Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): ##STR00001##
in which R is a substituted or unsubstituted organic group and R′ is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): ##STR00001##
in which R is a substituted or unsubstituted organic group and R′ is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

A device for rapidly preparing β-Si3N4 by gas-solid reaction and a method thereof, and relates to the technical field of recycling and reuse of waste fine silicon powder. The bottom of a stock bin communicates with a first opening and closing passage, a first connection passage, and the top of a first transitional bin; the bottom of the first transitional bin communicates with the first opening and closing passage, a second connection passage, and the top of a reaction bin; the bottom of the reaction bin communicates with a second opening and closing passage, the first connection passage, and the top of a second transitional bin; the bottom of the second transitional bin communicates with the top of a conveying passage through the first opening and closing passage; a material outlet of the conveying bin communicates with the collection bin.

Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

Provided are a method for producing a ceramic sintered body having improved light emission intensity, a ceramic sintered body, and a light emitting device. The method for producing a ceramic sintered body comprises preparing a molded body that contains a nitride fluorescent material having a composition containing: at least one alkaline earth metal element M.sup.1 selected from the group consisting of Ba, Sr, Ca, and Mg; at least one metal element M.sup.2 selected from the group consisting of Eu, Ce, Tb, and Mn; Si; and N, wherein a total molar ratio of the alkaline earth metal element M.sup.1 and the metal element M.sup.2 in 1 mol of the composition is 2, a molar ratio of the metal element M.sup.2 is a product of 2 and a parameter y and wherein y is in a range of 0.001 or more and less than 0.5, a molar ratio of Si is 5, and a molar ratio of N is 8, and wherein the nitride fluorescent material has a crystallite size, as calculated by X-ray diffraction measurement using the Halder-Wagner method, of 550 Å or less, and calcining the molded body at a temperature in a range of 1,600° C. or more and 2,200° C. or less to obtain a sintered body.

Described herein are antipathogenic compositions comprising a nitride chosen from aluminum nitride, boron nitride, chromium nitride, cerium nitride, hafnium nitride, lanthanum nitride, phosphorous nitride, sulfur nitride, tantalum nitride, titanium nitride, vanadium nitride, yttrium nitride, zirconium nitride, silicon nitride, or combinations thereof, and methods of using said compositions to inactivate viruses, bacteria, and/or fungi.

A silicon chalcogenate precursor comprising the chemical formula of Si(XR.sup.1).sub.nR.sup.2.sub.4-n, where X is sulfur, selenium, or tellurium, R.sup.1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R.sup.2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.

A silicon chalcogenate precursor comprising the chemical formula of Si(XR.sup.1).sub.nR.sup.2.sub.4-n, where X is sulfur, selenium, or tellurium, R.sup.1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R.sup.2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.

A system for chemical transformation of 3D state materials is disclosed wherein, a reaction group having a main body arranged to shape a reaction chamber in which a component configured to support a sample of 3D state arranged to be chemically transform is expected. The system further includes an oven arranged to heat the reaction chamber and a GAS supply group arranged to release a first gas in the reaction chamber and/or a casing component, inside the main body, which has a chemical agent suitable for releasing a second gas into the reaction chamber. The main body has at least two turbines arranged to converge into the reaction chamber, the first and/or the second gas on the samples. The invention relates also to a method for chemical transformation of 3D state materials.