more than 20% and less than 50%.

The invention relates to a white emitting light source with an improved luminescent material of the formula (AEN2/3)*b(MN)*c(SiN4/3)*d1CeO3/2*d2EuO*xSiO2*yAlO3/2 wherein AE is an alkaline earth metal chosen of the group of Ca, Mg, Sr and Ba or mixtures thereof and M is a trivalent element chosen of the group of Al, B, Ga, Sc with d1>10*d2. In combination with a UV to blue light generating device this material leads to an improved light quality and stability, especially an improved temperature stability for a wide range of applications.

A surface-coated cutting tool comprises a hard coat layer including a complex nitride layer on the tool substrate. The complex nitride layer has a composition: (Me.sub.1-x-yAl.sub.xM.sub.y)N.sub.z where Me is Ti or Cr, x0.80, 0.00y0.20, 0.20(1xy)0.65, and 0.90z1.10 (where x, y, and z represents atomic ratios, M is at least one element selected from the group consisting of Groups 4 to 6 elements, Y, Si, La, and Ce in the IUPAC periodic table). The hard coat layer has an interfacial region extending from a point above the surface of the tool substrate and having a thickness in a range of 5 to 100 nm, and the N content to the total of Me, Al, M, and N contents is 10 to 30 atomic % at the point and increases toward the surface of the cutting tool.

The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M.sub.2MnX.sub.n+1, such that each X is positioned within an octahedral array of M and M; wherein M and M each comprise different Group 11113, WE, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M atoms are sandwiched between the two-dimensional outer arrays of M atoms within the two-dimensional army of crystal cells.

Silicon-containing aluminum nitride particles contain a ratio of a total of a mass of aluminum and a mass of nitrogen of 90% by mass or more, and a ratio of a mass of silicon of 1.5% by mass or more and 10.0% by mass or less relative to a total of the mass of aluminum and the mass of silicon, as obtained by analyzing particles using an inductively coupled plasma-atomic emission spectroscope, and a mass of oxygen and the mass of nitrogen, as obtained by analyzing the particles using an oxygen/nitrogen analyzer, being 100% by mass, wherein a ratio (X/Y) is 0.40 or more and 0.85 or less, a ratio of the mass of oxygen is denoted as X % by mass, a specific surface area of the particles, as measured according to a BET method, is denoted as Y m.sup.2/g.

A substrate having a surface coated with a piezoelectric coating I, the coating including A-xMexN, wherein A is at least one of B, Al, Ga, In, Tl, and Me is at least one metallic element Me from the transition metal groups 3b, 4b, 5b 6b the lanthanides, and Mg the coating I having a thickness d, and further including a transition layer wherein the ratio of atomic percentage of Me to atomic percentage of Al steadily rises along a thickness extent 3 of said coating for which there is valid:
3d.