Provided are a method for producing a ceramic sintered body having improved light emission intensity, a ceramic sintered body, and a light emitting device. The method for producing a ceramic sintered body comprises preparing a molded body that contains a nitride fluorescent material having a composition containing: at least one alkaline earth metal element M.sup.1 selected from the group consisting of Ba, Sr, Ca, and Mg; at least one metal element M.sup.2 selected from the group consisting of Eu, Ce, Tb, and Mn; Si; and N, wherein a total molar ratio of the alkaline earth metal element M.sup.1 and the metal element M.sup.2 in 1 mol of the composition is 2, a molar ratio of the metal element M.sup.2 is a product of 2 and a parameter y and wherein y is in a range of 0.001 or more and less than 0.5, a molar ratio of Si is 5, and a molar ratio of N is 8, and wherein the nitride fluorescent material has a crystallite size, as calculated by X-ray diffraction measurement using the Halder-Wagner method, of 550 or less, and calcining the molded body at a temperature in a range of 1,600 C. or more and 2,200 C. or less to obtain a sintered body.

Provided is a large-sized silicon nitride sintered substrate and a method for producing the same. The silicon nitride sintered substrate has a main surface 101a of a shape larger than a square having a side of a length of 120 mm. A ratio dc/de of the density dc of the central area and the density de of the end area of the main surface 101a is 0.98 or higher. The void fraction vc of the central area of the main surface 101a is 1.80% or lower, and the void fraction ve of the end area is 1.00% or lower. It is preferred that the density dc of the central area is 3.120 g/cm.sup.3 or higher, the density de of the end area is 3.160 g/cm.sup.3 or higher, and a ratio ve/vc of the void fraction vc of the central area and the void fraction ve of the end area is 0.50 or higher.

Provided is a large-sized silicon nitride sintered substrate and a method for producing the same. The silicon nitride sintered substrate has a main surface 101a of a shape larger than a square having a side of a length of 120 mm. A ratio dc/de of the density dc of the central area and the density de of the end area of the main surface 101a is 0.98 or higher. The void fraction vc of the central area of the main surface 101a is 1.80% or lower, and the void fraction ve of the end area is 1.00% or lower. It is preferred that the density dc of the central area is 3.120 g/cm.sup.3 or higher, the density de of the end area is 3.160 g/cm.sup.3 or higher, and a ratio ve/vc of the void fraction vc of the central area and the void fraction ve of the end area is 0.50 or higher.

Si.sub.3N.sub.4 nanotubes and nanorods wherein the nanotubes and nanorods of silicon nitride are pure -Si.sub.3N.sub.4 formed by carbothermal reduction of SiO.sub.2 from reacting agricultural husk material in heat and forming the silicon nitride nanotubes and nanorods.

Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

Disclosed herein are compositions, devices and methods for inactivating viruses, bacteria, and fungi. The compositions, methods, and devices may include coatings or slurries such as silicon nitride powder coatings or slurries for the inactivation of viruses, bacteria, and/or fungi.

Disclosed herein are compositions, devices and methods for inactivating viruses, bacteria, and fungi. The compositions, methods, and devices may include coatings or slurries such as silicon nitride powder coatings or slurries for the inactivation of viruses, bacteria, and/or fungi.

Method for producing a powder comprising particles (26) comprising amorphous, micro- or nano-crystalline Silicon nitride. The method comprises the steps of supplying a reactant gas (12) containing Silicon, and a reactant gas (12) containing Nitrogen, to a reaction chamber (16) of a reactor (10), and heating said reactant gases (12) to a temperature in the range of 510 C. to 1300 C. which is sufficient for thermal decomposition or reduction of the reactant gases (12) to take place inside the reaction chamber (16) to thereby produce a powder of amorphous, micro- or nano-crystalline particles (26) comprising Silicon nitride (SiNx) in which the atomic ratio of Silicon to Nitrogen is in the range 1:0.2 to 1:0.9. The produced powder of particles (26) may be used to produce a film, an electrode, such as an anode, for a battery, such as a Lithium ion battery.

Method for producing a powder comprising particles (26) comprising amorphous, micro- or nano-crystalline Silicon nitride. The method comprises the steps of supplying a reactant gas (12) containing Silicon, and a reactant gas (12) containing Nitrogen, to a reaction chamber (16) of a reactor (10), and heating said reactant gases (12) to a temperature in the range of 510 C. to 1300 C. which is sufficient for thermal decomposition or reduction of the reactant gases (12) to take place inside the reaction chamber (16) to thereby produce a powder of amorphous, micro- or nano-crystalline particles (26) comprising Silicon nitride (SiNx) in which the atomic ratio of Silicon to Nitrogen is in the range 1:0.2 to 1:0.9. The produced powder of particles (26) may be used to produce a film, an electrode, such as an anode, for a battery, such as a Lithium ion battery.