Patent classifications
C01B21/064
GROUP-III NITRIDE SEMICONDUCTOR NANOPARTICLES, CORE-SHELL-TYPE PARTICLES, AND METHOD FOR MANUFACTURING SAME
A method for manufacturing Group-III nitride semiconductor nanoparticles includes synthesizing Group-III nitride semiconductor nanoparticles having a particle size of 16 nm or less by reacting materials containing one or more Group-III elements M in a liquid phase, wherein a coordination solvent is used, and trimethyl M is used as at least one Group-III element material among the materials containing one or more Group-III elements M.
BORON NITRIDE POWDER AND METHOD FOR PRODUCING BORON NITRIDE POWDER
One aspect of the present disclosure provides a boron nitride powder containing agglomerated particles formed by agglomeration of primary particles of hexagonal boron nitride, in which a degree of purity is 98.5% by mass or more, and a number of particles having a magnetizing ability is 10 or less per 10 g of the boron nitride powder.
BORON NITRIDE POWDER AND METHOD FOR PRODUCING BORON NITRIDE POWDER
One aspect of the present disclosure provides a boron nitride powder containing agglomerated particles formed by agglomeration of primary particles of hexagonal boron nitride, in which a degree of purity is 98.5% by mass or more, and a number of particles having a magnetizing ability is 10 or less per 10 g of the boron nitride powder.
BORON NITRIDE POWDER, AND METHOD FOR PRODUCING BORON NITRIDE POWDER
One aspect of the present disclosure provides a boron nitride powder containing agglomerated particles formed by agglomeration of primary particles of hexagonal boron nitride, in which a degree of purity is 98.5% by mass or more, and a concentration of elutable impurities is 700 ppm or less.
BORON NITRIDE POWDER, AND METHOD FOR PRODUCING BORON NITRIDE POWDER
One aspect of the present disclosure provides a boron nitride powder containing agglomerated particles formed by agglomeration of primary particles of hexagonal boron nitride, in which a degree of purity is 98.5% by mass or more, and a concentration of elutable impurities is 700 ppm or less.
INTERFACIAL FERROELECTRICITY BY VAN DER WAALS SLIDING
The technology subject of the present application concerns methods and systems for manufacturing and producing stable polarized or ferroelectric layered materials.
METAMATERIAL STRUCTURE AND FORMING METHOD THEREOF
A metamaterial structure and a forming method thereof are provided. The metamaterial structure according to embodiments of the present invention comprises first metamaterial unit structures and second metamaterial unit structures, and the first metamaterial unit structures and the second metamaterial unit structures are arranged alternately. The method of forming a metamaterial structure according to embodiments of the present invention comprises forming a first suspension including first metamaterial unit structures formed by exfoliation of a first metamaterial by mixing the first metamaterial and a first solvent, forming a second suspension including second metamaterial unit structures formed by exfoliation of a second metamaterial by mixing the second metamaterial and a second solvent, forming a nanohybrid structure in which the first metamaterial unit structures and the second metamaterial unit structures are arranged alternately by mixing the first suspension and the second suspension and compressing and sintering the nanohybrid structure.
NANOTUBE DISPERSION, NANOTUBE FILM USING THE NANOTUBE DISPERSION AND MANUFACTURING METHOD THEREOF
A nanotube dispersion, a nanotube film manufactured using the same, and a manufacturing method thereof are provided. The nanotube dispersion comprises a nanotube, a nanotube dispersant including at least one selected from a compound represented by a chemical formula 1 and a salt thereof, and a solvent including one selected from an organic solvent, water, and a mixture thereof.
BNNT THERMAL MANAGEMENT MATERIAL FOR HIGH-POWER SYSTEMS
Thermal interface materials may be enhanced through the dispersion of refined boron nitride nanotubes (BNNTs) into a polymer matrix material and one or more microfillers. A refined BNNT material may be formed by reducing free boron particle content from an as-synthesized BNNT material, and in some embodiments reducing h-BN content. Reducing these species improves the thermal conductivity of the BNNTs. Refined BNNTs may be deagglomerated to reduce the size and mass of BNNTs in agglomerations when the deagglomerated BNNT material is dispersed into a target polymer matrix material. The deagglomerated BNNT material may be lyophilized prior to dispersion in the matrix material, to retain the deagglomeration benefit following return to solid state. The surface of the deagglomerated BNNT material may be modified, with one or more functional groups that improve dispersibility and heat transfer in the target polymer matrix material.
BNNT THERMAL MANAGEMENT MATERIAL FOR HIGH-POWER SYSTEMS
Thermal interface materials may be enhanced through the dispersion of refined boron nitride nanotubes (BNNTs) into a polymer matrix material and one or more microfillers. A refined BNNT material may be formed by reducing free boron particle content from an as-synthesized BNNT material, and in some embodiments reducing h-BN content. Reducing these species improves the thermal conductivity of the BNNTs. Refined BNNTs may be deagglomerated to reduce the size and mass of BNNTs in agglomerations when the deagglomerated BNNT material is dispersed into a target polymer matrix material. The deagglomerated BNNT material may be lyophilized prior to dispersion in the matrix material, to retain the deagglomeration benefit following return to solid state. The surface of the deagglomerated BNNT material may be modified, with one or more functional groups that improve dispersibility and heat transfer in the target polymer matrix material.