C01B21/064

Method of manufacturing hexagonal boron nitride laminates
20170284612 · 2017-10-05 ·

A method of manufacturing a hexagonal boron nitride laminate contains steps of: a) Dissolve dielectric polymers in solvent. b) Mixing h-BN powder to form a well-mixed h-BN coating slurry. c) Coating slurry on substrates and dried at 100-150° C. The substrates can directly be etched or processed to form electric circuits. Substrates can also be completely etched or detached to attain a free standing laminate. Thereby, a hexagonal boron nitride laminate exhibit thermal conductivity of 10 to 40 W/m.Math.K, which is significantly larger than that currently used in thermal management. In addition, thermal conductivity of hexagonal boron nitride laminates increases with the increasing mass density, which opens a way of fine tuning of its thermal properties. For heat dissipation application, hexagonal boron nitride laminate coating can significantly enhance the performance of LED light bulb.

Induction-coupled plasma synthesis of boron nitride nanotubes

Described herein are processes and apparatus for the large-scale synthesis of boron nitride nanotubes (BNNTs) by induction-coupled plasma (ICP). A boron-containing feedstock may be heated by ICP in the presence of nitrogen gas at an elevated pressure, to form vaporized boron. The vaporized boron may be cooled to form boron droplets, such as nanodroplets. Cooling may take place using a condenser, for example. BNNTs may then form downstream and can be harvested.

Induction-coupled plasma synthesis of boron nitride nanotubes

Described herein are processes and apparatus for the large-scale synthesis of boron nitride nanotubes (BNNTs) by induction-coupled plasma (ICP). A boron-containing feedstock may be heated by ICP in the presence of nitrogen gas at an elevated pressure, to form vaporized boron. The vaporized boron may be cooled to form boron droplets, such as nanodroplets. Cooling may take place using a condenser, for example. BNNTs may then form downstream and can be harvested.

SURFACE-MODIFIED INORGANIC SUBSTANCE, METHOD FOR MANUFACTURING SURFACE-MODIFIED INORGANIC SUBSTANCE, METHOD FOR MODIFYING SURFACE OF INORGANIC SUBSTANCE WITH ORGANIC SUBSTANCE, HEAT DISSIPATION MATERIAL, THERMALLY CONDUCTIVE MATERIAL, AND LUBRICANT
20170247546 · 2017-08-31 · ·

The present invention provides a novel surface-modified inorganic substance obtained by modifying the surface of an inorganic nitride or an inorganic oxide with a boronic acid compound, and a heat dissipation material, a thermally conductive material, and a lubricant which use the surface-modified inorganic substance. The present invention also provides a method for manufacturing the surface-modified inorganic substance, and provides, as a novel method for modifying the surface of an inorganic substance selected from an inorganic oxide and an inorganic nitride with an organic substance, a method for modifying the surface of an inorganic nitride or an inorganic oxide with an organic substance that includes making a contact between the inorganic nitride or the inorganic oxide with a boronic acid compound.

Hexagonal boron nitride nanosheet/ceramic nanocomposite powder and producing method of the same, and hexagonal boron nitride nanosheet/ceramic nanocomposite materials and producing method of the same

The present disclosure relates to hexagonal boron nitride nanosheet/ceramic nanocomposite powder including surface-modified hexagonal boron nitride nanosheets which serve as a reinforcing agent for the matrix ceramic, and a method for producing the same, and a hexagonal boron nitride nanosheet/ceramic nanocomposite material including the hexagonal boron nitride nanosheet/ceramic nanocomposite powder and a method for producing the same.

Target holders, multiple incidence angle, and multizone heating for BNNT synthesis

In the synthesis of boron nitride nanotubes (BNNTs) via high temperature, high pressure methods, a boron feedstock may be elevated above its melting point in a nitrogen environment at an elevated pressure. Methods and apparatus for supporting the boron feedstock and subsequent boron melt are described that enhance BNNT synthesis. A target holder having a boron nitride interface layer thermally insulates the target holder from the boron melt. Using one or more lasers as a heat source, mirrors may be positioned to reflect and control the distribution of heat in the chamber. The flow of nitrogen gas in the chamber may be heated and controlled through heating elements and flow control baffles to enhance BNNT formation. Cooling systems and baffle elements may provide additional control of the BNNT production process.

TWO-DIMENSIONAL MATERIALS
20170240428 · 2017-08-24 ·

A method of preparing a 2D material (e.g. graphene or of boron nitride), the method comprising: (i) selecting a fluid comprising the 2D material dispersed in a solvent; (ii) using a filtration device to remove solvent from the fluid and increase the concentration of 2D material in the fluid, wherein the fluid suitably includes a surfactant, which may be sodium cholate or sodium dodecylbenezenesulphonate and wherein the filtration device is suitably a cross-flow filtration device.

Method of manufacturing hexagonal boron nitride laminates
20170239854 · 2017-08-24 ·

A method of manufacturing hexagonal boron nitride laminates contains steps of: a) Dissolving dielectric polymers in solvent. b) Mixing h-BN powder to form a well-mixed h-BN coating slurry. c) Coating slurry on substrates and dried at 100 to 150° C. d-1) For free standing h-BN film, peel off h-BN dielectric polymer layer from substrate in water batch by roll to roll process. d-2) For h-BN film on substrates, heat compression of the substrates and hBN laminates at 100 to 250° C. for multi-layer structures. Thereby, hexagonal boron nitride laminates exhibit thermal conductivity of 10 to 40 W/m.Math.K, which is significantly larger than that currently used in thermal management. In addition, thermal conductivity of hexagonal boron nitride laminates increases with the increasing mass density, which opens a way of fine tuning of its thermal properties.

Free Atom Nanotube Growth
20170233254 · 2017-08-17 ·

Disclosed is a free atom nanotube growth technology capable of continuously growing long, high quality nanotubes. This patent application is a Continuation In Part of the Trekking Atom Nanotube Growth patent application #14037034 filed on Sep. 25, 2013. The current invention represents a departure from chemical vapor deposition technology as the atomic feedstock does not originate in the gaseous environment surrounding the nanotubes. The technology mitigates the problems that cease carbon nanotube growth in chemical vapor deposition growth techniques: 1) The accumulation of material on the surface of the catalyst particles, suspected to be primarily amorphous carbon, 2) The effect of Ostwald ripening that reduces the size of smaller catalyst particles and enlarges larger catalyst particles, 3) The effect of some catalyst materials diffusing into the substrate used to grow carbon nanotubes and ceasing growth when the catalyst particle becomes too small.

Free Atom Nanotube Growth
20170233254 · 2017-08-17 ·

Disclosed is a free atom nanotube growth technology capable of continuously growing long, high quality nanotubes. This patent application is a Continuation In Part of the Trekking Atom Nanotube Growth patent application #14037034 filed on Sep. 25, 2013. The current invention represents a departure from chemical vapor deposition technology as the atomic feedstock does not originate in the gaseous environment surrounding the nanotubes. The technology mitigates the problems that cease carbon nanotube growth in chemical vapor deposition growth techniques: 1) The accumulation of material on the surface of the catalyst particles, suspected to be primarily amorphous carbon, 2) The effect of Ostwald ripening that reduces the size of smaller catalyst particles and enlarges larger catalyst particles, 3) The effect of some catalyst materials diffusing into the substrate used to grow carbon nanotubes and ceasing growth when the catalyst particle becomes too small.