A system for chemical transformation of 3D state materials is disclosed wherein, a reaction group having a main body arranged to shape a reaction chamber in which a component configured to support a sample of 3D state arranged to be chemically transform is expected. The system further includes an oven arranged to heat the reaction chamber and a GAS supply group arranged to release a first gas in the reaction chamber and/or a casing component, inside the main body, which has a chemical agent suitable for releasing a second gas into the reaction chamber. The main body has at least two turbines arranged to converge into the reaction chamber, the first and/or the second gas on the samples. The invention relates also to a method for chemical transformation of 3D state materials.

A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m.Math.K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio (T2/T1) of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with a front and a rear surfaces of the substrate is 20% or less. The dielectric strength mean value of the silicon nitride substrate can be 15 kV/rum or more. According to above structure, there can be obtained a silicon nitride substrate and a silicon nitride circuit board using the substrate in which variation in the dielectric strength is decreased.

A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m.Math.K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio (T2/T1) of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with a front and a rear surfaces of the substrate is 20% or less. The dielectric strength mean value of the silicon nitride substrate can be 15 kV/rum or more. According to above structure, there can be obtained a silicon nitride substrate and a silicon nitride circuit board using the substrate in which variation in the dielectric strength is decreased.

Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I):

##STR00001##

in which R is a substituted or unsubstituted organic group and R is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I):

##STR00001##

in which R is a substituted or unsubstituted organic group and R is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I):

##STR00001##

in which R is a substituted or unsubstituted organic group and R is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I):

##STR00001##

in which R is a substituted or unsubstituted organic group and R is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

A silicon chalcogenate precursor comprising the chemical formula of Si(XR.sup.1).sub.nR.sup.2.sub.4-n, where X is sulfur, selenium, or tellurium, R.sup.1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R.sup.2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.

A silicon chalcogenate precursor comprising the chemical formula of Si(XR.sup.1).sub.nR.sup.2.sub.4-n, where X is sulfur, selenium, or tellurium, R.sup.1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R.sup.2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.

A rapid, centrifugal method to prepare polysilazanes and separate them from their ammonium halide-anhydrous, liquid ammonia by-product is coupled with several, alternative methods to recover ammonium halide and anhydrous, liquid ammonia from the by-product. Some reactive modes of by-product recovery lead to sodium chloride as the sole waste product or, optionally, to ammonia borane as a secondary product of the process.