C01B21/0602

SURFACE-COATED CUTTING TOOL
20220143712 · 2022-05-12 · ·

A surface-coated cutting tool comprises a hard coat layer including a complex nitride layer on the tool substrate. The complex nitride layer has a composition: (Me.sub.1−x−yAl.sub.xM.sub.y)N.sub.z where Me is Ti or Cr, x≤0.80, 0.00≤y≤0.20, 0.20≤(1−x−y)≤0.65, and 0.90≤z≤1.10 (where x, y, and z represents atomic ratios, M is at least one element selected from the group consisting of Groups 4 to 6 elements, Y, Si, La, and Ce in the IUPAC periodic table). The hard coat layer has an interfacial region extending from a point above the surface of the tool substrate and having a thickness in a range of 5 to 100 nm, and the N content to the total of Me, Al, M, and N contents is 10 to 30 atomic % at the point and increases toward the surface of the cutting tool.

GROUP III-V COMPOUND HAVING LAYERED STRUCTURE AND FERROELECTRIC-LIKE PROPERTIES

Proposed are a layered Group III-V compound having ferroelectric properties, a Group III-V compound nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] M.sub.x−mA.sub.yB.sub.z (M is at least one of Group I or Group II elements, A is at least one of Group III elements, B is at least one of Group V elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x), and having ferroelectric-like properties.

Photostable composite for solar water splitting and process for the preparation thereof

The present invention discloses photostable composite of indium gallium nitride and zinc oxide for solar water splitting, comprising Indium content in the range of 1-40 wt %, Ga content in the range of 1 to 15 wt %, nitrogen content in the range of 0.1 to 5 wt %, and the remaining is ZnO. The combustion synthesis comprises the steps of: (a) dissolving 45 to 55 wt % urea, 75 to 80 wt % Zinc nitrate, 3 to 5 wt % Gallium nitrate, and 15 to 20 wt % Indium nitrate in water with stirring until a homogenous solution is formed; and (b) heating the homogenous solution of step (a) at a temperature in the range of 450-550 [deg.]C. for period in the range of 2 to 20 min to obtain the photostable composite.

Group-III nitride semiconductor nanoparticles and production method thereof

Provided are group-III nitride nanoparticles that prevent the piezoelectric field caused by strains on the nanoparticles, achieving good luminous efficiency. The group-III nitride nanoparticle represented by Al.sub.xGa.sub.yIn.sub.zN (0≤x, y, z≤1) incorporating two crystal structures; a wurtzite structure and a zincblende structure, in a single particle. As another example, the group-III nitride nanoparticle has a core-shell structure with a core and a shell, in which the particle constituting the core contains two crystal structures; the wurtzite structure and the zincblende structure, in the particle. Nanoparticles containing the two crystal structures can be produced by using a phosphorus-containing solvent as a reaction solvent, and the mixture ratio of the two crystal structures, (wurtzite structure)/(zincblende structure), is 20/80 or higher.

Tuning the piezoelectric and mechanical properties of the ALN system via alloying with YN and BN

Methods and materials are disclosed for simultaneously optimizing both the piezoelectric and mechanical properties of wurtzite piezoelectric materials based on the AlN wurtzite and alloyed with one or two end-members from the set BN, YN, CrN, and ScN.

NITRIDE PHOSPHOR AND MANUFACTURING METHOD THEREFOR

Provided is a method for producing a nitride phosphor. The method includes obtaining a first heat-treated product having a crystallite diameter of not less than 150 nm by subjecting a compound containing at least one rare-earth element selected from the group consisting of Y, La, Ce, Lu, and Gd to heat treatment at a temperature within a range of 800° C. to 1800° C.; and obtaining a second heat-treated product by subjecting a mixture containing the first heat-treated product and a raw material contained as required to heat treatment at a temperature within a range of 1200° C. to 1800° C. The raw material contains an M source containing at least one rare-earth element M selected from the group consisting of Y, Lu, and Gd; an La source; an Si source; and a Ce source. The mixture is prepared with the raw materials such that a fed composition is represented by a Formula of La.sub.wM.sub.xSi.sub.6N.sub.y:Ce.sub.z. In this Formula, w, x, y, and z satisfy 0.5≤w≤4.5, 0<x≤1.5, 0≤y≤12, 0<z≤1.5, 0.15<(x+z)<3.0, and 3.0≤(w+x+z)≤7.5.

METHOD OF PREPARING NANO-POROUS POWDER MATERIAL
20230321720 · 2023-10-12 ·

The present disclosure relates to a method of preparing a nano-porous powder material. The method includes: firstly removing A in the alloy A.sub.xT.sub.y by using an ultrasonically-assisted de-alloying method to prepare a nano-porous T coarse powder, and then, allowing the nano-porous T coarse powder to perform M-ization reaction with a gas reactant containing M to obtain a nano-porous T-M coarse powder, and finally, further crushing the nano-porous T-M coarse powder using a jet mill to obtain a nano-porous T-M fine powder. The method can achieve low-cost mass production of the nano-porous T-M fine powder, bringing broad application prospects.

Red phosphor and light emitting device

A phosphor having a main crystal phase having a crystal structure identical to that of CaAlSiN.sub.3, and including a Ca element partially replaced with an Eu element, wherein the phosphor has a median size d50 of 12.0 μm or more and 22.0 μm or less, as measured according to a laser diffraction scattering method, and has a specific surface area of 1.50 m.sup.2/g or more and 10.00 m.sup.2/g or less, as measured according to a BET method.

Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal

A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1×10.sup.20 cm.sup.−3 or more, and the concentration of the hydrogen element is 1×10.sup.19 cm.sup.−3 or more.

HIGH-ENTROPY NITRIDE CERAMIC FIBER AND PREPARATION METHOD AND USE THEREOF
20220274888 · 2022-09-01 ·

Disclosed are a high-entropy nitride ceramic fiber, and a preparation method and use thereof. The high-entropy ceramic fiber comprises Ti, Hf, Ta, Nb, and Mo; the high-entropy nitride ceramic fiber presents single crystal phase, and each of the elements are uniformly distributed at molecular level. The preparation method of the high-entropy ceramic fiber comprises: mixing a high-entropy ceramic precursor comprising the target metal elements, a spinning aid, and a solvent uniformly to prepare a precursor spinning solution, followed by working procedures of spinning, pyrolyzation, and nitriding to prepare the high-entropy nitride ceramic fiber. The high-entropy nitride ceramic fiber can be used in photocatalysis process of carbon dioxide to prepare methane.