Patent classifications
C01B21/0602
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIONAL ELEMENT
A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface of a crystal layer of the group 13 nitride includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, observed by cathode luminescence. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride.
Spiral Grain Coatings for Glass Structures in Electronic Devices
An electronic device may include electrical components mounted within a housing. The device may have a display on a front face of the device that is covered with a glass structure and may have a glass structure that forms part of the housing on a rear face of the device. The housing may also have a sidewall formed from glass, metal, or other materials. The glass structures of the electronic device may have a surface that is covered with an antiscratch layer, an antireflection layer, or other coating. A spiral grain polycrystalline material may form a coating on the surface of the glass structures to help avoid fracturing of the glass structures when the electronic device is dropped or otherwise subjected to stress.
CATALYST MATERIAL AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing catalyst material is provided, which includes putting an M target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, and M is Nb, Ta, or a combination thereof. Powers are provided to the M target and the M target, respectively. Providing ions to bombard the M target and the M target to sputtering deposit M.sub.aM.sub.bN.sub.2 on a substrate, wherein 0.7a1.7, 0.3b1.3, and a+b=2, wherein M.sub.aM.sub.bN.sub.2 is a cubic crystal system.
SOLID-STATE HYBRID ELECTROLYTES, METHODS OF MAKING SAME, AND USES THEREOF
Provided are solid-state hybrid electrolytes. The hybrid electrolytes have a polymeric material layer, which may be a polymer/copolymer layer or a gel polymer/copolymer layer, disposed on at least a portion of an exterior surface or all of the exterior surfaces of a solid-state electrolyte. A hybrid electrolyte can form an interface with an electrode of an ion-conducting battery that exhibits desirable properties. The solid-state electrolyte can comprise a monolithic SSE body, a mesoporous SSE body, or an inorganic SSE having fibers or strands, which may be aligned. In the case of solid-state electrolytes that have strands, the strands can be formed using a sacrificial template. The hybrid solid-state electrolytes can be used in ion-conducting batteries, which may be flexible, ion-conducting batteries.
NOVEL LITHIUM METAL NITRIDES AS LITHIUM SUPER-IONIC CONDUCTORS
Solid-state lithium ion electrolytes of lithium metal nitride based compounds are provided which contain an anionic framework capable of conducting lithium ions. Materials of specific formulae are provided and methods to alter the materials with inclusion of aliovalent ions shown. Lithium batteries containing the composite lithium ion electrolytes are provided. Electrodes containing the lithium metal nitride based composites are also provided.
Nanolaminated 2-2-1 MAX-phase compositions
The present invention is directed to crystalline solids having an empirical formula of M.sub.2A.sub.2X, wherein M is at least one Group IIIB, IVB, VB, or VIB metal, preferably Cr, Hf, Sc, Ti, Mo, Nb, Ta, V, Zr, or a combination thereof; wherein A is Al, Ga, Ge, In, Pb, or Sn, or a combination thereof; and each X is C.sub.xN.sub.y, where x+y=1. In some particular embodiments, the crystalline composition has a unit cell stoichiometry of Mo.sub.2Ga.sub.2C.
NITRIDE MATERIAL, PIEZOELECTRIC BODY FORMED OF SAME, AND MEMS DEVICE, TRANSISTOR, INVERTER, TRANSDUCER, SAW DEVICE, AND FERROELECTRIC MEMORY USING THE PIEZOELECTRIC BODY
Provided is a scandium-doped aluminum nitride with nitrogen polarity. The nitride material is represented by the chemical formula ScXMYAl1-X-YN. M is at least one or more elements among C, Si, Ge, and Sn, X is greater than 0 and not greater than 0.4, Y is greater than 0 and not greater than 0.2, and X/Y is less than or equal to 5. The nitride material has piezoelectricity with a polarization direction of nitrogen polarity opposite to the direction of thin film growth.
Red fluorescent body and light-emitting device
A red phosphor represented by general formula: MSiAlN.sub.3, wherein M is at least one or more elements selected from Mg, Ca, Sr and Ba, and is partially replaced with Eu and has, as a host crystal, a crystal structure identical to that of a CaAlSiN.sub.3 crystal phase, and the phosphor has a bulk density of 0.70 g/cm.sup.3 or more and 2.30 g/cm.sup.3 or less. There is also provided a light-emitting element including the red phosphor and a semiconductor light-emitting element capable of exciting the red phosphor.
Antennas Comprising MX-ENE Films And Composites
The present disclosure is directed to antennas for transmitting and/or receiving electrical signals comprising a MXene composition, devices comprising these antennas, and methods of transmitting and receiving signals using these antennas.
PHOSPHOR POWDER, WAVELENGTH CONVERSION BODY, AND LIGHT EMITTING DEVICE
A phosphor powder containing a phosphor represented by General Formula (I) below. In General Formula (I), M1 includes at least La and optionally further includes one or more elements selected from the group made of lanthanoid elements other than Y and La, M2 includes at least Ba and optionally further includes one or more elements selected from the group made of Mg, Ca, and Sr, x is equal to or more than 0.005 and equal to or less than 0.2, y is equal to or more than 0 and equal to or less than 0.1, and z is more than 0.44 and equal to or less than 0.99: (Eu.sub.(1-x)(1-z)M1.sub.xM2.sub.(1-x)z).sub.2(Si.sub.1-yAl.sub.y).sub.5N.sub.8 . . . (I).