A device for rapidly preparing β-Si3N4 by gas-solid reaction and a method thereof, and relates to the technical field of recycling and reuse of waste fine silicon powder. The bottom of a stock bin communicates with a first opening and closing passage, a first connection passage, and the top of a first transitional bin; the bottom of the first transitional bin communicates with the first opening and closing passage, a second connection passage, and the top of a reaction bin; the bottom of the reaction bin communicates with a second opening and closing passage, the first connection passage, and the top of a second transitional bin; the bottom of the second transitional bin communicates with the top of a conveying passage through the first opening and closing passage; a material outlet of the conveying bin communicates with the collection bin.

A silicon nitride powder for sintering which, despite of its fine powdery form, shows a very small increase in the oxygen concentration with time and features excellent storage stability. The silicon nitride powder for sintering has a specific surface area of 5 to 30 m.sup.2/g, and is characterized by having a hydrophobicity (M value) of 30 or more and an increase in the oxygen concentration of 0.30% by mass or less after left to stand in the air of a humidity of 90% and 20° C. for 48 hours. The silicon nitride powder for sintering can be obtained by dry-pulverizing aggregated masses of the silicon nitride in an inert atmosphere in the presence of a silane coupling agent.

A method of making Si.sub.3N.sub.4 nanotubes and nanorods comprising adding agricultural husk material powder to a container, wherein the container is a covered boron nitride crucible, creating an inert atmosphere of nitrogen inside the container, applying heat, heating the agricultural husk material, and reacting the agricultural husk material and forming silicon nitride, wherein the silicon nitride is nanotubes and nanorods.

Disclosed herein are compositions, devices and methods for inactivating viruses, bacteria, and fungi. The compositions, methods, and devices may include coatings or slurries such as silicon nitride powder coatings or slurries for the inactivation of viruses, bacteria, and/or fungi.

Disclosed herein are compositions, devices and methods for inactivating viruses, bacteria, and fungi. The compositions, methods, and devices may include coatings or slurries such as silicon nitride powder coatings or slurries for the inactivation of viruses, bacteria, and/or fungi.

A nitride semiconductor device includes a substrate; a nitride semiconductor multilayer structure which is formed on the substrate, includes a first nitride semiconductor layer and a second nitride semiconductor layer having a different composition from that of the first nitride semiconductor layer, and generates two dimensional electron gas on a hetero interface between the first nitride semiconductor layer and the second nitride semiconductor layer; and an insulating film which covers at least a portion of a surface of the nitride semiconductor multilayer structure, has a concentration of Si—H bonds equal to or less than 6.0×10.sup.21 cm.sup.−3, and is formed of silicon nitride.

Disclosed are amino(iodo)silane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed amino(iodo)silane precursors include SiH.sub.2I(N(iPr).sub.2) or SiH.sub.2I(N(iBu).sub.2).

Disclosed are amino(iodo)silane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed amino(iodo)silane precursors include SiH.sub.2I(N(iPr).sub.2) or SiH.sub.2I(N(iBu).sub.2).

A process of producing silicon-containing materials includes converting a gas to a superheated state in which it is at least partly in plasma form, and contacting the superheated gas with a silicon-containing first starting material to form a mixture including the gas and silicon, wherein the silicon-containing materials are produced by adding to the gas or the mixture a second starting material that can enter into a chemical reaction directly with the silicon in the mixture, or breaks down thermally on contact with the superheated gas and/or the mixture, and steps a. and b. are effected spatially separately from one another.

Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): ##STR00001##
in which R is a substituted or unsubstituted organic group and R′ is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.