Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I):

##STR00001##

in which R is a substituted or unsubstituted organic group and R is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I):

##STR00001##

in which R is a substituted or unsubstituted organic group and R is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

A method for the post-combustion of flue gases, a silane or silicon and hydrogen or a hydrogen-releasing compound being fed to the flue gas for post-combustion, as well as a device being adapted for implementing the method for the post-combustion of flue gases. Also, the use of the silicon carbide and/or silicon nitride produced by the method, in the construction industry, as well as steam for generating power via a turbine.

A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing N, F, O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.

Described herein is an antiviral face mask and methods of use thereof to inactivate a virus in contact with the face mask. The face mask may include a fibrous material with silicon nitride powder impregnated therein and a layer surrounding the fibrous material. In some embodiments, silicon nitride is present in the fibrous material at a concentration of about 1 wt. % to about 15 wt. %.

A method of producing ceramic wafer includes a forming step and processing step. The processing step includes forming positioning notch or positioning, flat edge and edge profile, which avoids the ceramic wafers to have processing defect during cutting, grinding, and polishing, for increasing yield. The ceramic particles for producing ceramic wafer include nitride ceramic powder, oxide ceramic powder, and nitride ceramic powder. The ceramic wafer has low dielectric constant, insulation, and excellent heat dissipation, which can be applied for the need of semiconductor process, producing electric product and semiconductor equipment.

Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): ##STR00001##
in which R is a substituted or unsubstituted organic group and R is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): ##STR00001##
in which R is a substituted or unsubstituted organic group and R is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

A silicon nitride (SiN.sub.x) based anode is produced by combining a silicon precursor that includes cyclohexasilane and a nitrogen precursor. A doped silicon based anode is produced by combining a silicon precursor that includes cyclohexasilane and a dopant precursor selected from a boron precursor, a nitrogen precursor, a sulfur precursor, an aluminum precursor, a phosphorous precursor, and combinations thereof. Silicon nanowires are produced by depositing metallic nanoparticles on surfaces of carbon support particles and then depositing silicon from cyclohexasilane onto the carbon support particles. The silicon preferentially deposits onto the metallic nanoparticles to form silicon nanowires that extend off of the metallic nanoparticle away from the surfaces.

A silicon nitride (SiN.sub.x) based anode is produced by combining a silicon precursor that includes cyclohexasilane and a nitrogen precursor. A doped silicon based anode is produced by combining a silicon precursor that includes cyclohexasilane and a dopant precursor selected from a boron precursor, a nitrogen precursor, a sulfur precursor, an aluminum precursor, a phosphorous precursor, and combinations thereof. Silicon nanowires are produced by depositing metallic nanoparticles on surfaces of carbon support particles and then depositing silicon from cyclohexasilane onto the carbon support particles. The silicon preferentially deposits onto the metallic nanoparticles to form silicon nanowires that extend off of the metallic nanoparticle away from the surfaces.