C01B21/072

GLASS-COATED ALUMINUM NITRIDE PARTICLES, METHOD FOR PRODUCING SAME, AND HEAT DISSIPATING RESIN COMPOSITION CONTAINING SAME
20200339419 · 2020-10-29 · ·

Glass-coated aluminum nitride particles and a method for producing the same. The glass-coated aluminum nitride particles include aluminum nitride particles and a glass phase which covers at least a part of the surface of each aluminum nitride particle. The glass phase is a composition which contains at least a glass component; and the proportion of the composition containing a glass component is 0.2 parts by weight to 5.0 parts by weight with respect to 100 parts by weight of the aluminum nitride particles. The composition containing the glass component further contains boron nitride particle; and the aluminum nitride particles have a volume cumulative d50 of from 10 m to 200 m.

High temperature tubular heaters

A heater assembly includes a heating member, a mounting member that mounts the heating member to a wall of an external component, and an insulator disposed between the heating member and the wall. The insulator electrically insulates the heating member from the wall and blocks a ground path from the heating member to the wall of the external component.

High temperature tubular heaters

A heater assembly includes a heating member, a mounting member that mounts the heating member to a wall of an external component, and an insulator disposed between the heating member and the wall. The insulator electrically insulates the heating member from the wall and blocks a ground path from the heating member to the wall of the external component.

Piezoelectric layer and piezoelectric device comprising the piezoelectric layer

A piezoelectric material is described. The piezoelectric material comprises aluminum nitride (AlN) doped with ytterbium (Yb), an atomic percentage of Yb in the AlN being greater than or equal to approximately 10.0% and less than or equal to approximately 27.0%. Piezoelectric layers comprising the piezoelectric material may be used in bulk acoustic wave (BAW) acoustic resonators, and surface acoustic wave (SAW) acoustic resonators. The BAW acoustic resonators and SAW acoustic resonators can be used in a variety of applications.

Piezoelectric layer and piezoelectric device comprising the piezoelectric layer

A piezoelectric material is described. The piezoelectric material comprises aluminum nitride (AlN) doped with ytterbium (Yb), an atomic percentage of Yb in the AlN being greater than or equal to approximately 10.0% and less than or equal to approximately 27.0%. Piezoelectric layers comprising the piezoelectric material may be used in bulk acoustic wave (BAW) acoustic resonators, and surface acoustic wave (SAW) acoustic resonators. The BAW acoustic resonators and SAW acoustic resonators can be used in a variety of applications.

Cleaning method and laminate of aluminum nitride single-crystal substrate
10753011 · 2020-08-25 · ·

A method for effectively removing minute impurities of 1 m or less in size that are present on a surface of an aluminum nitride single-crystal substrate without etching the surface includes scrubbing a surface of an aluminum nitride single-crystal substrate using a polymer compound material having lower hardness than an aluminum nitride single crystal, and an alkali aqueous solution having 0.01-1 mass % concentration of potassium hydroxide or sodium hydroxide, the alkali aqueous solution being absorbed in the polymer compound material.

Process for controlling structure and/or properties of carbon and boron nanomaterials

Processes for altering the structure and/or properties of carbon nanomaterials and inorganic nanomaterials, such as boron nitride nanotubes are described. The processes can be used to produce a carbon nanotube product comprising predominantly carbon nanotube (CNTs) having a desired average length. The processes can also be used to fabricate carbon nanodots. The processes can also be used to slice inorganic nanotubes or nanowires. The processes can also be used to form supramolecular fullerene assemblies.

Method of Making Aluminum Nitride Foam
20200239312 · 2020-07-30 ·

Porous aluminum nitride (AlN) provides a greater surface area and higher permeability, which is especially desirable for advanced functional application. Porous or bulk aluminum nitride is very difficult to manufacture due mainly to its high melting point (e.g., 2200 degrees Celsius). A new processing method synthesizes porous aluminum nitride through a complete transformation from porous aluminum using a remarkably low nitriding or sintering temperature. The manufactured porous aluminum nitride foam can be used for such applications as filters, separators, heat sinks, ballistic armor, electronic packaging, light- and field-emission devices, and highly wear-resistant composites when infiltrated with metal such as aluminum, titanium, or copper.

SILICON-CONTAINING ALUMINUM NITRIDE PARTICLES, METHOD FOR PRODUCING SAME, AND LIGHT EMITTING DEVICE
20200198968 · 2020-06-25 · ·

Provided are silicon-containing aluminum nitride particles having a high reflectance, a method for producing the same, and a light emitting device. In certain embodiment, silicon-containing aluminum nitride particles having a total amount of aluminum and nitrogen of 90% by mass or more, a content of silicon in a range of 1.5% by mass or more and 4.0% by mass or less, and a content of oxygen in a range of 0.5% by mass or more and 2.0% by mass or less, and having an average reflectance in a wavelength range of 380 nm or more and 730 nm or less of 85% or more.

SILICON-CONTAINING ALUMINUM NITRIDE PARTICLES, METHOD FOR PRODUCING SAME, AND LIGHT EMITTING DEVICE
20200198968 · 2020-06-25 · ·

Provided are silicon-containing aluminum nitride particles having a high reflectance, a method for producing the same, and a light emitting device. In certain embodiment, silicon-containing aluminum nitride particles having a total amount of aluminum and nitrogen of 90% by mass or more, a content of silicon in a range of 1.5% by mass or more and 4.0% by mass or less, and a content of oxygen in a range of 0.5% by mass or more and 2.0% by mass or less, and having an average reflectance in a wavelength range of 380 nm or more and 730 nm or less of 85% or more.