An apparatus comprising: a fermion source nanolayer (90); a first insulating nanolayer (92); a fermion transport nanolayer (94); a second insulating nanolayer (96); a fermion sink nanolayer (98); a first contact for applying a first voltage to the fermion source nanolayer; a second contact for applying a second voltage to the fermion sink nanolayer; and a transport contact for enabling an electric current via the fermion transport nanolayer. In a particular example, the apparatus comprises three graphene sheets (90, 94, 98) interleaved with two-dimensional Boron-Nitride (hBN) layers (92, 96).

An apparatus comprising: a fermion source nanolayer (90); a first insulating nanolayer (92); a fermion transport nanolayer (94); a second insulating nanolayer (96); a fermion sink nanolayer (98); a first contact for applying a first voltage to the fermion source nanolayer; a second contact for applying a second voltage to the fermion sink nanolayer; and a transport contact for enabling an electric current via the fermion transport nanolayer. In a particular example, the apparatus comprises three graphene sheets (90, 94, 98) interleaved with two-dimensional Boron-Nitride (hBN) layers (92, 96).

An endless belt comprising a polyimide-based substrate layer. A plurality of boron nitride nanotubes are dispersed in the polyimide.

The problem to be solved is to provide a boron nitride particle stably and efficiently with a high organic modification ratio.

To solve the problem, the continuous production method according to the present invention comprises contacting step for continuously supplying a boron nitride with pretreatment and an organic modifier to continuously contact them with an aqueous material in a subcritical state in a presence of an acid or a base. The pretreatment comprises any one or more kinds selected from adding an acid to the boron nitride, adding a base to the boron nitride, adding an oxidant to the boron nitride, adding a reductant to the boron nitride, and conducting a hydrothermal treatment or a solvothermal treatment to the boron nitride.

Provided herein is a nanopore structure, which in one aspect is a “carbon nanotube porin”, that comprises a short nanotube with an associated lipid coating. Also disclosed are compositions and methods enabling the preparation of such nanotube/lipid complexes. Further disclosed is a method for therapeutics delivery that involves a drug delivery agent comprising a liposome with a NT loaded with a therapeutic agent, introducing the therapeutic agent into a cell or a tissue or an organism; and subsequent release of the therapeutic agents into a cell.

According to an embodiment of the present disclosure, mass production is possible and production time may be reduced, thus increasing yield. Furthermore, a method and apparatus for manufacturing a nanomaterial, which can manufacture a high-purity nanomaterial are disclosed.

Disclosed are methods for forming boron nitride-containing aggregates that exhibit improved wear by attrition, and resulting filled polymers that exhibit significantly improved thermal conductivity. The boron nitride-containing aggregates are prepared according to a method that includes wet granulating boron nitride powder with a granulation solution to form wet boron nitride-containing granules; and drying the wet boron nitride-containing granules to cause evaporation of solvent in the granulation solution, thereby forming boron nitride-containing granules. Sintering achieves the desired boron nitride-containing aggregates.

To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m.sup.2/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 μm and at most 1 μm, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa.Math.s.

To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m.sup.2/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 μm and at most 1 μm, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa.Math.s.

A method for purifying a boron nitride nanotube feedstock is disclosed, including an initial step of mixing a boron nitride nanotube (BNNT) feedstock with a solvent to form an initial mixture. This BNNT feedstock is made up of hexagonal boron nitride (h-BN) particles and less than about 50 weight percent BNNTs on a dry basis. This initial mixture is then sonicated within a treatment vessel using an ultrasonic probe. At least a portion of the initial mixture is filtered out of the treatment vessel and across a nanoporous membrane at the same as the sonication. In this manner, the method provides a filtrate which is enriched in h-BN particles relative to the initial mixture and a retentate which is enriched in BNNTs relative to the initial mixture.